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ME6913D-VB Product details
Back to previous pageProduct introduction：
1. ME6913D-VB Product Introduction
ME6913D-VB is a high-performance **dual P-channel MOSFET**, using **TSSOP8 package**, designed for high-efficiency current control and power management applications. Its drain-source voltage (V_DS) is **-20V**, with **±20V gate-source voltage (V_GS)** range, and can work stably at a lower turn-on voltage (V_th), the turn-on voltage is **-1.2V**, and the maximum continuous drain current (I_D) can reach **-7.5A**. The on-resistance of this MOSFET is **18mΩ** and **13mΩ** at **4.5V** and **10V** gate-source voltages, respectively, ensuring low power consumption and high efficiency. Using advanced **trench (Trench) technology**, ME6913D-VB performs well in switching power supplies, load switches and various power management systems.
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ME6913D-VB is a high-performance **dual P-channel MOSFET**, using **TSSOP8 package**, designed for high-efficiency current control and power management applications. Its drain-source voltage (V_DS) is **-20V**, with **±20V gate-source voltage (V_GS)** range, and can work stably at a lower turn-on voltage (V_th), the turn-on voltage is **-1.2V**, and the maximum continuous drain current (I_D) can reach **-7.5A**. The on-resistance of this MOSFET is **18mΩ** and **13mΩ** at **4.5V** and **10V** gate-source voltages, respectively, ensuring low power consumption and high efficiency. Using advanced **trench (Trench) technology**, ME6913D-VB performs well in switching power supplies, load switches and various power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
2. ME6913D-VB MOSFET Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|------------------------------------------|
| **Package Type** | TSSOP8 | Compact package, suitable for space-constrained applications|
| **MOSFET Type** | Dual P-Channel | For load switching and bidirectional current control|
| **Drain-Source Voltage (V_DS)** | -20V | Maximum drain-source voltage, suitable for medium and low voltage power supplies|
| **Gate-Source Voltage (V_GS)** | ±20V | Gate control voltage range, providing good switching performance|
| **Turning Voltage (V_th)** | -1.2V | Gate-Source Voltage starts to turn on when this value is reached|
| **On-Resistance (R_DS(ON))** | 18mΩ @ V_GS=4.5V | On-resistance at 4.5V gate voltage|
| **On-resistance (R_DS(ON))** | 13mΩ @ V_GS=10V | On-resistance at 10V gate voltage|
| **Maximum drain current (I_D)** | -7.5A | Maximum drain current that can be carried|
| **Technology** | Trench | Using trench technology to improve performance and reduce conduction losses|
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| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|------------------------------------------|
| **Package Type** | TSSOP8 | Compact package, suitable for space-constrained applications|
| **MOSFET Type** | Dual P-Channel | For load switching and bidirectional current control|
| **Drain-Source Voltage (V_DS)** | -20V | Maximum drain-source voltage, suitable for medium and low voltage power supplies|
| **Gate-Source Voltage (V_GS)** | ±20V | Gate control voltage range, providing good switching performance|
| **Turning Voltage (V_th)** | -1.2V | Gate-Source Voltage starts to turn on when this value is reached|
| **On-Resistance (R_DS(ON))** | 18mΩ @ V_GS=4.5V | On-resistance at 4.5V gate voltage|
| **On-resistance (R_DS(ON))** | 13mΩ @ V_GS=10V | On-resistance at 10V gate voltage|
| **Maximum drain current (I_D)** | -7.5A | Maximum drain current that can be carried|
| **Technology** | Trench | Using trench technology to improve performance and reduce conduction losses|
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Domain and module applications：
III. Application fields and module examples of ME6913D-VB
1. **Power management and load switching**
ME6913D-VB is widely used in **power management modules**, such as battery management systems and DC-DC converters. Its low on-resistance characteristics can effectively reduce power consumption and ensure efficient operation of the system under different load conditions.
2. **Switching power supply (SMPS)**
In high-frequency **switching power supplies**, ME6913D-VB can switch quickly and optimize power conversion efficiency, and is suitable for consumer electronics, LED drivers and other fields. Its stable switching characteristics ensure high efficiency and reliability of the system.
3. **Power tools and motor control**
This MOSFET is also suitable for **power tools** and **motor drive systems**, such as electric scooters and robots. Its dual P-channel design makes bidirectional current control simple, which helps to achieve precise motor control.
4. **Home appliance control system**
ME6913D-VB can be used as a load switch in **home appliance control system** to control the power switches of various devices and provide a stable power supply, which is suitable for smart home applications.
5. **In-vehicle electronic system**
In automotive electronics, ME6913D-VB can be used for power distribution and load management, such as battery management systems and on-board chargers, providing efficient and reliable power management solutions.
ME6913D-VB is an ideal choice for power management, switching power supplies, power tools and other fields due to its low conduction loss and high current carrying capacity. Its excellent performance and versatility make it widely used in modern electronic applications.
1. **Power management and load switching**
ME6913D-VB is widely used in **power management modules**, such as battery management systems and DC-DC converters. Its low on-resistance characteristics can effectively reduce power consumption and ensure efficient operation of the system under different load conditions.
2. **Switching power supply (SMPS)**
In high-frequency **switching power supplies**, ME6913D-VB can switch quickly and optimize power conversion efficiency, and is suitable for consumer electronics, LED drivers and other fields. Its stable switching characteristics ensure high efficiency and reliability of the system.
3. **Power tools and motor control**
This MOSFET is also suitable for **power tools** and **motor drive systems**, such as electric scooters and robots. Its dual P-channel design makes bidirectional current control simple, which helps to achieve precise motor control.
4. **Home appliance control system**
ME6913D-VB can be used as a load switch in **home appliance control system** to control the power switches of various devices and provide a stable power supply, which is suitable for smart home applications.
5. **In-vehicle electronic system**
In automotive electronics, ME6913D-VB can be used for power distribution and load management, such as battery management systems and on-board chargers, providing efficient and reliable power management solutions.
ME6913D-VB is an ideal choice for power management, switching power supplies, power tools and other fields due to its low conduction loss and high current carrying capacity. Its excellent performance and versatility make it widely used in modern electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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