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ME3902-VB Product details

Product introduction:

1. ME3902-VB Product Introduction: ME3902-VB is a **dual N-channel MOSFET** in a **SOT23-6 package**, designed for efficient power management and switching applications. The maximum drain-source voltage \(V_{DS}\) of this device is 20V, and the rated range of the gate-source voltage \(V_{GS}\) is ±12V, which is suitable for a variety of low-voltage power applications. Its threshold voltage \(V_{th}\) ranges from 0.5V to 1.5V, which means that it can be effectively turned on at a lower gate voltage. The on-resistance \(R_{DS(ON)}\) of ME3902-VB is 28mΩ and 22mΩ at gate voltages of 2.5V and 4.5V, respectively, showing excellent conductive performance. The maximum drain current \(I_D\) is 6A, which is suitable for applications with a variety of current loads. The use of **Trench technology** enables the MOSFET to have lower switching losses and efficient thermal management performance when switching.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Dual-N+N 20V 0.5~1.5V 6A 28mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Dual-N+N 20V 0.5~1.5V 6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Dual-N+N 20V 0.5~1.5V 6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Dual-N+N
2. ME3902-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------|-----------------------------|-------------------------------------|
| **Package type** | SOT23-6 | Small surface mount package, suitable for high-density circuit design|
| **Channel type** | Dual N-channel | With electrons as carriers, suitable for low-voltage applications|
| **Drain-source voltage\(V_{DS}\)** | 20V | Maximum withstand voltage, suitable for low-voltage power supply system|
| **Gate-source voltage\(V_{GS}\)** | ±12V | Allowable gate voltage range to avoid gate damage|
| **Threshold voltage\(V_{th}\)** | 0.5 ~ 1.5V | Minimum voltage required for gate turn-on|
| **On-resistance\(R_{DS(ON)}\)** | 28mΩ @ V_{GS}=2.5V | Low on-state resistance|
| **On-state resistance\(R_{DS(ON)}\)** | 22mΩ @ V_{GS}=4.5V | Low on-state resistance|
| **Maximum drain current\(I_D\)** | 6A | Maximum continuous drain current, determines current carrying capacity|
| **Technology type** | Trench | Advanced trench technology for improved conductivity and switching performance|
| **Operating temperature range** | -55°C ~ 150°C | Supports a variety of environmental conditions|

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Domain and module applications:

III. Application fields and module examples

1. **Power management circuit**
- ME3902-VB is commonly used in power management circuits, such as DC-DC converters and linear regulators, to provide efficient switching solutions and ensure the stability and reliability of the system under different load conditions.

2. **Portable devices**
- In mobile devices and portable electronic products, this MOSFET can be used for power switch management to achieve efficient battery power supply and extend the use time of the device.

3. **LED drive circuit**
- Suitable for LED lighting and display backlight modules, ME3902-VB can be used as a switching element to achieve efficient brightness adjustment and energy saving effects, ensuring the efficient operation of the lighting system.

4. **Motor control**
- In small motor drive circuits, this MOSFET can be used for efficient motor control, providing fast start-stop and speed regulation capabilities, and is widely used in power tools and household appliances.

5. **Industrial Control Systems**
- ME3902-VB can be used in control systems in industrial automation as a switching element to control various sensors and actuators, supporting efficient data acquisition and control functions.

ME3902-VB is an excellent dual N-channel MOSFET suitable for a variety of power management and switching applications, providing a reliable solution for design engineers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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