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ME60N04-VB Product details
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1. ME60N04-VB Product Introduction
ME60N04-VB is a high-performance **single N-channel MOSFET**, which adopts **TO252 package** and is suitable for scenarios requiring efficient current management and fast switching. Its drain-source voltage (V_DS) is **40V**, the gate-source voltage (V_GS) is **±20V**, and it operates at **2.5V turn-on voltage (V_th)**, which can support up to **55A** of continuous drain current. This MOSFET has a low on-resistance (R_DS(ON)), which is **14mΩ** and **12mΩ** at **4.5V** and **10V** gate-source voltages, respectively, effectively reducing power consumption and improving efficiency. With **trench technology**, it demonstrates excellent performance in applications such as switching power supplies, DC-DC converters, and motor drives.
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ME60N04-VB is a high-performance **single N-channel MOSFET**, which adopts **TO252 package** and is suitable for scenarios requiring efficient current management and fast switching. Its drain-source voltage (V_DS) is **40V**, the gate-source voltage (V_GS) is **±20V**, and it operates at **2.5V turn-on voltage (V_th)**, which can support up to **55A** of continuous drain current. This MOSFET has a low on-resistance (R_DS(ON)), which is **14mΩ** and **12mΩ** at **4.5V** and **10V** gate-source voltages, respectively, effectively reducing power consumption and improving efficiency. With **trench technology**, it demonstrates excellent performance in applications such as switching power supplies, DC-DC converters, and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. ME60N04-VB MOSFET Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|------------------------------------------|
| **Package type** | TO252 | Provides good heat dissipation, suitable for compact circuit design|
| **MOSFET type** | Single N-Channel | For switch control and high current handling|
| **Drain-source voltage (V_DS)** | 40V | Maximum drain-source voltage, suitable for medium and low voltage applications|
| **Gate-source voltage (V_GS)** | ±20V | Gate control voltage range to ensure stability|
| **Turning voltage (V_th)** | 2.5V | Gate-source voltage starts to turn on when this value is reached|
| **On-resistance (R_DS(ON))** | 14mΩ @ V_GS=4.5V | On-resistance at 4.5V gate voltage|
| **On-resistance (R_DS(ON))** | 12mΩ @ V_GS=10V | On-resistance at 10V gate voltage|
| **Maximum drain current (I_D)** | 55A | Maximum drain current that can be carried|
| **Technology** | Trench | Advanced trench technology to improve performance and reduce losses|
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| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|------------------------------------------|
| **Package type** | TO252 | Provides good heat dissipation, suitable for compact circuit design|
| **MOSFET type** | Single N-Channel | For switch control and high current handling|
| **Drain-source voltage (V_DS)** | 40V | Maximum drain-source voltage, suitable for medium and low voltage applications|
| **Gate-source voltage (V_GS)** | ±20V | Gate control voltage range to ensure stability|
| **Turning voltage (V_th)** | 2.5V | Gate-source voltage starts to turn on when this value is reached|
| **On-resistance (R_DS(ON))** | 14mΩ @ V_GS=4.5V | On-resistance at 4.5V gate voltage|
| **On-resistance (R_DS(ON))** | 12mΩ @ V_GS=10V | On-resistance at 10V gate voltage|
| **Maximum drain current (I_D)** | 55A | Maximum drain current that can be carried|
| **Technology** | Trench | Advanced trench technology to improve performance and reduce losses|
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Domain and module applications：
3. Application fields and module examples of ME60N04-VB
1. **Power management system and DC-DC converter**
In **DC-DC converter** and power modules, ME60N04-VB can switch quickly and transmit current efficiently, which helps to reduce energy loss in the power conversion process. Its 40V drain-source voltage is suitable for medium and low voltage power supply systems, such as server power modules and power tool chargers.
2. **Motor drive and motion control**
This MOSFET is very suitable for **motor control modules**, such as brushless DC motor controllers in electric scooters and drones. Its low on-resistance and high current carrying capacity make it efficient and stable in high current drive scenarios.
3. **Automotive electronics and vehicle systems**
In automotive electronic systems, such as battery management systems (BMS) or electronic power steering systems (EPS), ME60N04-VB can effectively handle vehicle currents and improve circuit reliability and efficiency.
4. **Load Switch and MOSFET Switch Matrix**
In scenarios where **load switches** are required, such as smart home power control and communication equipment, the ME60N04-VB provides low conduction losses to ensure efficient current transmission in the switch matrix.
5. **Switching Power Supply (SMPS)**
This MOSFET is also suitable for high-frequency **switching power supply (SMPS)**, ensuring voltage regulation performance in consumer electronic devices and industrial control equipment, and providing efficient power conversion.
With its excellent conduction performance, low resistance and high current carrying capacity, the ME60N04-VB has shown great application potential in power management, automotive electronics, motion control and other fields, and is an ideal choice for medium and low voltage, high frequency switching applications.
1. **Power management system and DC-DC converter**
In **DC-DC converter** and power modules, ME60N04-VB can switch quickly and transmit current efficiently, which helps to reduce energy loss in the power conversion process. Its 40V drain-source voltage is suitable for medium and low voltage power supply systems, such as server power modules and power tool chargers.
2. **Motor drive and motion control**
This MOSFET is very suitable for **motor control modules**, such as brushless DC motor controllers in electric scooters and drones. Its low on-resistance and high current carrying capacity make it efficient and stable in high current drive scenarios.
3. **Automotive electronics and vehicle systems**
In automotive electronic systems, such as battery management systems (BMS) or electronic power steering systems (EPS), ME60N04-VB can effectively handle vehicle currents and improve circuit reliability and efficiency.
4. **Load Switch and MOSFET Switch Matrix**
In scenarios where **load switches** are required, such as smart home power control and communication equipment, the ME60N04-VB provides low conduction losses to ensure efficient current transmission in the switch matrix.
5. **Switching Power Supply (SMPS)**
This MOSFET is also suitable for high-frequency **switching power supply (SMPS)**, ensuring voltage regulation performance in consumer electronic devices and industrial control equipment, and providing efficient power conversion.
With its excellent conduction performance, low resistance and high current carrying capacity, the ME60N04-VB has shown great application potential in power management, automotive electronics, motion control and other fields, and is an ideal choice for medium and low voltage, high frequency switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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