Product introduction：
1. MEBSS138-VB Product Introduction: MEBSS138-VB is a high-efficiency **single N-channel MOSFET**, packaged in **SOT23-3**, designed for switching and amplification applications in small electronic devices. Its maximum drain-source voltage (V_DS) is **60V**, enabling it to operate stably in high-voltage environments. The turn-on voltage (V_th) is **1.7V**, ensuring fast turn-on at a lower gate voltage. The maximum continuous drain current (I_D) of MEBSS138-VB is **0.3A**, and the on-resistance (R_DS(ON)) is **3100mΩ** and **2800mΩ** at gate voltages of **4.5V** and **10V**, respectively. Although relatively high, it still provides acceptable performance for low-power applications. This MOSFET uses **trench technology**, which improves the switching speed of the device and reduces power consumption, making it suitable for various low-power and small circuit designs.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
2. MEBSS138-VB MOSFET Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|------------------------------------------|
| **Package Type** | SOT23-3 | Compact package, suitable for electronic devices with limited space|
| **MOSFET Type** | Single N-Channel | Suitable for forward current controlled applications|
| **Drain-Source Voltage (V_DS)** | 60V | Maximum drain-source voltage, suitable for high voltage applications|
| **Gate-Source Voltage (V_GS)** | ±20V | Gate voltage range to ensure flexible control capability|
| **Turning On Voltage (V_th)** | 1.7V | Gate-Source Voltage starts to conduct when this value is reached|
| **On-Resistance (R_DS(ON))** | 3100mΩ @ V_GS=4.5V | On-resistance at 4.5V gate voltage|
| **On-resistance (R_DS(ON))** | 2800mΩ @ V_GS=10V | On-resistance at 10V gate voltage|
| **Maximum drain current (I_D)** | 0.3A | Maximum drain current that can be carried|
| **Technology** | Trench | Using trench technology to improve performance and reduce conduction losses|
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Domain and module applications：
III. Application fields and module examples of MEBSS138-VB
1. **Low-power switch**
MEBSS138-VB is suitable for various low-power switch applications, and can effectively control the on and off of loads such as small motors, fans and LEDs. Due to its low on-voltage, it is suitable for use in battery-powered devices.
2. **Power management**
In power management modules, this MOSFET can be used in DC-DC converters and power distribution to ensure stable current transmission and optimize power efficiency, suitable for mobile devices and consumer electronics.
3. **Signal amplification**
Due to its moderate power and on-resistance, MEBSS138-VB can be used in applications such as audio amplifiers and signal modems to provide high-quality signal amplification and transmission.
4. **Automation equipment**
The device is also very suitable for automation and control systems, such as sensor and actuator control. It can respond quickly to control signals to ensure efficient and stable operation of the system.
5. **Communication equipment**
In communication modules, MEBSS138-VB can be used as a switching element to control the transmission of signals and ensure efficient data exchange, which is suitable for wireless communication and network equipment.
Through its excellent performance and wide range of applications, MEBSS138-VB has become an ideal choice for various electronic products and modules, meeting the needs of modern design for miniaturization and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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