MECP01-VB Product details
Product introduction:
MECP01-VB is a high-performance single N-channel MOSFET in a TO252 package, designed for applications requiring high current and high voltage. The device has a maximum drain-source voltage (VDS) of 60V and supports a gate-source voltage (VGS) range of ±20V, making it suitable for a wide range of power management and switching applications. Its turn-on threshold voltage (Vth) is 1.7V, and its on-resistance (RDS(ON)) is 85mΩ at VGS=4.5V, which drops to 73mΩ at VGS=10V, making this MOSFET perform well when the maximum drain current can reach 18A. MECP01-VB uses Trench technology, and its low on-resistance and high switching speed make it an ideal choice for high-efficiency power modules and drive circuits.
2. MECP01-VB
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter name Value unit Description
Package type TO252 - Suitable for surface mount package, easy for automated production
Channel configuration Single N-channel - Provides a single N-channel configuration, suitable for a variety of power management applications
Maximum drain-source voltage (VDS) 60 V Maximum tolerable drain-source voltage
Maximum gate-source voltage (VGS) ±20 V Gate-source voltage limit range
Threshold voltage (Vth) 1.7 V Minimum gate voltage to start conduction
On-resistance (RDS(ON)) 85 mΩ On-resistance when VGS=4.5V
On-resistance (RDS(ON)) 73 mΩ On-resistance when VGS=10V
Maximum continuous current (ID) 18 A Maximum continuous drain current, suitable for medium power load applications
Technology type Trench - Trench technology, providing low loss and high switching speed
Operating temperature range -55 ~ 150 ℃ Wide operating temperature range, suitable for various environmental conditions
Installation method Surface mount - suitable for modern circuit board design, saving space
Three,
Domain and module applications:
Power Management System
MECP01-VB can be used in power management systems, especially in switching power supplies and DC-DC converters, to provide efficient power control and current switching functions to ensure the stability and reliability of the power system.
Battery Charger
This MOSFET is widely used in battery chargers, which can efficiently control the charging process and is suitable for fast charging of mobile phones, tablets and other portable devices.
Power Tools
MECP01-VB is also suitable for power tools. Its high current capability and low on-resistance ensure high efficiency and long-lasting operation of the tools. It is suitable for various motor drive and switching applications.
LED Lighting System
This device is suitable for LED lighting systems. It can effectively control the switching of LEDs and provide efficient power output. It is widely used in commercial and home lighting.
Industrial Automation Equipment
MECP01-VB is also suitable for industrial automation equipment. It can be used for motor drive, sensor control and various other high-efficiency power applications to help improve the performance and energy efficiency of equipment.
Technical support:
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