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ME3981-VB Product details
Back to previous pageProduct introduction：
1. ME3981-VB Product Introduction
ME3981-VB is a high-efficiency dual P-channel MOSFET in **SOT23-6 package**, developed for compact design. Its maximum drain-source voltage (VDS) is -20V and the maximum drain current (ID) is -4A. This device combines **Trench technology** to provide low on-resistance and optimize power loss, suitable for applications requiring high performance and reliability. ME3981-VB is particularly suitable for power management, load switching and other fields, and can effectively control power and improve overall system efficiency.
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ME3981-VB is a high-efficiency dual P-channel MOSFET in **SOT23-6 package**, developed for compact design. Its maximum drain-source voltage (VDS) is -20V and the maximum drain current (ID) is -4A. This device combines **Trench technology** to provide low on-resistance and optimize power loss, suitable for applications requiring high performance and reliability. ME3981-VB is particularly suitable for power management, load switching and other fields, and can effectively control power and improve overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
2. ME3981-VB Detailed parameter description
- **Package type**: SOT23-6
- **Channel configuration**: Dual P-channel (Dual-P+P-Channel)
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench technology
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- **Package type**: SOT23-6
- **Channel configuration**: Dual P-channel (Dual-P+P-Channel)
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench technology
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Domain and module applications：
III. Applications and Module Examples
1. **Portable Electronic Devices**
The small package and dual-channel design of ME3981-VB make it an ideal choice for portable electronic devices (such as smartphones, tablets, etc.), enabling efficient power management and helping to extend battery life.
2. **Load Switch**
This MOSFET can be used in load switch applications to control the connection and disconnection of power. This is particularly important for home appliances, lighting systems and other fields, which can effectively reduce power consumption and improve the reliability of equipment.
3. **Power Management Module**
ME3981-VB performs well in DC-DC converters and power management modules, providing efficient switching functions to ensure stable power output and optimize the power consumption of the system.
4. **Battery Management System**
In the battery management system, ME3981-VB can monitor and control the charging and discharging process of the battery to ensure the safety and efficiency of the battery, especially for electric vehicles and energy storage systems.
5. **Audio equipment**
This MOSFET is also suitable for use in audio equipment. As a switching element to control the transmission of audio signals, it can ensure high fidelity and low distortion of audio signals and provide a high-quality listening experience.
The dual P-channel characteristics, low on-resistance and compact package of ME3981-VB make it perform well in various high-performance and compact design applications, and it is a key component in modern electronic design.
1. **Portable Electronic Devices**
The small package and dual-channel design of ME3981-VB make it an ideal choice for portable electronic devices (such as smartphones, tablets, etc.), enabling efficient power management and helping to extend battery life.
2. **Load Switch**
This MOSFET can be used in load switch applications to control the connection and disconnection of power. This is particularly important for home appliances, lighting systems and other fields, which can effectively reduce power consumption and improve the reliability of equipment.
3. **Power Management Module**
ME3981-VB performs well in DC-DC converters and power management modules, providing efficient switching functions to ensure stable power output and optimize the power consumption of the system.
4. **Battery Management System**
In the battery management system, ME3981-VB can monitor and control the charging and discharging process of the battery to ensure the safety and efficiency of the battery, especially for electric vehicles and energy storage systems.
5. **Audio equipment**
This MOSFET is also suitable for use in audio equipment. As a switching element to control the transmission of audio signals, it can ensure high fidelity and low distortion of audio signals and provide a high-quality listening experience.
The dual P-channel characteristics, low on-resistance and compact package of ME3981-VB make it perform well in various high-performance and compact design applications, and it is a key component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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