ME75N80CD-G-VB Product details
Product introduction:
ME75N80CD-G-VB is a high-performance **single N-channel MOSFET**, packaged in **TO252**, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of **80V**, and a drain current (ID) of **75A**, making it an excellent performer in situations requiring high power output. The threshold voltage (Vth) of ME75N80CD-G-VB is **3V**, and it has an extremely low on-resistance of **5mΩ** at **VGS=10V**, significantly reducing energy loss. This MOSFET uses **Trench technology** to provide efficient switching performance for a variety of electronic devices, and is very suitable for power management and high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Channel configuration**: Single N-channel (Single-N-Channel)
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
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Domain and module applications:
1. **Power Management**
ME75N80CD-G-VB can be widely used in DC-DC converters, power adapters and battery management systems. Its low on-resistance ensures efficient current transmission, thereby improving overall conversion efficiency and system performance.
2. **Electric Vehicles**
This MOSFET is suitable for power control and battery management systems in electric vehicles, providing stable switching control and high current support for the motor to ensure high efficiency of electric vehicles during driving.
3. **Efficient Lighting Systems**
ME75N80CD-G-VB can be used in LED drive circuits, providing fast switching and stable current control to support high-brightness and high-efficiency lighting solutions, suitable for commercial and residential lighting.
4. **Industrial Control**
In industrial automation systems, this device can be used as a switching element for motor drive and load control, ensuring stable performance in high-load and high-frequency applications and improving the operating efficiency of the equipment.
5. **Audio Amplifiers**
ME75N80CD-G-VB is suitable for switching applications in audio power amplifiers, capable of handling large current signals, providing excellent audio quality and low distortion performance.
6. **Home Appliances**
In various home appliances, this MOSFET can be used for power switching and control circuits, providing efficient and stable power management for appliances, improving the overall performance and service life of the equipment.
The excellent performance and wide applicability of ME75N80CD-G-VB make it an indispensable and important component in the design of modern electronic equipment, providing a strong guarantee for high efficiency and reliability in different fields.
Technical support:
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