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ME60N03AS-VB Product details

Product introduction:

ME60N03AS-VB Product Introduction

ME60N03AS-VB is a single N-channel MOSFET in a TO-252 package, designed for high-efficiency power electronics applications. The device has a maximum drain-source voltage (VDS) of 20V, supports a gate-source voltage (VGS) of ±20V, and can carry a leakage current of up to 100A. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, ensuring fast turn-on at low voltage. Using advanced Trench technology, the MOSFET has an on-resistance (RDS(ON)) of 6mΩ and 4.5mΩ at VGS of 2.5V and 4.5V, respectively, providing excellent switching performance and low loss.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 100A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
ME60N03AS-VB Detailed parameter description

| **Parameter** | **Description** |
|-------------------------|-----------------------------|
| **Package** | TO-252 |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 20V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 0.5V ~ 1.5V |
| **On-resistance (RDS(ON))** | 6mΩ (VGS = 2.5V) |
| | 4.5mΩ (VGS = 4.5V) |
| **Maximum drain current (ID)** | 100A |
| **Technology** | Trench |

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Domain and module applications:

Applications and modules

ME60N03AS-VB can be widely used in the following fields with its low on-resistance, high current capability and excellent switching performance:

1. **Power management and load switching**
Suitable for DC-DC converters and power switch modules, providing stable load control and high efficiency at high currents, widely used in servers, communication base stations and computing systems.

2. **Automotive electronic systems**
In automotive battery management systems (BMS), electric power steering (EPS) and on-board power management modules, the high current carrying capacity and low loss characteristics of ME60N03AS-VB can improve system efficiency and stability.

3. **Power tools and motor control**
This MOSFET is very suitable for power tools and small motor drive applications, ensuring that the equipment has the ability to respond quickly and operate reliably at high power output.

4. **Consumer Electronics and Smart Home**
In power management modules for smart home devices, portable electronics, and home appliances, the ME60N03AS-VB provides efficient current control, helping devices reduce power consumption and improve battery life.

5. **Solar Energy and Energy Storage Systems**
The ME60N03AS-VB can be used as a switching element in solar inverters to improve energy conversion efficiency and optimize battery charging and discharging in energy storage systems.

The ME60N03AS-VB is a high-performance MOSFET suitable for a variety of power electronic modules, helping designers achieve the best balance between high efficiency and low losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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