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ME50N06GA-VB Product details
Back to previous pageProduct introduction：
1. ME50N06GA-VB Product Introduction
ME50N06GA-VB is a **single N-channel MOSFET**, using **TO252 package** (DPAK), which is widely used in various power conversion and control circuits with its excellent conduction performance and high current capability. The device has a **drain-source voltage (VDS)** of 60V, which is suitable for medium voltage load applications. Its **gate-source voltage (VGS)** range is ±20V, ensuring good control flexibility. With **trench technology**, this MOSFET performs well in high-frequency switching circuits, reducing conduction losses and heat dissipation. The **maximum continuous current (ID)** of ME50N06GA-VB is 58A, and its low **RDS(ON)** characteristics (10mΩ @ VGS=10V) make it an ideal choice for high current applications.
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ME50N06GA-VB is a **single N-channel MOSFET**, using **TO252 package** (DPAK), which is widely used in various power conversion and control circuits with its excellent conduction performance and high current capability. The device has a **drain-source voltage (VDS)** of 60V, which is suitable for medium voltage load applications. Its **gate-source voltage (VGS)** range is ±20V, ensuring good control flexibility. With **trench technology**, this MOSFET performs well in high-frequency switching circuits, reducing conduction losses and heat dissipation. The **maximum continuous current (ID)** of ME50N06GA-VB is 58A, and its low **RDS(ON)** characteristics (10mΩ @ VGS=10V) make it an ideal choice for high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. ME50N06GA-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|----------------------------------------------|
| **Package** | TO252 (DPAK) | Surface mount package, good heat dissipation, suitable for high-density circuit design|
| **Channel type** | Single N-channel | Suitable for power switching and load driving|
| **VDS** | 60V | Upper limit of drain-source voltage, supporting medium voltage applications|
| **VGS** | ±20V | Gate-source voltage control range, enhancing control flexibility|
| **Vth (threshold voltage)** | 2.5V | Minimum gate drive voltage to turn on the MOSFET|
| **RDS(ON)** | 13mΩ (@VGS=4.5V) | Lower on-resistance reduces power loss|
| | 10mΩ (@VGS=10V) | Meet high current conduction requirements|
| **ID (maximum drain current)** | 58A | Support continuous conduction of large current loads|
| **Technology** | Trench | Improve switching efficiency, reduce conduction loss and heat|
| **Application temperature range** | -55°C ~ 150°C | Support long-term stable operation in industrial and consumer environments|
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|----------------------------------------------|
| **Package** | TO252 (DPAK) | Surface mount package, good heat dissipation, suitable for high-density circuit design|
| **Channel type** | Single N-channel | Suitable for power switching and load driving|
| **VDS** | 60V | Upper limit of drain-source voltage, supporting medium voltage applications|
| **VGS** | ±20V | Gate-source voltage control range, enhancing control flexibility|
| **Vth (threshold voltage)** | 2.5V | Minimum gate drive voltage to turn on the MOSFET|
| **RDS(ON)** | 13mΩ (@VGS=4.5V) | Lower on-resistance reduces power loss|
| | 10mΩ (@VGS=10V) | Meet high current conduction requirements|
| **ID (maximum drain current)** | 58A | Support continuous conduction of large current loads|
| **Technology** | Trench | Improve switching efficiency, reduce conduction loss and heat|
| **Application temperature range** | -55°C ~ 150°C | Support long-term stable operation in industrial and consumer environments|
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Domain and module applications：
III. ME50N06GA-VB Application Fields and Module Examples
1. **Power Switch and Inverter Module**
ME50N06GA-VB is commonly used in DC-DC converters and inverters. As the main switching device, it supports efficient power conversion, helps reduce energy consumption and improves system stability.
2. **Motor Drive Circuit**
In the motor drive module of power tools, fans and industrial automation equipment, this MOSFET is responsible for driving high current loads to ensure stable operation of the motor at high efficiency.
3. **Electric Vehicles and Battery Management System (BMS)**
In BMS and charge and discharge modules, ME50N06GA-VB is used as a power switch device to ensure safe charging and energy management of battery packs.
4. **Home Appliances and Consumer Electronics Devices**
This MOSFET is widely used in power management modules in smart home appliances and electronic devices to improve energy efficiency and reduce electromagnetic interference.
5. **LED lighting system**
In the LED drive circuit, ME50N06GA-VB supports high-frequency switching, optimizes the power conversion efficiency of the lighting system, and achieves precise brightness control.
With its excellent conduction performance and high current carrying capacity, ME50N06GA-VB has become an ideal choice for power management, industrial control, consumer electronics and other fields, and is suitable for a variety of high-frequency, high-current switching application scenarios.
1. **Power Switch and Inverter Module**
ME50N06GA-VB is commonly used in DC-DC converters and inverters. As the main switching device, it supports efficient power conversion, helps reduce energy consumption and improves system stability.
2. **Motor Drive Circuit**
In the motor drive module of power tools, fans and industrial automation equipment, this MOSFET is responsible for driving high current loads to ensure stable operation of the motor at high efficiency.
3. **Electric Vehicles and Battery Management System (BMS)**
In BMS and charge and discharge modules, ME50N06GA-VB is used as a power switch device to ensure safe charging and energy management of battery packs.
4. **Home Appliances and Consumer Electronics Devices**
This MOSFET is widely used in power management modules in smart home appliances and electronic devices to improve energy efficiency and reduce electromagnetic interference.
5. **LED lighting system**
In the LED drive circuit, ME50N06GA-VB supports high-frequency switching, optimizes the power conversion efficiency of the lighting system, and achieves precise brightness control.
With its excellent conduction performance and high current carrying capacity, ME50N06GA-VB has become an ideal choice for power management, industrial control, consumer electronics and other fields, and is suitable for a variety of high-frequency, high-current switching application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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