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ME7636-G-VB Product details

Product introduction:

ME7636-G-VB Product Introduction

ME7636-G-VB is a high-performance single N-channel MOSFET in DFN8(5X6) package, designed for high current and low resistance applications. The device has an extremely low on-resistance (RDS(ON)), only 1.8mΩ at a VGS of 10V, ensuring extremely high energy efficiency during switching. Its maximum drain-source voltage (VDS) is 30V, and it supports a gate-source voltage (VGS) of ±20V, making it perform well in a variety of power electronics applications. The threshold voltage (Vth) of ME7636-G-VB is 1.7V, which enables it to respond quickly to control signals. With its powerful performance and compact package, this MOSFET is ideal for high-efficiency power management and switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 160A 1.8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
ME7636-G-VB Detailed parameter description

| **Parameter** | **Description** |
|-------------------------|-----------------------------|
| **Package** | DFN8(5X6) |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 2.5mΩ (VGS = 4.5V) |
| **On-resistance (RDS(ON))** | 1.8mΩ (VGS = 10V) |
| **Maximum leakage current (ID)** | 160A |
| **Technology** | Trench |

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Domain and module applications:

Application fields and modules

ME7636-G-VB is widely used in the following fields due to its excellent performance and multiple application scenarios:

1. **Power management**
This MOSFET performs well in switching power supplies (SMPS), DC-DC converters and other power management applications. Its low on-resistance and high current carrying capacity ensure efficient conversion and use of electric energy, improving system efficiency.

2. **Motor drive**
In motor control and drive applications, ME7636-G-VB can provide strong current support to ensure smooth and reliable motor startup and operation, suitable for industrial and household appliances.

3. **Battery management system**
This device is suitable for battery management system (BMS), which can switch efficiently during battery charging and discharging to ensure battery safety and life, especially in electric vehicles and energy storage systems.

4. **Renewable energy systems**
In solar inverters and wind power generation systems, the high efficiency of the ME7636-G-VB can support efficient energy conversion and management, and improve the utilization efficiency of renewable energy.

5. **Communication equipment**
This MOSFET can be used in various communication equipment, such as power management modules in base stations and data centers, to ensure stable operation of equipment under high loads and meet the requirements of modern communications for high efficiency and high reliability.

With its excellent technical specifications and diverse application prospects, the ME7636-G-VB is an ideal choice for high-performance power and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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