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ME4565AD4-VB Product details
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1. ME4565AD4-VB Product Introduction
ME4565AD4-VB is a common drain configuration N/P channel MOSFET in a TO252-4L package with a drain-source voltage (VDS) of ±40V, suitable for use in a bipolar power supply environment. The device has a gate drive voltage (VGS) range of ±20V, providing flexible control options. The turn-on voltage (Vth) is 1.8V (N channel) and -1.7V (P channel), making it suitable for low voltage drive applications. At a VGS of 4.5V, the on-resistance (RDS(ON)) is 14mΩ (N channel) and 14mΩ (P channel), respectively, and at a VGS of 10V, it is 16mΩ. The maximum drain current (ID) is ±50A, capable of handling larger load currents. ME4565AD4-VB adopts **Trench technology** to optimize switching performance and power loss, suitable for a variety of high-efficiency power management and signal processing applications.
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ME4565AD4-VB is a common drain configuration N/P channel MOSFET in a TO252-4L package with a drain-source voltage (VDS) of ±40V, suitable for use in a bipolar power supply environment. The device has a gate drive voltage (VGS) range of ±20V, providing flexible control options. The turn-on voltage (Vth) is 1.8V (N channel) and -1.7V (P channel), making it suitable for low voltage drive applications. At a VGS of 4.5V, the on-resistance (RDS(ON)) is 14mΩ (N channel) and 14mΩ (P channel), respectively, and at a VGS of 10V, it is 16mΩ. The maximum drain current (ID) is ±50A, capable of handling larger load currents. ME4565AD4-VB adopts **Trench technology** to optimize switching performance and power loss, suitable for a variety of high-efficiency power management and signal processing applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 16/16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
2. ME4565AD4-VB Detailed Parameter Description
| **Parameter** | **Specification** | **Description** |
|------------------------|-----------------------------|----------------------------------------------|
| **Package Type** | TO252-4L | Four-pin package for easy circuit design and layout|
| **Configuration** | Common drain N/P channel | Supports bipolar power supply applications|
| **Drain-source voltage (VDS)** | ±40V | Can work in positive and negative power supply voltage environments|
| **Gate voltage (VGS)** | ±20V | Provides flexible gate control options|
| **Turning voltage (Vth)** | 1.8V (N channel) | Optimized for low voltage drive|
| | -1.7V (P channel) | Corresponding turning voltage of P channel|
| **On-resistance (RDS(ON))** | 14mΩ @ VGS = 4.5V (N-channel) | Low on-resistance, reduced conduction loss|
| | 14mΩ @ VGS = 4.5V (P-channel) | |
| | 16mΩ @ VGS = 10V (N-channel) | Improved switching efficiency|
| | 16mΩ @ VGS = 10V (P-channel) | |
| **Maximum drain current (ID)** | ±50A | Supports high current load|
| **Technology** | Trench | Trench technology optimized for high efficiency and high frequency performance|
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| **Parameter** | **Specification** | **Description** |
|------------------------|-----------------------------|----------------------------------------------|
| **Package Type** | TO252-4L | Four-pin package for easy circuit design and layout|
| **Configuration** | Common drain N/P channel | Supports bipolar power supply applications|
| **Drain-source voltage (VDS)** | ±40V | Can work in positive and negative power supply voltage environments|
| **Gate voltage (VGS)** | ±20V | Provides flexible gate control options|
| **Turning voltage (Vth)** | 1.8V (N channel) | Optimized for low voltage drive|
| | -1.7V (P channel) | Corresponding turning voltage of P channel|
| **On-resistance (RDS(ON))** | 14mΩ @ VGS = 4.5V (N-channel) | Low on-resistance, reduced conduction loss|
| | 14mΩ @ VGS = 4.5V (P-channel) | |
| | 16mΩ @ VGS = 10V (N-channel) | Improved switching efficiency|
| | 16mΩ @ VGS = 10V (P-channel) | |
| **Maximum drain current (ID)** | ±50A | Supports high current load|
| **Technology** | Trench | Trench technology optimized for high efficiency and high frequency performance|
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Domain and module applications：
III. Application fields and module examples
1. **Power management system**
- ME4565AD4-VB is suitable for **power management systems**, such as **DC-DC converters** and **battery chargers**. Its low on-resistance and high current carrying capacity ensure efficient performance and reduce energy loss during power conversion.
2. **Electric vehicles**
- This MOSFET plays an important role in the **motor drive and energy recovery system** of **electric vehicles**. It can effectively control the drive current of the motor, improve energy utilization efficiency, and realize intelligent control.
3. **Industrial automation**
- In **industrial automation equipment**, ME4565AD4-VB can be used as a **power switch** and **load controller**, supporting efficient switch control to ensure stable operation of the equipment under high load conditions.
4. **Consumer Electronics**
- This device can be used in **consumer electronics**, such as **smart home devices** and **wearable devices**. Its small package and low power consumption make it suitable for applications with strict requirements on size and energy efficiency.
5. **LED Driver**
- ME4565AD4-VB is suitable for **LED drive circuits**, which can efficiently control the current of LEDs and provide stable light output. It is suitable for various lighting applications, such as home, commercial and automotive lighting.
With its excellent electrical performance and flexible configuration, ME4565AD4-VB is suitable for a variety of high-efficiency power supplies and drive systems, and is an indispensable and important device in modern electronic design.
1. **Power management system**
- ME4565AD4-VB is suitable for **power management systems**, such as **DC-DC converters** and **battery chargers**. Its low on-resistance and high current carrying capacity ensure efficient performance and reduce energy loss during power conversion.
2. **Electric vehicles**
- This MOSFET plays an important role in the **motor drive and energy recovery system** of **electric vehicles**. It can effectively control the drive current of the motor, improve energy utilization efficiency, and realize intelligent control.
3. **Industrial automation**
- In **industrial automation equipment**, ME4565AD4-VB can be used as a **power switch** and **load controller**, supporting efficient switch control to ensure stable operation of the equipment under high load conditions.
4. **Consumer Electronics**
- This device can be used in **consumer electronics**, such as **smart home devices** and **wearable devices**. Its small package and low power consumption make it suitable for applications with strict requirements on size and energy efficiency.
5. **LED Driver**
- ME4565AD4-VB is suitable for **LED drive circuits**, which can efficiently control the current of LEDs and provide stable light output. It is suitable for various lighting applications, such as home, commercial and automotive lighting.
With its excellent electrical performance and flexible configuration, ME4565AD4-VB is suitable for a variety of high-efficiency power supplies and drive systems, and is an indispensable and important device in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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