中文
English
ME55N06-VB Product details
Back to previous pageProduct introduction：
1. **ME55N06-VB Product Introduction**
ME55N06-VB is a **single N-channel MOSFET**, using **TO252 package**, designed for high current and medium voltage applications. The device has a maximum drain-source voltage (VDS) of **60V** and a gate-source voltage (VGS) range of ±20V, which can provide stable performance under harsh load conditions. Its **threshold voltage (Vth) is 2.5V**, which can achieve fast switching operation even at lower drive voltages. The low on-resistance (RDS(ON)) is **13mΩ** and **10mΩ** at VGS=4.5V and 10V respectively, ensuring low loss and high efficiency during switching. The **maximum drain current (ID) of this MOSFET is 58A**, and it uses **Trench technology**, which improves thermal conductivity and switching speed while ensuring high power handling capability, making it very suitable for power tools, power modules and automotive electronics.
---
ME55N06-VB is a **single N-channel MOSFET**, using **TO252 package**, designed for high current and medium voltage applications. The device has a maximum drain-source voltage (VDS) of **60V** and a gate-source voltage (VGS) range of ±20V, which can provide stable performance under harsh load conditions. Its **threshold voltage (Vth) is 2.5V**, which can achieve fast switching operation even at lower drive voltages. The low on-resistance (RDS(ON)) is **13mΩ** and **10mΩ** at VGS=4.5V and 10V respectively, ensuring low loss and high efficiency during switching. The **maximum drain current (ID) of this MOSFET is 58A**, and it uses **Trench technology**, which improves thermal conductivity and switching speed while ensuring high power handling capability, making it very suitable for power tools, power modules and automotive electronics.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. **Detailed parameter description**
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 60 | V | Maximum withstand drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate voltage operating range|
| Threshold voltage| Vth | 2.5 | V | Minimum voltage for MOSFET turn-on|
| On-resistance (4.5V) | RDS(ON) | 13 | mΩ | On-resistance at VGS=4.5V|
| On-resistance (10V) | RDS(ON) | 10 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 58 | A | Continuous drain current|
| Package type| - | TO252 | - | Suitable for high power surface mount applications|
| Technology type| - | Trench | - | Trench technology for low conduction losses|
---
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 60 | V | Maximum withstand drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate voltage operating range|
| Threshold voltage| Vth | 2.5 | V | Minimum voltage for MOSFET turn-on|
| On-resistance (4.5V) | RDS(ON) | 13 | mΩ | On-resistance at VGS=4.5V|
| On-resistance (10V) | RDS(ON) | 10 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 58 | A | Continuous drain current|
| Package type| - | TO252 | - | Suitable for high power surface mount applications|
| Technology type| - | Trench | - | Trench technology for low conduction losses|
---
Domain and module applications：
III. **Application fields and module examples**
1. **Power tools and motor drive systems**
- ME55N06-VB can efficiently drive electric motors and is very suitable for applications such as **power tools, fans and pumps**. Its low on-resistance and high current capability can reduce power loss and improve the efficiency and reliability of the motor.
2. **DC-DC converters and power management modules**
- In **DC-DC converters** and **voltage regulators**, this MOSFET can be used as a switching element to ensure efficient energy conversion and is suitable for communication equipment and industrial power modules.
3. **Automotive electronic systems**
- This device is widely used in **automotive power management**, **LED lighting systems** and **in-vehicle motor control**. Its high reliability and voltage resistance meet the demanding requirements of automotive electronics.
4. **Uninterruptible Power Supply (UPS) and Battery Management Systems**
- In **UPS systems** and **lithium battery protection modules**, the ME55N06-VB is able to manage high current charge and discharge operations, ensuring battery safety and extending battery life.
5. **Industrial Automation Equipment**
- The MOSFET also excels in motor control modules and relay replacement applications in **automation systems**, providing fast response and low power consumption solutions.
With its high current handling capability, low conduction loss and stable electrical characteristics, the ME55N06-VB is an ideal choice for a variety of applications such as **power tools, automotive electronics and power management modules**. Its durability and high efficiency ensure reliable operation of the system under harsh conditions.
1. **Power tools and motor drive systems**
- ME55N06-VB can efficiently drive electric motors and is very suitable for applications such as **power tools, fans and pumps**. Its low on-resistance and high current capability can reduce power loss and improve the efficiency and reliability of the motor.
2. **DC-DC converters and power management modules**
- In **DC-DC converters** and **voltage regulators**, this MOSFET can be used as a switching element to ensure efficient energy conversion and is suitable for communication equipment and industrial power modules.
3. **Automotive electronic systems**
- This device is widely used in **automotive power management**, **LED lighting systems** and **in-vehicle motor control**. Its high reliability and voltage resistance meet the demanding requirements of automotive electronics.
4. **Uninterruptible Power Supply (UPS) and Battery Management Systems**
- In **UPS systems** and **lithium battery protection modules**, the ME55N06-VB is able to manage high current charge and discharge operations, ensuring battery safety and extending battery life.
5. **Industrial Automation Equipment**
- The MOSFET also excels in motor control modules and relay replacement applications in **automation systems**, providing fast response and low power consumption solutions.
With its high current handling capability, low conduction loss and stable electrical characteristics, the ME55N06-VB is an ideal choice for a variety of applications such as **power tools, automotive electronics and power management modules**. Its durability and high efficiency ensure reliable operation of the system under harsh conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
