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ME50N10-VB Product details
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1. ME50N10-VB Product Introduction
ME50N10-VB is a high-performance **N-channel MOSFET** in **TO252 package**, designed for high voltage and high current applications. Its drain-source voltage (VDS) is 100V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 1.8V. The device has an on-resistance RDS(ON) of only 18mΩ at VGS=10V and can carry a current of up to 45A. With low conduction losses and excellent thermal performance, this MOSFET is particularly suitable for high-efficiency power systems, switching circuits, and industrial control equipment.
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ME50N10-VB is a high-performance **N-channel MOSFET** in **TO252 package**, designed for high voltage and high current applications. Its drain-source voltage (VDS) is 100V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 1.8V. The device has an on-resistance RDS(ON) of only 18mΩ at VGS=10V and can carry a current of up to 45A. With low conduction losses and excellent thermal performance, this MOSFET is particularly suitable for high-efficiency power systems, switching circuits, and industrial control equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. ME50N10-VB Detailed Parameter Description
| **Parameter** | **Specification** | **Description** |
|-------------------------|-----------------------------------|---------------------------------------------------|
| **Package** | TO252 | Compact package, supports high current handling, suitable for high-density circuit layout|
| **Channel Type** | Single-N-Channel | Single-channel design simplifies switching and control applications|
| **VDS (Drain-Source Voltage)** | 100V | Supports high-voltage applications|
| **VGS (Gate-Source Voltage)** | ±20V | Wide gate drive voltage range|
| **Vth (Threshold Voltage)** | 1.8V | Low threshold ensures low power triggering|
| **RDS(ON)@VGS=10V** | 18mΩ | Low on-resistance reduces conduction loss and improves circuit efficiency|
| **ID (Drain current)** | 45A | Supports high current transmission|
| **Technology** | Trench | Trench technology improves conduction performance and thermal management capabilities|
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| **Parameter** | **Specification** | **Description** |
|-------------------------|-----------------------------------|---------------------------------------------------|
| **Package** | TO252 | Compact package, supports high current handling, suitable for high-density circuit layout|
| **Channel Type** | Single-N-Channel | Single-channel design simplifies switching and control applications|
| **VDS (Drain-Source Voltage)** | 100V | Supports high-voltage applications|
| **VGS (Gate-Source Voltage)** | ±20V | Wide gate drive voltage range|
| **Vth (Threshold Voltage)** | 1.8V | Low threshold ensures low power triggering|
| **RDS(ON)@VGS=10V** | 18mΩ | Low on-resistance reduces conduction loss and improves circuit efficiency|
| **ID (Drain current)** | 45A | Supports high current transmission|
| **Technology** | Trench | Trench technology improves conduction performance and thermal management capabilities|
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Domain and module applications：
III. Application fields and module examples of ME50N10-VB
1. **Power management system**
- ME50N10-VB can be used in **DC-DC converter** and **Uninterruptible power supply (UPS)** systems. Its low on-resistance and high current capability ensure that the equipment works efficiently under high load and reduces power loss.
2. **Switching power supply (SMPS)**
- This MOSFET is suitable for use as the main switching element in a switching power supply. Its 100V high-voltage carrying capacity enables it to easily cope with voltage fluctuations in industrial and domestic power systems, ensuring stable operation of the equipment.
3. **Electric vehicle (EV) charging module**
- In the EV charging module, the high current handling capability of ME50N10-VB enables it to efficiently control the current during **DC fast charging**, ensuring a safe and stable charging process.
4. **Industrial Control and Motor Drive**
- ME50N10-VB is very suitable for **industrial control circuits** and **motor drive modules**. It can handle high voltage and high current signals to ensure stable and efficient operation of motors. It is suitable for automation equipment and large mechanical systems.
5. **Lighting System Control**
- In LED lighting systems, ME50N10-VB can act as a switch controller for LED light strings, effectively reducing energy consumption and ensuring stable lighting. Its high voltage capability also makes it suitable for outdoor and high-power lighting equipment.
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**Summary**: ME50N10-VB is a single N-channel MOSFET suitable for high voltage and high current applications. Its 100V drain voltage and low on-resistance of 18mΩ make it an ideal choice for **power management, switching circuits, charging systems and industrial control**. With efficient trench technology and excellent thermal performance, the ME50N10-VB helps designers achieve more reliable and efficient electronic systems.
1. **Power management system**
- ME50N10-VB can be used in **DC-DC converter** and **Uninterruptible power supply (UPS)** systems. Its low on-resistance and high current capability ensure that the equipment works efficiently under high load and reduces power loss.
2. **Switching power supply (SMPS)**
- This MOSFET is suitable for use as the main switching element in a switching power supply. Its 100V high-voltage carrying capacity enables it to easily cope with voltage fluctuations in industrial and domestic power systems, ensuring stable operation of the equipment.
3. **Electric vehicle (EV) charging module**
- In the EV charging module, the high current handling capability of ME50N10-VB enables it to efficiently control the current during **DC fast charging**, ensuring a safe and stable charging process.
4. **Industrial Control and Motor Drive**
- ME50N10-VB is very suitable for **industrial control circuits** and **motor drive modules**. It can handle high voltage and high current signals to ensure stable and efficient operation of motors. It is suitable for automation equipment and large mechanical systems.
5. **Lighting System Control**
- In LED lighting systems, ME50N10-VB can act as a switch controller for LED light strings, effectively reducing energy consumption and ensuring stable lighting. Its high voltage capability also makes it suitable for outdoor and high-power lighting equipment.
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**Summary**: ME50N10-VB is a single N-channel MOSFET suitable for high voltage and high current applications. Its 100V drain voltage and low on-resistance of 18mΩ make it an ideal choice for **power management, switching circuits, charging systems and industrial control**. With efficient trench technology and excellent thermal performance, the ME50N10-VB helps designers achieve more reliable and efficient electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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