Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
|
18mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
2. ME4435-VB MOSFET Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------------|----------------------------------------------|
| **Package type** | SOP8 | Small package, suitable for dense circuit design and improved heat dissipation performance|
| **MOSFET type** | Single-P-Channel | Suitable for voltage control in high-side switch applications|
| **Drain-source voltage (V\_DS)** | -30V | Maximum tolerable drain-source voltage|
| **Gate-source voltage (V\_GS)** | ±20V | Gate control voltage range to ensure stable operation of MOSFET|
| **Turning voltage (V\_th)** | -1.7V | MOSFET starts to turn on at -1.7V|
| **On-resistance (R\_DS(ON))** | 24mΩ @ V\_GS=4.5V | On-resistance at 4.5V gate-source voltage|
| **On-resistance (R\_DS(ON))** | 18mΩ @ V\_GS=10V | On-resistance at 10V gate-source voltage|
| **Maximum drain current (I\_D)** | -9A | Maximum drain current that can be carried|
| **Technology** | Trench | Improve conductivity and reduce switching losses|
---
Domain and module applications:
III. Application fields and module examples of ME4435-VB
1. **Reverse battery protection circuit**
ME4435-VB is widely used in reverse protection circuits in **battery management systems** (such as laptops, smartphones). When the battery polarity is reversed, this P-channel MOSFET can quickly block the flow of current to prevent device damage. Its low on-resistance (18mΩ @ V\_GS=10V) ensures that power consumption is minimized during normal use, improving the overall battery life.
2. **High-side load switch**
In **DC-DC converters and power modules**, this MOSFET is often used for high-side switches. Due to its **P-channel structure**, the control circuit design can be simplified, making it suitable for circuits where the current direction is controlled, such as LED drive and motor drive control.
3. **Power management in consumer electronic devices**
In consumer electronic products such as **smart home devices, audio systems and smart routers**, ME4435-VB can be used as a switch and power management module. Its **SOP8 small package** is suitable for dense PCB board design, ensuring efficient heat dissipation and miniaturization requirements of the circuit.
4. **Industrial control and load management**
In **industrial automation** and load control systems, this MOSFET can efficiently control load switches, especially for application scenarios that require fast response. Its -9A current capability makes it widely used in various industrial modules such as motor and sensor control circuits.
Through the above application areas, ME4435-VB demonstrates its important value in battery protection, high-side switching and power management, and is an ideal choice for various efficient power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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