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ME4563D4-VB Product details
Back to previous pageProduct introduction：
1. **ME4563D4-VB Product Introduction**
ME4563D4-VB is a high-performance **single N-channel MOSFET**, using **TO252 package**, designed for medium-high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of **40V** and a gate-source voltage (VGS) range of ±20V, suitable for various power supplies and control circuits. The threshold voltage (Vth) is **2.5V**, which can achieve switching operation at a lower gate voltage and improve switching efficiency. The on-resistance of ME4563D4-VB at VGS of 4.5V and 10V is **14mΩ** and **12mΩ** respectively, which makes it perform well in high-current applications, and the maximum continuous drain current can reach **55A**. Using **Trench technology**, this MOSFET not only has low power consumption characteristics, but also has good thermal performance, suitable for operation in high-frequency and high-power environments.
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ME4563D4-VB is a high-performance **single N-channel MOSFET**, using **TO252 package**, designed for medium-high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of **40V** and a gate-source voltage (VGS) range of ±20V, suitable for various power supplies and control circuits. The threshold voltage (Vth) is **2.5V**, which can achieve switching operation at a lower gate voltage and improve switching efficiency. The on-resistance of ME4563D4-VB at VGS of 4.5V and 10V is **14mΩ** and **12mΩ** respectively, which makes it perform well in high-current applications, and the maximum continuous drain current can reach **55A**. Using **Trench technology**, this MOSFET not only has low power consumption characteristics, but also has good thermal performance, suitable for operation in high-frequency and high-power environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. **Detailed parameter description**
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 40 | V | Maximum withstand drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate withstand voltage range|
| Threshold voltage| Vth | 2.5 | V | Threshold voltage required for MOSFET to turn on|
| On-resistance (4.5V) | RDS(ON) | 14 | mΩ | On-resistance at VGS=4.5V|
| On-resistance (10V) | RDS(ON) | 12 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 55 | A | Maximum continuous drain current|
| Package type| - | TO252 | - | Compact design for high power applications|
| Technology type| - | Trench | - | Low on-resistance, high density trench technology|
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| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 40 | V | Maximum withstand drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate withstand voltage range|
| Threshold voltage| Vth | 2.5 | V | Threshold voltage required for MOSFET to turn on|
| On-resistance (4.5V) | RDS(ON) | 14 | mΩ | On-resistance at VGS=4.5V|
| On-resistance (10V) | RDS(ON) | 12 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 55 | A | Maximum continuous drain current|
| Package type| - | TO252 | - | Compact design for high power applications|
| Technology type| - | Trench | - | Low on-resistance, high density trench technology|
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Domain and module applications：
III. **Application fields and module examples**
1. **Power management and converter**
- ME4563D4-VB performs well in **power management systems** and can be used as a switching element in **DC-DC converters** to achieve efficient power conversion and improve the overall efficiency of the system.
2. **Motor drive**
- This MOSFET can be used in **motor drive circuits** to provide stable current output, ensure the reliability and efficiency of the motor under high load conditions, and is widely used in automation equipment and power tools.
3. **LED driver**
- ME4563D4-VB is suitable for **LED driver** to control the current of LED lamps under high efficiency conditions to ensure stable brightness and high energy efficiency of lamps.
4. **High-efficiency charger**
- In the design of **high-efficiency charger**, the device can switch quickly, greatly reduce energy loss, and improve charging efficiency. It is suitable for charging solutions for various portable devices.
The excellent performance of ME4563D4-VB gives it advantages in multiple application fields, especially in environments that require efficient current control and low power consumption, such as power management, LED driving and motor control.
1. **Power management and converter**
- ME4563D4-VB performs well in **power management systems** and can be used as a switching element in **DC-DC converters** to achieve efficient power conversion and improve the overall efficiency of the system.
2. **Motor drive**
- This MOSFET can be used in **motor drive circuits** to provide stable current output, ensure the reliability and efficiency of the motor under high load conditions, and is widely used in automation equipment and power tools.
3. **LED driver**
- ME4563D4-VB is suitable for **LED driver** to control the current of LED lamps under high efficiency conditions to ensure stable brightness and high energy efficiency of lamps.
4. **High-efficiency charger**
- In the design of **high-efficiency charger**, the device can switch quickly, greatly reduce energy loss, and improve charging efficiency. It is suitable for charging solutions for various portable devices.
The excellent performance of ME4563D4-VB gives it advantages in multiple application fields, especially in environments that require efficient current control and low power consumption, such as power management, LED driving and motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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