ME6980ED-VB Product details
Product introduction:
ME6980ED-VB is a high-performance common-source dual N-channel MOSFET in TSSOP8 package, designed for compact power management and switching applications. The device has a maximum drain-source voltage (VDS) of 30V and supports a gate-source voltage (VGS) of ±20V, which is suitable for stable operation in a variety of working environments. The threshold voltage (Vth) of ME6980ED-VB is 1.7V, ensuring fast switching at a lower gate voltage. This MOSFET uses Trench technology, and its on-resistance (RDS(ON)) is 19mΩ and 12mΩ at VGS of 4.5V and 10V respectively. It has excellent power conversion efficiency and is suitable for high-efficiency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
| **Parameter** | **Description** |
|-------------------------|-----------------------------|
| **Package** | TSSOP8 |
| **Configuration** | Common source N+N channel|
| **Maximum drain-source voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 19mΩ (VGS = 4.5V) |
| | 12mΩ (VGS = 10V) |
| **Maximum drain current (ID)** | 8.6A |
| **Technology** | Trench |
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Domain and module applications:
ME6980ED-VB is widely used in the following fields due to its low on-resistance and high current capability:
1. **Power management**
This MOSFET can be used in DC-DC converters, linear regulators and power switch modules to provide efficient current control in power distribution and management, suitable for computer power supplies and chargers for mobile devices.
2. **Motor drive**
ME6980ED-VB is suitable for small motor drive applications, including fans, pumps and other power tools, capable of fast switching and reliability at high currents.
3. **Automotive electronics**
In automotive applications, this MOSFET can be used in battery management systems (BMS), LED lighting control and electric power steering (EPS), improving the system's response speed and energy efficiency and ensuring stability in harsh environments.
4. **Consumer electronics and smart home**
In smart home products and home appliances, ME6980ED-VB is used for power switching and current control, helping to achieve high-efficiency, low-power operation and extend battery life.
5. **Renewable energy systems**
This MOSFET can be used as a switching element in solar inverters and energy storage systems to improve power conversion efficiency, optimize the charging and discharging process, and promote the application of renewable energy.
With its excellent performance and diverse application scenarios, ME6980ED-VB has become an ideal choice in power electronics design, helping designers achieve the best balance between high efficiency and low loss.
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