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ME76N03-VB Product details
Back to previous pageProduct introduction：
1. ME76N03-VB Product Introduction
ME76N03-VB is a high-performance **single N-channel MOSFET**, packaged in **TO252**, designed for demanding high-current applications. The device has a drain-source voltage (V_DS) of up to **30V** and a gate-source voltage (V_GS) of **±20V**, making it suitable for a variety of electrical environments. Its turn-on voltage (V_th) is **1.7V**, which facilitates fast conduction at low voltage. The maximum continuous drain current (I_D) of ME76N03-VB can reach **100A**. At **4.5V** and **10V** gate voltages, the on-resistance (R_DS(ON)) is **3mΩ** and **2mΩ**, respectively, showing excellent conduction performance and low power consumption. Using **trench technology**, this MOSFET not only improves switching speed, but also reduces energy loss, making it very suitable for high-efficiency power management.
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ME76N03-VB is a high-performance **single N-channel MOSFET**, packaged in **TO252**, designed for demanding high-current applications. The device has a drain-source voltage (V_DS) of up to **30V** and a gate-source voltage (V_GS) of **±20V**, making it suitable for a variety of electrical environments. Its turn-on voltage (V_th) is **1.7V**, which facilitates fast conduction at low voltage. The maximum continuous drain current (I_D) of ME76N03-VB can reach **100A**. At **4.5V** and **10V** gate voltages, the on-resistance (R_DS(ON)) is **3mΩ** and **2mΩ**, respectively, showing excellent conduction performance and low power consumption. Using **trench technology**, this MOSFET not only improves switching speed, but also reduces energy loss, making it very suitable for high-efficiency power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. ME76N03-VB MOSFET Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|------------------------------------------|
| **Package type** | TO252 | Compact package suitable for high power applications|
| **MOSFET type** | Single N-Channel | Unidirectional current control, suitable for a variety of circuits|
| **Drain-source voltage (V_DS)** | 30V | Maximum drain-source voltage, suitable for high voltage power supply|
| **Gate-source voltage (V_GS)** | ±20V | Gate voltage range, providing good switching performance|
| **Turning voltage (V_th)** | 1.7V | Starts to conduct when the gate-source voltage reaches this value|
| **On-resistance (R_DS(ON))** | 3mΩ @ V_GS=4.5V | On-resistance at 4.5V gate voltage|
| **On-resistance (R_DS(ON))** | 2mΩ @ V_GS=10V | On-resistance at 10V gate voltage|
| **Maximum drain current (I_D)** | 100A | Maximum drain current that can be carried|
| **Technology** | Trench | Using trench technology to improve performance and reduce conduction losses|
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| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|------------------------------------------|
| **Package type** | TO252 | Compact package suitable for high power applications|
| **MOSFET type** | Single N-Channel | Unidirectional current control, suitable for a variety of circuits|
| **Drain-source voltage (V_DS)** | 30V | Maximum drain-source voltage, suitable for high voltage power supply|
| **Gate-source voltage (V_GS)** | ±20V | Gate voltage range, providing good switching performance|
| **Turning voltage (V_th)** | 1.7V | Starts to conduct when the gate-source voltage reaches this value|
| **On-resistance (R_DS(ON))** | 3mΩ @ V_GS=4.5V | On-resistance at 4.5V gate voltage|
| **On-resistance (R_DS(ON))** | 2mΩ @ V_GS=10V | On-resistance at 10V gate voltage|
| **Maximum drain current (I_D)** | 100A | Maximum drain current that can be carried|
| **Technology** | Trench | Using trench technology to improve performance and reduce conduction losses|
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Domain and module applications：
III. Application fields and module examples of ME76N03-VB
1. **Switching Power Supply (SMPS)**
ME76N03-VB is suitable for efficient switching power supplies (such as AC-DC and DC-DC converters). Its low on-resistance and high current capability can significantly improve the conversion efficiency of the system and reduce energy loss.
2. **Motor Drive**
In motor control applications, this MOSFET can be used as a motor drive module, suitable for various power tools and home appliances, capable of achieving efficient and reliable motor control, providing smooth start-up and operation.
3. **Power Management System**
ME76N03-VB can be used as a load switch in power management solutions, supporting fast power switching and efficient current control, improving system stability and reliability, and is suitable for battery management systems and chargers.
4. **LED Drive**
This MOSFET is very suitable for LED drivers, can effectively control current, ensure the stability and brightness of LEDs, and is widely used in LED lighting and display drivers.
5. **Automotive Electronics**
ME76N03-VB is widely used in automotive electronics, especially in power distribution and control modules. With its high reliability and high voltage resistance, it is suitable for on-board chargers and battery management systems.
Through its excellent performance and wide range of applications, ME76N03-VB has become an ideal choice for applications such as efficient power management and motor control, meeting the needs of modern electronic products for high performance and low power consumption.
1. **Switching Power Supply (SMPS)**
ME76N03-VB is suitable for efficient switching power supplies (such as AC-DC and DC-DC converters). Its low on-resistance and high current capability can significantly improve the conversion efficiency of the system and reduce energy loss.
2. **Motor Drive**
In motor control applications, this MOSFET can be used as a motor drive module, suitable for various power tools and home appliances, capable of achieving efficient and reliable motor control, providing smooth start-up and operation.
3. **Power Management System**
ME76N03-VB can be used as a load switch in power management solutions, supporting fast power switching and efficient current control, improving system stability and reliability, and is suitable for battery management systems and chargers.
4. **LED Drive**
This MOSFET is very suitable for LED drivers, can effectively control current, ensure the stability and brightness of LEDs, and is widely used in LED lighting and display drivers.
5. **Automotive Electronics**
ME76N03-VB is widely used in automotive electronics, especially in power distribution and control modules. With its high reliability and high voltage resistance, it is suitable for on-board chargers and battery management systems.
Through its excellent performance and wide range of applications, ME76N03-VB has become an ideal choice for applications such as efficient power management and motor control, meeting the needs of modern electronic products for high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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