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ME6978ED-VB Product details
Back to previous pageProduct introduction：
1. **ME6978ED-VB Product Introduction**
ME6978ED-VB is a high-performance **common source N+N type MOSFET**, using **TSSOP8 package**, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is **30V**, and the gate-source voltage (VGS) can operate in the range of ±20V, adapting to a variety of power management schemes. The **threshold voltage (Vth) of the device is 1.7V**, ensuring that it can turn on quickly in a low voltage environment. Its on-resistance (RDS(ON)) is **19mΩ** and **12mΩ** at VGS=4.5V and 10V respectively, showing excellent conductivity. With a **maximum drain current (ID) of 8.6A**, combined with **Trench technology**, it has superior thermal performance and current handling capabilities under high load conditions. ME6978ED-VB is particularly suitable for applications such as power management and load driving.
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ME6978ED-VB is a high-performance **common source N+N type MOSFET**, using **TSSOP8 package**, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is **30V**, and the gate-source voltage (VGS) can operate in the range of ±20V, adapting to a variety of power management schemes. The **threshold voltage (Vth) of the device is 1.7V**, ensuring that it can turn on quickly in a low voltage environment. Its on-resistance (RDS(ON)) is **19mΩ** and **12mΩ** at VGS=4.5V and 10V respectively, showing excellent conductivity. With a **maximum drain current (ID) of 8.6A**, combined with **Trench technology**, it has superior thermal performance and current handling capabilities under high load conditions. ME6978ED-VB is particularly suitable for applications such as power management and load driving.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
II. **Detailed parameter description**
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 30 | V | Maximum withstand drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate voltage operating range|
| Threshold voltage| Vth | 1.7 | V | Minimum voltage for MOSFET turn-on|
| On-resistance (4.5V) | RDS(ON) | 19 | mΩ | On-resistance at VGS=4.5V|
| On-resistance (10V) | RDS(ON) | 12 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 8.6 | A | Continuous drain current|
| Package type| - | TSSOP8 | - | Surface mount package for high density applications|
| Technology type| - | Trench | - | Trench technology for low conduction losses|
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| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 30 | V | Maximum withstand drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate voltage operating range|
| Threshold voltage| Vth | 1.7 | V | Minimum voltage for MOSFET turn-on|
| On-resistance (4.5V) | RDS(ON) | 19 | mΩ | On-resistance at VGS=4.5V|
| On-resistance (10V) | RDS(ON) | 12 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 8.6 | A | Continuous drain current|
| Package type| - | TSSOP8 | - | Surface mount package for high density applications|
| Technology type| - | Trench | - | Trench technology for low conduction losses|
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Domain and module applications：
3. **Application fields and module examples**
1. **Power management and switching power supply**
- ME6978ED-VB can be widely used in **switching power supply**, playing an important role in high-efficiency power conversion and voltage regulation. Its low on-resistance ensures that energy loss is minimized when the load changes, and is suitable for **DC-DC converters** and **power adapters**.
2. **Load drive**
- This MOSFET is very suitable for **load drive** applications, such as **motor drive** and **LED drive**. Its maximum drain current reaches 8.6A, which can efficiently drive various load devices and ensure stable operation of the system.
3. **Automotive electronics**
- In **automotive power management** systems, ME6978ED-VB can be used in **battery management**, **electric door control** and **on-board electronic equipment** to achieve precise control of current and meet the high efficiency and durability requirements of automotive electronics.
4. **Consumer Electronics**
- ME6978ED-VB is also suitable for **consumer electronics**, such as **smartphones, tablets** and **portable devices**, for power management and high-efficiency charging applications, ensuring excellent performance in a compact space.
5. **Industrial Control**
- In **industrial automation**, the device can be used in **sensor power supply, drive circuits** and **control systems** to ensure efficient current control and system stability.
With its excellent electrical characteristics and compact package design, ME6978ED-VB has become an ideal choice for **power management, load driving and automotive electronics, adapting to the needs of various complex applications and ensuring efficient and stable system operation.
1. **Power management and switching power supply**
- ME6978ED-VB can be widely used in **switching power supply**, playing an important role in high-efficiency power conversion and voltage regulation. Its low on-resistance ensures that energy loss is minimized when the load changes, and is suitable for **DC-DC converters** and **power adapters**.
2. **Load drive**
- This MOSFET is very suitable for **load drive** applications, such as **motor drive** and **LED drive**. Its maximum drain current reaches 8.6A, which can efficiently drive various load devices and ensure stable operation of the system.
3. **Automotive electronics**
- In **automotive power management** systems, ME6978ED-VB can be used in **battery management**, **electric door control** and **on-board electronic equipment** to achieve precise control of current and meet the high efficiency and durability requirements of automotive electronics.
4. **Consumer Electronics**
- ME6978ED-VB is also suitable for **consumer electronics**, such as **smartphones, tablets** and **portable devices**, for power management and high-efficiency charging applications, ensuring excellent performance in a compact space.
5. **Industrial Control**
- In **industrial automation**, the device can be used in **sensor power supply, drive circuits** and **control systems** to ensure efficient current control and system stability.
With its excellent electrical characteristics and compact package design, ME6978ED-VB has become an ideal choice for **power management, load driving and automotive electronics, adapting to the needs of various complex applications and ensuring efficient and stable system operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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