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ME50N04-VB Product details
Back to previous pageProduct introduction：
1. **ME50N04-VB Product Introduction**
ME50N04-VB is a high-performance **single N-channel MOSFET** in **TO252 package**, which is designed to meet the needs of medium voltage and high current applications. The maximum drain-source voltage (VDS) is **40V**, and the gate-source voltage (VGS) range is ±20V, which is suitable for operation under complex load conditions. The threshold voltage (Vth) of the device is **2.5V**, which can be turned on efficiently at a lower drive voltage. Its on-resistance (RDS(ON)) is **6mΩ** and **5mΩ** at VGS=4.5V and 10V respectively, demonstrating its extremely low conduction loss and excellent switching performance. The maximum continuous drain current (ID) of ME50N04-VB is as high as **85A**, and it uses **Trench technology**, which greatly improves the current handling capability and thermal performance, making it very suitable for power electronics and high-frequency switching systems.
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ME50N04-VB is a high-performance **single N-channel MOSFET** in **TO252 package**, which is designed to meet the needs of medium voltage and high current applications. The maximum drain-source voltage (VDS) is **40V**, and the gate-source voltage (VGS) range is ±20V, which is suitable for operation under complex load conditions. The threshold voltage (Vth) of the device is **2.5V**, which can be turned on efficiently at a lower drive voltage. Its on-resistance (RDS(ON)) is **6mΩ** and **5mΩ** at VGS=4.5V and 10V respectively, demonstrating its extremely low conduction loss and excellent switching performance. The maximum continuous drain current (ID) of ME50N04-VB is as high as **85A**, and it uses **Trench technology**, which greatly improves the current handling capability and thermal performance, making it very suitable for power electronics and high-frequency switching systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. **Detailed parameter description**
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 40 | V | Maximum drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate-tolerable voltage range|
| Threshold voltage| Vth | 2.5 | V | Threshold voltage required for MOSFET to turn on|
| On-resistance (4.5V) | RDS(ON) | 6 | mΩ | On-resistance at VGS=4.5V|
| On-resistance (10V) | RDS(ON) | 5 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 85 | A | Continuous drain current|
| Package type| - | TO252 | - | Surface mount package for high power applications|
| Technology type| - | Trench | - | Trench technology for low on-resistance|
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| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 40 | V | Maximum drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate-tolerable voltage range|
| Threshold voltage| Vth | 2.5 | V | Threshold voltage required for MOSFET to turn on|
| On-resistance (4.5V) | RDS(ON) | 6 | mΩ | On-resistance at VGS=4.5V|
| On-resistance (10V) | RDS(ON) | 5 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 85 | A | Continuous drain current|
| Package type| - | TO252 | - | Surface mount package for high power applications|
| Technology type| - | Trench | - | Trench technology for low on-resistance|
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Domain and module applications：
3. **Application fields and module examples**
1. **Power tools and household appliances**
- ME50N04-VB is suitable for motor drive modules in **power tools and household appliances**. Its high current carrying capacity and low conduction loss ensure high efficiency and low heat generation of the motor during startup and operation.
2. **DC-DC converter and voltage regulator module**
- This MOSFET can be used in **DC-DC converter** as a power switch, especially in automotive electronics and communication equipment, to ensure high-efficiency energy conversion and stable output.
3. **UPS and battery management system**
- In **uninterruptible power supply (UPS)** and **battery management system**, ME50N04-VB can be used to control the flow of current, ensure battery charging and discharging efficiency, and extend the battery life.
4. **Automotive Electronic Systems**
- This device is ideal for applications such as **Automotive Control Units (ECUs)** and **Automotive Lighting Systems**, providing reliable power control and protection functions.
5. **Photovoltaic Inverters and Industrial Power Supplies**
- In **Photovoltaic Systems** and **Industrial Power Modules**, the high current carrying capacity of this MOSFET supports high-frequency switching operations, ensuring efficient operation of the system.
The low on-resistance, high current capability and excellent thermal performance of the ME50N04-VB make it an ideal choice for multiple fields such as **Motor Drives, Switching Power Supplies and Automotive Electronics**. Its stability and high performance also ensure excellent performance in demanding industrial applications.
1. **Power tools and household appliances**
- ME50N04-VB is suitable for motor drive modules in **power tools and household appliances**. Its high current carrying capacity and low conduction loss ensure high efficiency and low heat generation of the motor during startup and operation.
2. **DC-DC converter and voltage regulator module**
- This MOSFET can be used in **DC-DC converter** as a power switch, especially in automotive electronics and communication equipment, to ensure high-efficiency energy conversion and stable output.
3. **UPS and battery management system**
- In **uninterruptible power supply (UPS)** and **battery management system**, ME50N04-VB can be used to control the flow of current, ensure battery charging and discharging efficiency, and extend the battery life.
4. **Automotive Electronic Systems**
- This device is ideal for applications such as **Automotive Control Units (ECUs)** and **Automotive Lighting Systems**, providing reliable power control and protection functions.
5. **Photovoltaic Inverters and Industrial Power Supplies**
- In **Photovoltaic Systems** and **Industrial Power Modules**, the high current carrying capacity of this MOSFET supports high-frequency switching operations, ensuring efficient operation of the system.
The low on-resistance, high current capability and excellent thermal performance of the ME50N04-VB make it an ideal choice for multiple fields such as **Motor Drives, Switching Power Supplies and Automotive Electronics**. Its stability and high performance also ensure excellent performance in demanding industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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