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ME7170-G-VB Product details

Product introduction:

1. ME7170-G-VB Product Introduction: The ME7170-G-VB is a high-performance **N-channel MOSFET** in a **DFN8 (5x6mm) package** with excellent current handling capability and low on-resistance. The product has a drain-source voltage (VDS) rating of 30V and a gate-source voltage (VGS) range of ±20V, suitable for a wide range of application scenarios. The threshold voltage (Vth) of the ME7170-G-VB is 1.7V, ensuring that it can switch effectively at low voltages. The on-resistance (RDS(ON)) of this MOSFET is only 3mΩ at VGS=10V and 5mΩ at VGS=4.5V, supporting drain currents (ID) up to 120A, making it an excellent performer in power management and high-efficiency applications. The ME7170-G-VB uses **Trench technology** to ensure its reliability under high-frequency and high-efficiency operation.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
II. ME7170-G-VB Detailed Parameters

| **Parameter** | **Specification** | **Description** |
|-------------------------|------------------------------------|----------------------------------------------------|
| **Package** | DFN8 (5x6mm) | Miniaturized design, suitable for high-density circuit board layout|
| **Channel Configuration** | Single-N-Channel | Single N-channel structure, suitable for switching and amplification applications|
| **VDS (Drain-Source Voltage)** | 30V | Support low voltage applications, suitable for most power management occasions|
| **VGS (Gate-Source Voltage)** | ±20V | Wide gate drive voltage range, suitable for different control circuits|
| **Vth (Threshold Voltage)** | 1.7V | Lower threshold voltage, conducive to low power consumption applications|
| **RDS(ON)@VGS=4.5V** | 5mΩ | Low on-resistance, reducing switching losses|
| **RDS(ON)@VGS=10V** | 3mΩ | Extremely low on-resistance, supporting high current applications|
| **ID (drain current)** | 120A | High current handling capability, suitable for a variety of power management and drive circuits|
| **Technology** | Trench | Trench technology ensures high efficiency and good thermal performance|

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Domain and module applications:

III. Application fields and module examples of ME7170-G-VB

1. **Power management system**
- ME7170-G-VB is an ideal choice for **DC-DC converter** and **switching power supply**. Due to its ultra-low on-resistance and high current capability, it can effectively improve the efficiency of power conversion and is suitable for power management in laptops, mobile phone chargers and other portable devices.

2. **Electric vehicles**
- In the power control modules of **electric vehicles** and **hybrid vehicles**, ME7170-G-VB can be used as a switching element for motor drive. Its high current handling capability and reliable performance ensure high efficiency and stability of electric vehicles during acceleration and braking.

3. **Industrial control**
- This MOSFET is suitable for **industrial automation** systems such as sensor and actuator control, ensuring high efficiency and fast response. ME7170-G-VB can realize precise switching of motor control and automation equipment, and adapt to various industrial environments.

4. **Consumer electronics**
- ME7170-G-VB can also be used in **consumer electronics** devices, such as **smart home controllers** and **wearable devices**. Its low power consumption makes it an ideal choice for smart home devices, which can maintain high efficiency and low heat during long working hours.

5. **LED driver**
- In **LED lighting control** systems, ME7170-G-VB acts as a switching element to achieve efficient driving and dimming of LEDs. Its low on-resistance and high current capability can ensure long life and high brightness of LED lighting.

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**Summary**: ME7170-G-VB is a high-efficiency **N-channel MOSFET**. With its low on-resistance of 3mΩ, high current capability of 120A and small DFN8 package, it is suitable for **power management, electric vehicles, industrial control, consumer electronics** and **LED driver** and other fields, showing excellent performance and wide application potential.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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