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ME4565D4-VB Product details
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1. ME4565D4-VB Product Introduction
ME4565D4-VB is a **Common Drain** N+P channel** MOSFET in **TO252-4L package**, suitable for power management and switching applications requiring high efficiency and high current. Its **maximum drain-source voltage (VDS)** is ±40V, **gate-source voltage (VGS)** range is ±20V, and it has a dual-channel structure, which can work simultaneously under positive and negative voltages, and can be flexibly applied to different power supply schemes. The threshold voltage (Vth) of the device is 1.8V (N channel) and -1.7V (P channel), ensuring low-voltage control. With its **14mΩ (@VGS=4.5V)** and **16mΩ (@VGS=10V)** low on-resistance, ME4565D4-VB provides users with extremely low power consumption and high efficiency, suitable for a variety of high-load application scenarios.
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ME4565D4-VB is a **Common Drain** N+P channel** MOSFET in **TO252-4L package**, suitable for power management and switching applications requiring high efficiency and high current. Its **maximum drain-source voltage (VDS)** is ±40V, **gate-source voltage (VGS)** range is ±20V, and it has a dual-channel structure, which can work simultaneously under positive and negative voltages, and can be flexibly applied to different power supply schemes. The threshold voltage (Vth) of the device is 1.8V (N channel) and -1.7V (P channel), ensuring low-voltage control. With its **14mΩ (@VGS=4.5V)** and **16mΩ (@VGS=10V)** low on-resistance, ME4565D4-VB provides users with extremely low power consumption and high efficiency, suitable for a variety of high-load application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 16/16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
II. ME4565D4-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|----------------------------------------------|
| **Package** | TO252-4L | Four-pin package suitable for compact design|
| **Channel type** | Common Drain | Suitable for efficient power management|
| **VDS** | ±40V | Drain-source voltage, supports positive and negative voltages|
| **VGS** | ±20V | Gate-source voltage range|
| **Vth (threshold voltage)** | 1.8V (N channel) | Minimum gate voltage for N channel MOSFET to turn on|
| | -1.7V (P channel) | Minimum gate voltage for P channel MOSFET to turn on|
| **RDS(ON)** | 14mΩ (@VGS=4.5V) | N-channel on-resistance at 4.5V gate drive voltage|
| | 14mΩ (@VGS=4.5V) | P-channel on-resistance at 4.5V gate drive voltage|
| | 16mΩ (@VGS=10V) | N-channel on-resistance at 10V gate drive voltage|
| | 16mΩ (@VGS=10V) | P-channel on-resistance at 10V gate drive voltage|
| **ID (Maximum Drain Current)** | ±50A | Maximum continuous current under specified conditions|
| **Technology** | Trench | Low on-resistance and fast switching speed|
| **Application temperature range** | -55°C ~ 150°C | Suitable for various industrial and consumer applications|
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|----------------------------------------------|
| **Package** | TO252-4L | Four-pin package suitable for compact design|
| **Channel type** | Common Drain | Suitable for efficient power management|
| **VDS** | ±40V | Drain-source voltage, supports positive and negative voltages|
| **VGS** | ±20V | Gate-source voltage range|
| **Vth (threshold voltage)** | 1.8V (N channel) | Minimum gate voltage for N channel MOSFET to turn on|
| | -1.7V (P channel) | Minimum gate voltage for P channel MOSFET to turn on|
| **RDS(ON)** | 14mΩ (@VGS=4.5V) | N-channel on-resistance at 4.5V gate drive voltage|
| | 14mΩ (@VGS=4.5V) | P-channel on-resistance at 4.5V gate drive voltage|
| | 16mΩ (@VGS=10V) | N-channel on-resistance at 10V gate drive voltage|
| | 16mΩ (@VGS=10V) | P-channel on-resistance at 10V gate drive voltage|
| **ID (Maximum Drain Current)** | ±50A | Maximum continuous current under specified conditions|
| **Technology** | Trench | Low on-resistance and fast switching speed|
| **Application temperature range** | -55°C ~ 150°C | Suitable for various industrial and consumer applications|
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Domain and module applications：
III. ME4565D4-VB Application Fields and Module Examples
1. **DC-DC Converter**
ME4565D4-VB is very suitable for use as a switch in a DC-DC converter, providing efficient power conversion, especially in positive and negative power supply design, which can effectively improve the efficiency of the system.
2. **Battery Management System (BMS)**
In the battery management system, this MOSFET can be used to control the charging and discharging process of the battery, achieve precise battery management, and ensure safety and long life.
3. **Electric and Hybrid Vehicles**
This device can be used for power distribution and motor control in electric and hybrid vehicles to improve the efficiency and reliability of the drive system.
4. **High-power LED Driver**
In high-power LED lighting applications, ME4565D4-VB can be used as a driver switch to control the brightness and switching of LEDs and improve the performance of the lighting system.
5. **Consumer Electronics**
In consumer electronics such as smartphones and tablets, ME4565D4-VB can be used in power management modules to ensure the stability and efficiency of the device under different working conditions.
With its excellent electrical performance and versatility, ME4565D4-VB has become an indispensable component in modern electronic devices and is suitable for a variety of high-load and high-efficiency application scenarios.
1. **DC-DC Converter**
ME4565D4-VB is very suitable for use as a switch in a DC-DC converter, providing efficient power conversion, especially in positive and negative power supply design, which can effectively improve the efficiency of the system.
2. **Battery Management System (BMS)**
In the battery management system, this MOSFET can be used to control the charging and discharging process of the battery, achieve precise battery management, and ensure safety and long life.
3. **Electric and Hybrid Vehicles**
This device can be used for power distribution and motor control in electric and hybrid vehicles to improve the efficiency and reliability of the drive system.
4. **High-power LED Driver**
In high-power LED lighting applications, ME4565D4-VB can be used as a driver switch to control the brightness and switching of LEDs and improve the performance of the lighting system.
5. **Consumer Electronics**
In consumer electronics such as smartphones and tablets, ME4565D4-VB can be used in power management modules to ensure the stability and efficiency of the device under different working conditions.
With its excellent electrical performance and versatility, ME4565D4-VB has become an indispensable component in modern electronic devices and is suitable for a variety of high-load and high-efficiency application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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