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ME85N03-VB Product details
Back to previous pageProduct introduction：
1. ME85N03-VB Product Introduction
ME85N03-VB is a high-performance **N-channel MOSFET**, using **TO252 package**, designed for applications requiring low voltage and high current. The product has a drain-source voltage (VDS) rating of 30V and a gate-source voltage (VGS) range of ±20V, which can adapt to a variety of power management and drive circuits. The threshold voltage (Vth) of ME85N03-VB is 1.7V, ensuring that it can achieve fast switching at a relatively low gate voltage. Its on-resistance (RDS(ON)) is 2mΩ at VGS=10V and 3mΩ at VGS=4.5V, supporting a drain current (ID) of up to 120A. This MOSFET uses **trench (Trench) technology**, with extremely low switching losses and superior thermal performance, and is an ideal choice for modern power electronics design.
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ME85N03-VB is a high-performance **N-channel MOSFET**, using **TO252 package**, designed for applications requiring low voltage and high current. The product has a drain-source voltage (VDS) rating of 30V and a gate-source voltage (VGS) range of ±20V, which can adapt to a variety of power management and drive circuits. The threshold voltage (Vth) of ME85N03-VB is 1.7V, ensuring that it can achieve fast switching at a relatively low gate voltage. Its on-resistance (RDS(ON)) is 2mΩ at VGS=10V and 3mΩ at VGS=4.5V, supporting a drain current (ID) of up to 120A. This MOSFET uses **trench (Trench) technology**, with extremely low switching losses and superior thermal performance, and is an ideal choice for modern power electronics design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. ME85N03-VB Detailed Parameters
| **Parameter** | **Specification** | **Description** |
|-------------------------|-----------------------------------|----------------------------------------------------|
| **Package** | TO252 | Suitable for high-power applications, easy heat dissipation and installation|
| **Channel Configuration** | Single-N-Channel | Single N-channel structure, suitable for a variety of switching and amplification applications|
| **VDS (Drain-Source Voltage)** | 30V | Ideal for medium voltage applications|
| **VGS (Gate-Source Voltage)** | ±20V | Wide gate drive voltage range, suitable for different control circuits|
| **Vth (Threshold Voltage)** | 1.7V | Moderate threshold voltage to ensure efficient switching|
| **RDS(ON)@VGS=4.5V** | 3mΩ | Low on-resistance, helps reduce switching losses|
| **RDS(ON)@VGS=10V** | 2mΩ | Very low on-resistance, supports high current applications|
| **ID (drain current)** | 120A | High current handling capability, suitable for a variety of power management and drive circuits|
| **Technology** | Trench | Trench technology ensures high efficiency and good thermal performance|
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| **Parameter** | **Specification** | **Description** |
|-------------------------|-----------------------------------|----------------------------------------------------|
| **Package** | TO252 | Suitable for high-power applications, easy heat dissipation and installation|
| **Channel Configuration** | Single-N-Channel | Single N-channel structure, suitable for a variety of switching and amplification applications|
| **VDS (Drain-Source Voltage)** | 30V | Ideal for medium voltage applications|
| **VGS (Gate-Source Voltage)** | ±20V | Wide gate drive voltage range, suitable for different control circuits|
| **Vth (Threshold Voltage)** | 1.7V | Moderate threshold voltage to ensure efficient switching|
| **RDS(ON)@VGS=4.5V** | 3mΩ | Low on-resistance, helps reduce switching losses|
| **RDS(ON)@VGS=10V** | 2mΩ | Very low on-resistance, supports high current applications|
| **ID (drain current)** | 120A | High current handling capability, suitable for a variety of power management and drive circuits|
| **Technology** | Trench | Trench technology ensures high efficiency and good thermal performance|
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Domain and module applications：
III. Application fields and module examples of ME85N03-VB
1. **Power management system**
- ME85N03-VB is widely used in **switching power supplies** and **DC-DC converters**. Its 30V drain-source voltage and current capability of up to 120A make it an ideal choice for efficient power management and suitable for various portable devices, home appliances and industrial power supplies.
2. **Electric vehicles**
- This MOSFET is a key component in **electric vehicles** and **hybrid electric vehicles** applications, suitable for motor control and battery management systems. The efficient switching performance of ME85N03-VB can significantly improve the efficiency of the power system of electric vehicles and ensure its stability and reliability during driving.
3. **Industrial control**
- In **industrial automation** equipment, ME85N03-VB can be used as a power switch to drive various sensors and actuators. Its ultra-low on-resistance and high current capability improve the response speed and energy efficiency of the equipment, and adapt to a variety of industrial environments.
4. **Consumer electronics**
- This MOSFET can be widely used in **consumer electronics** products, such as **TVs, audio systems** and **computer power supplies**. The high-performance characteristics of ME85N03-VB enable high efficiency and low power consumption in these devices, thereby improving overall performance and user experience.
5. **LED driver**
- ME85N03-VB is equally important in **LED lighting control**. As a switching element, it can effectively drive LED lamps, provide higher brightness and better dimming effects, and its low power consumption characteristics extend the service life of LEDs.
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**Summary**: ME85N03-VB is a high-efficiency **N-channel MOSFET**. With its low on-resistance of 2mΩ, high current capability of 120A and TO252 package, it is suitable for **power management, electric vehicles, industrial control, consumer electronics** and **LED driver** and other fields, showing excellent performance and wide application potential.
1. **Power management system**
- ME85N03-VB is widely used in **switching power supplies** and **DC-DC converters**. Its 30V drain-source voltage and current capability of up to 120A make it an ideal choice for efficient power management and suitable for various portable devices, home appliances and industrial power supplies.
2. **Electric vehicles**
- This MOSFET is a key component in **electric vehicles** and **hybrid electric vehicles** applications, suitable for motor control and battery management systems. The efficient switching performance of ME85N03-VB can significantly improve the efficiency of the power system of electric vehicles and ensure its stability and reliability during driving.
3. **Industrial control**
- In **industrial automation** equipment, ME85N03-VB can be used as a power switch to drive various sensors and actuators. Its ultra-low on-resistance and high current capability improve the response speed and energy efficiency of the equipment, and adapt to a variety of industrial environments.
4. **Consumer electronics**
- This MOSFET can be widely used in **consumer electronics** products, such as **TVs, audio systems** and **computer power supplies**. The high-performance characteristics of ME85N03-VB enable high efficiency and low power consumption in these devices, thereby improving overall performance and user experience.
5. **LED driver**
- ME85N03-VB is equally important in **LED lighting control**. As a switching element, it can effectively drive LED lamps, provide higher brightness and better dimming effects, and its low power consumption characteristics extend the service life of LEDs.
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**Summary**: ME85N03-VB is a high-efficiency **N-channel MOSFET**. With its low on-resistance of 2mΩ, high current capability of 120A and TO252 package, it is suitable for **power management, electric vehicles, industrial control, consumer electronics** and **LED driver** and other fields, showing excellent performance and wide application potential.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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