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MGSF2P02HDT3G-VB Product details
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MGSF2P02HDT3G-VB Product Introduction
The MGSF2P02HDT3G-VB is a high-efficiency single P-Channel MOSFET in a SOT23-6 package designed for low-voltage applications. This device has a rated drain-to-source voltage (VDS) of -30V and a maximum gate-source voltage (VGS) of ±20V. With its low on-resistance and good switching characteristics, the MGSF2P02HDT3G-VB is able to excel in high-efficiency and high-frequency operation. Its advanced Trench technology ensures that this MOSFET has superior performance in a variety of power management and control applications.
The MGSF2P02HDT3G-VB is a high-efficiency single P-Channel MOSFET in a SOT23-6 package designed for low-voltage applications. This device has a rated drain-to-source voltage (VDS) of -30V and a maximum gate-source voltage (VGS) of ±20V. With its low on-resistance and good switching characteristics, the MGSF2P02HDT3G-VB is able to excel in high-efficiency and high-frequency operation. Its advanced Trench technology ensures that this MOSFET has superior performance in a variety of power management and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Model**: MGSF2P02HDT3G-VB
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain to Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -4.8A
- **Technology**: Trench
- **Model**: MGSF2P02HDT3G-VB
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain to Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -4.8A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
MGSF2P02HDT3G-VB MOSFET is widely used in many fields and modules, including:
1. **Power Management**: The low on-resistance of this MOSFET makes it an ideal choice for switching power supplies and DC-DC converters, which can significantly improve energy conversion efficiency and reduce system power consumption and heat.
2. **Motor Drive**: MGSF2P02HDT3G-VB is suitable for small DC motor control and is widely used in electric toys, home appliances and automation equipment, providing fast response and high-efficiency motor drive.
3. **LED Drive**: In LED lighting systems, MGSF2P02HDT3G-VB can provide stable current, suitable for high-power LED modules, ensuring uniform lighting effects and excellent energy efficiency, suitable for commercial and home lighting applications.
4. **Battery Management System**: This MOSFET can be used for battery charge and discharge management, suitable for battery management of portable electronic devices and electric vehicles, and can monitor and control batteries under safe and efficient conditions.
5. **Automotive Electronics**: In modern automotive electronic systems, MGSF2P02HDT3G-VB can be used for power switching and load control to meet the needs of high-performance electronic components and improve the reliability and safety of automotive systems.
In summary, MGSF2P02HDT3G-VB MOSFET has demonstrated excellent performance and wide applicability in multiple application fields, providing important support for high-performance and high-reliability electronic devices.
MGSF2P02HDT3G-VB MOSFET is widely used in many fields and modules, including:
1. **Power Management**: The low on-resistance of this MOSFET makes it an ideal choice for switching power supplies and DC-DC converters, which can significantly improve energy conversion efficiency and reduce system power consumption and heat.
2. **Motor Drive**: MGSF2P02HDT3G-VB is suitable for small DC motor control and is widely used in electric toys, home appliances and automation equipment, providing fast response and high-efficiency motor drive.
3. **LED Drive**: In LED lighting systems, MGSF2P02HDT3G-VB can provide stable current, suitable for high-power LED modules, ensuring uniform lighting effects and excellent energy efficiency, suitable for commercial and home lighting applications.
4. **Battery Management System**: This MOSFET can be used for battery charge and discharge management, suitable for battery management of portable electronic devices and electric vehicles, and can monitor and control batteries under safe and efficient conditions.
5. **Automotive Electronics**: In modern automotive electronic systems, MGSF2P02HDT3G-VB can be used for power switching and load control to meet the needs of high-performance electronic components and improve the reliability and safety of automotive systems.
In summary, MGSF2P02HDT3G-VB MOSFET has demonstrated excellent performance and wide applicability in multiple application fields, providing important support for high-performance and high-reliability electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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