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ME6968ED-VB Product details
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1. ME6968ED-VB Product Introduction
ME6968ED-VB is a high-performance **N-channel MOSFET** in **TSSOP8 package**, with excellent current handling capability and low on-resistance. Its design adopts **common source configuration**, supporting a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V. The threshold voltage (Vth) ranges from 0.5V to 1.5V, allowing more flexible control and switching. The ME6968ED-VB has an on-resistance of 14mΩ at VGS=4.5V, supports a maximum drain current (ID) of 7.6A, and uses **trench technology**, which makes it perform well in high-frequency and high-efficiency applications, and is suitable for various power management and switching circuits.
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ME6968ED-VB is a high-performance **N-channel MOSFET** in **TSSOP8 package**, with excellent current handling capability and low on-resistance. Its design adopts **common source configuration**, supporting a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V. The threshold voltage (Vth) ranges from 0.5V to 1.5V, allowing more flexible control and switching. The ME6968ED-VB has an on-resistance of 14mΩ at VGS=4.5V, supports a maximum drain current (ID) of 7.6A, and uses **trench technology**, which makes it perform well in high-frequency and high-efficiency applications, and is suitable for various power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
II. ME6968ED-VB Detailed Parameters
| **Parameter** | **Specification** | **Description** |
|-------------------------|------------------------------------|----------------------------------------------------|
| **Package** | TSSOP8 | Miniaturized design, suitable for space-constrained applications|
| **Channel Configuration** | Common Drain-N+N-Channel | Suitable for parallel use to improve current handling capability|
| **VDS (Drain-Source Voltage)** | 20V | Support low voltage applications|
| **VGS (Gate-Source Voltage)** | ±12V | Allowable gate drive voltage range, suitable for a variety of circuit designs|
| **Vth (Threshold Voltage)** | 0.5V ~ 1.5V | Low threshold voltage, support low power applications|
| **RDS(ON)@VGS=2.5V** | 18mΩ | Low on-resistance, reduce switching losses|
| **RDS(ON)@VGS=4.5V** | 14mΩ | Lower on-resistance for high current applications|
| **ID (drain current)** | 7.6A | High current handling capability for a variety of power management circuits|
| **Technology** | Trench | Trench technology improves switching performance and thermal management capabilities|
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| **Parameter** | **Specification** | **Description** |
|-------------------------|------------------------------------|----------------------------------------------------|
| **Package** | TSSOP8 | Miniaturized design, suitable for space-constrained applications|
| **Channel Configuration** | Common Drain-N+N-Channel | Suitable for parallel use to improve current handling capability|
| **VDS (Drain-Source Voltage)** | 20V | Support low voltage applications|
| **VGS (Gate-Source Voltage)** | ±12V | Allowable gate drive voltage range, suitable for a variety of circuit designs|
| **Vth (Threshold Voltage)** | 0.5V ~ 1.5V | Low threshold voltage, support low power applications|
| **RDS(ON)@VGS=2.5V** | 18mΩ | Low on-resistance, reduce switching losses|
| **RDS(ON)@VGS=4.5V** | 14mΩ | Lower on-resistance for high current applications|
| **ID (drain current)** | 7.6A | High current handling capability for a variety of power management circuits|
| **Technology** | Trench | Trench technology improves switching performance and thermal management capabilities|
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Domain and module applications：
III. Application fields and module examples of ME6968ED-VB
1. **Power management system**
- ME6968ED-VB can be used in **DC-DC converter** and **switching power supply** as the main switching element to ensure efficient power conversion. In these applications, low on-resistance and high current capability can significantly reduce energy loss and improve overall system efficiency.
2. **Industrial automation**
- In **industrial automation control systems**, this MOSFET can be used to control motor drives and actuators. Due to its common source configuration, ME6968ED-VB can easily achieve efficient current switching control, ensuring fast response and high stability of the equipment.
3. **LED drive**
- In **LED lighting control modules**, ME6968ED-VB can be used as a switching device to control the switching and brightness adjustment of LEDs. Its low on-resistance and high current handling capability ensure high efficiency and reliability of LED lighting systems.
4. **Smart Home and Consumer Electronics**
- In **smart home devices**, ME6968ED-VB can be used for **power management** and **signal switching**, achieving long standby time and high efficiency through low power control. This makes the device widely used in smart lamps, sensors and wireless control modules.
5. **Power Tools and Consumer Products**
- In **power tools** and other consumer products, ME6968ED-VB provides reliable current control and efficient power management to support the operation of high-power motors, meeting consumers' requirements for high performance and long life.
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**Summary**: ME6968ED-VB is a high-efficiency **N-channel MOSFET**. With its low on-resistance of 14mΩ, high current capability of 7.6A and small TSSOP8 package, it is suitable for **power management, industrial automation, LED drive, smart home** and **power tools** and other fields, showing excellent performance and wide application potential.
1. **Power management system**
- ME6968ED-VB can be used in **DC-DC converter** and **switching power supply** as the main switching element to ensure efficient power conversion. In these applications, low on-resistance and high current capability can significantly reduce energy loss and improve overall system efficiency.
2. **Industrial automation**
- In **industrial automation control systems**, this MOSFET can be used to control motor drives and actuators. Due to its common source configuration, ME6968ED-VB can easily achieve efficient current switching control, ensuring fast response and high stability of the equipment.
3. **LED drive**
- In **LED lighting control modules**, ME6968ED-VB can be used as a switching device to control the switching and brightness adjustment of LEDs. Its low on-resistance and high current handling capability ensure high efficiency and reliability of LED lighting systems.
4. **Smart Home and Consumer Electronics**
- In **smart home devices**, ME6968ED-VB can be used for **power management** and **signal switching**, achieving long standby time and high efficiency through low power control. This makes the device widely used in smart lamps, sensors and wireless control modules.
5. **Power Tools and Consumer Products**
- In **power tools** and other consumer products, ME6968ED-VB provides reliable current control and efficient power management to support the operation of high-power motors, meeting consumers' requirements for high performance and long life.
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**Summary**: ME6968ED-VB is a high-efficiency **N-channel MOSFET**. With its low on-resistance of 14mΩ, high current capability of 7.6A and small TSSOP8 package, it is suitable for **power management, industrial automation, LED drive, smart home** and **power tools** and other fields, showing excellent performance and wide application potential.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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