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ME4502-VB Product details

Product introduction:

1. ME4502-VB Product Introduction
ME4502-VB is a **dual-channel N+P channel MOSFET**, using **SOP8 package**, optimized for multi-function power control and load switching applications. The device integrates N-channel and P-channel MOSFETs in one package, simplifying circuit design and reducing board area. Its **drain-source voltage (VDS)** is ±30V, supporting **10A N-channel current** and **-8A P-channel current**.
With low on-resistance (RDS(ON)) and fast switching speed, ME4502-VB can effectively reduce losses and improve the overall efficiency of the system, making it very suitable for scenarios such as power management, load switching and motor drive.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.8/-1.7V 10/-8A 11/21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.8/-1.7V 10/-8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.8/-1.7V 10/-8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
2. ME4502-VB Detailed parameter description

- **Package type**: SOP8
- **Channel configuration**: Dual-N+P-Channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V / -1.7V
- **On-resistance (RDS(ON))**:
- **N-channel**: 13mΩ @ VGS=4.5V; 11mΩ @ VGS=10V
- **P-channel**: 28mΩ @ VGS=4.5V; 21mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A (N-channel) / -8A (P-channel)
- **Technology**: Trench technology

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Domain and module applications:

III. Application fields and module examples

1. **Power management module (PMIC)**
ME4502-VB can be used in the load switch and voltage regulation module of the power management IC, supporting bipolar switching to effectively manage the distribution and switching operation of power.

2. **Battery management system (BMS)**
In lithium battery packs and mobile power supplies, this MOSFET can be used for charge and discharge control and battery protection functions. The N-channel is used to control the charging path, while the P-channel is used for the discharge path to ensure efficient battery management.

3. **Consumer electronic devices**
Suitable for power switching and standby power control in laptops, smartphones and other portable devices, reducing system power consumption and extending device life.

4. **Motor control and drive**
In motor control applications, ME4502-VB can be used to drive small motors or provide H-bridge configuration, suitable for bidirectional control in smart home devices and robot systems.

5. **LED lighting and display control**
It can be used for PWM dimming and current switching in the driving circuit of LED lamps or displays to improve the stability and energy efficiency of the light source.

6. **Industrial control system**
Suitable for bidirectional load switching in PLC modules or other industrial systems, supporting current flow in different directions for flexible control.

The integrated dual-channel design of ME4502-VB makes it an ideal choice for power management and load switching. In space-constrained applications that require high efficiency, this MOSFET provides a simplified design solution and improves overall performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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