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ME93N03-VB Product details
Back to previous pageProduct introduction：
1. **ME93N03-VB Product Introduction**
ME93N03-VB is a high-performance **single N-channel MOSFET**, packaged in **TO252**, designed for power management and high current applications. Its maximum drain-source voltage (VDS) is **30V**, suitable for operation in a variety of voltage environments. The **threshold voltage (Vth) of the device is **1.7V**, which enables it to turn on quickly at a lower gate voltage and has excellent dynamic response. The **on-resistance (RDS(ON))** of ME93N03-VB is **3mΩ** at VGS=4.5V and **2mΩ** at VGS=10V, indicating its extremely low conduction loss, thereby improving the efficiency of power transmission. The **maximum drain current (ID) of this MOSFET is **120A**, and it uses **Trench technology** to ensure heat dissipation performance and current handling capabilities under high load conditions, making it the preferred choice for efficient power solutions.
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ME93N03-VB is a high-performance **single N-channel MOSFET**, packaged in **TO252**, designed for power management and high current applications. Its maximum drain-source voltage (VDS) is **30V**, suitable for operation in a variety of voltage environments. The **threshold voltage (Vth) of the device is **1.7V**, which enables it to turn on quickly at a lower gate voltage and has excellent dynamic response. The **on-resistance (RDS(ON))** of ME93N03-VB is **3mΩ** at VGS=4.5V and **2mΩ** at VGS=10V, indicating its extremely low conduction loss, thereby improving the efficiency of power transmission. The **maximum drain current (ID) of this MOSFET is **120A**, and it uses **Trench technology** to ensure heat dissipation performance and current handling capabilities under high load conditions, making it the preferred choice for efficient power solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. **Detailed parameter description**
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 30 | V | Maximum withstand drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate voltage operating range|
| Threshold voltage| Vth | 1.7 | V | Minimum voltage for MOSFET turn-on|
| On-resistance (4.5V) | RDS(ON) | 3 | mΩ | On-resistance at VGS=4.5V|
| On-resistance (10V) | RDS(ON) | 2 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 120 | A | Continuous drain current|
| Package type| - | TO252 | - | Package suitable for through-hole insertion|
| Technology type| - | Trench | - | Trench technology for low conduction losses|
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| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 30 | V | Maximum withstand drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate voltage operating range|
| Threshold voltage| Vth | 1.7 | V | Minimum voltage for MOSFET turn-on|
| On-resistance (4.5V) | RDS(ON) | 3 | mΩ | On-resistance at VGS=4.5V|
| On-resistance (10V) | RDS(ON) | 2 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 120 | A | Continuous drain current|
| Package type| - | TO252 | - | Package suitable for through-hole insertion|
| Technology type| - | Trench | - | Trench technology for low conduction losses|
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Domain and module applications：
3. **Application fields and module examples**
1. **Power management**
- ME93N03-VB performs well in **switching power supplies** and **DC-DC converters**, and can effectively manage the current in the power conversion process and improve the conversion efficiency. Its low on-resistance ensures lower power consumption in high-frequency switching environments, making it very suitable for power adapters and power modules.
2. **Load drive**
- This MOSFET is particularly suitable for **motor drive** and **LED drive** applications, and can provide continuous currents up to **120A**, ensuring efficient driving of high-power loads. It is widely used in power tools, fans and lighting equipment.
3. **Consumer electronics**
- In **smartphones, tablets** and **laptops**, ME93N03-VB can be used for battery management and charging circuits, providing fast and reliable switching functions, optimizing the battery charging and discharging process, and extending the service life of the device.
4. **Automotive electronics**
- In **Automotive power management** systems, ME93N03-VB is suitable for **Power doors, seat adjustment** and **Onboard charging** applications, ensuring precise control of current while improving the overall efficiency and safety of automotive systems.
5. **Industrial control**
- In **Industrial automation**, the device is suitable for **Electrical drive, sensor power supply** and **Control system**, ensuring stable performance and efficient energy management under high loads, meeting the stringent requirements of industrial applications.
With its excellent electrical characteristics and reliable performance, ME93N03-VB has become an ideal choice for multiple fields such as power management, load drive and automotive electronics, ensuring that various applications operate in an efficient and stable environment.
1. **Power management**
- ME93N03-VB performs well in **switching power supplies** and **DC-DC converters**, and can effectively manage the current in the power conversion process and improve the conversion efficiency. Its low on-resistance ensures lower power consumption in high-frequency switching environments, making it very suitable for power adapters and power modules.
2. **Load drive**
- This MOSFET is particularly suitable for **motor drive** and **LED drive** applications, and can provide continuous currents up to **120A**, ensuring efficient driving of high-power loads. It is widely used in power tools, fans and lighting equipment.
3. **Consumer electronics**
- In **smartphones, tablets** and **laptops**, ME93N03-VB can be used for battery management and charging circuits, providing fast and reliable switching functions, optimizing the battery charging and discharging process, and extending the service life of the device.
4. **Automotive electronics**
- In **Automotive power management** systems, ME93N03-VB is suitable for **Power doors, seat adjustment** and **Onboard charging** applications, ensuring precise control of current while improving the overall efficiency and safety of automotive systems.
5. **Industrial control**
- In **Industrial automation**, the device is suitable for **Electrical drive, sensor power supply** and **Control system**, ensuring stable performance and efficient energy management under high loads, meeting the stringent requirements of industrial applications.
With its excellent electrical characteristics and reliable performance, ME93N03-VB has become an ideal choice for multiple fields such as power management, load drive and automotive electronics, ensuring that various applications operate in an efficient and stable environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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