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ME35N10A-G-VB Product details
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1. ME35N10A-G-VB MOSFET Product Introduction
ME35N10A-G-VB is a **single N-channel field effect transistor (MOSFET)** in **TO-252 package**, with **100V drain-source voltage (V\_DS)** and **±20V gate-source voltage (V\_GS)**, manufactured using **Trench technology**. This MOSFET is widely used for its excellent current carrying capacity and low on-resistance, and is suitable for efficient power management and motor control systems.
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ME35N10A-G-VB is a **single N-channel field effect transistor (MOSFET)** in **TO-252 package**, with **100V drain-source voltage (V\_DS)** and **±20V gate-source voltage (V\_GS)**, manufactured using **Trench technology**. This MOSFET is widely used for its excellent current carrying capacity and low on-resistance, and is suitable for efficient power management and motor control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. ME35N10A-G-VB MOSFET Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------------|------------------------------------------------|
| **Package type** | TO-252 | Provides good heat dissipation performance, suitable for high power applications|
| **MOSFET type** | Single-N-Channel | Suitable for various switching and control applications|
| **Drain-source voltage (V\_DS)** | 100V | Maximum tolerable drain-source voltage|
| **Gate-source voltage (V\_GS)** | ±20V | Maximum gate control voltage to ensure stable operation of the device|
| **Turning on voltage (V\_th)** | 1.8V | 1.8V gate voltage is required for the MOSFET to start turning on|
| **On-resistance (R\_DS(ON))** | 35mΩ @ V\_GS=4.5V | On-resistance at 4.5V gate-source voltage|
| **On-resistance (R\_DS(ON))** | 30mΩ @ V\_GS=10V | On-resistance at 10V gate-source voltage|
| **Maximum drain current (I\_D)** | 40A | Maximum current that can be carried under specific operating conditions|
| **Technology** | Trench | Improve conduction capability and reduce switching losses|
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| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------------|------------------------------------------------|
| **Package type** | TO-252 | Provides good heat dissipation performance, suitable for high power applications|
| **MOSFET type** | Single-N-Channel | Suitable for various switching and control applications|
| **Drain-source voltage (V\_DS)** | 100V | Maximum tolerable drain-source voltage|
| **Gate-source voltage (V\_GS)** | ±20V | Maximum gate control voltage to ensure stable operation of the device|
| **Turning on voltage (V\_th)** | 1.8V | 1.8V gate voltage is required for the MOSFET to start turning on|
| **On-resistance (R\_DS(ON))** | 35mΩ @ V\_GS=4.5V | On-resistance at 4.5V gate-source voltage|
| **On-resistance (R\_DS(ON))** | 30mΩ @ V\_GS=10V | On-resistance at 10V gate-source voltage|
| **Maximum drain current (I\_D)** | 40A | Maximum current that can be carried under specific operating conditions|
| **Technology** | Trench | Improve conduction capability and reduce switching losses|
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Domain and module applications：
3. Application fields and module examples of ME35N10A-G-VB
1. **Switching power supply and DC-DC converter**
ME35N10A-G-VB is very suitable for **switching power supply (SMPS)** and **DC-DC converter**. Its high withstand voltage of 100V and low on-resistance (30mΩ @ V\_GS=10V) enable it to achieve high efficiency and reduce energy loss during power conversion, especially in situations where high current output is required.
2. **Motor drive and control**
In **motor control systems**, this MOSFET can be used as a switching element to drive and control the motor. Due to its drain current capability of up to 40A, it is suitable for various motors, including DC motors and stepper motors, and can provide stable current output to ensure efficient operation of the motor.
3. **Battery Management System (BMS)**
ME35N10A-G-VB is also widely used in **Battery Management System** for overcurrent protection and balanced charging of batteries. Its 100V drain-source voltage and good conduction characteristics enable it to handle the charging and discharging process of high-voltage battery packs, ensuring the safety and stability of the system.
4. **Renewable Energy System**
In **solar inverters and wind power generation systems**, ME35N10A-G-VB can be used as an efficient power switch to ensure the lowest energy loss during the conversion process. The high efficiency and reliability of this MOSFET make it an ideal choice for renewable energy applications, promoting the use of green energy.
Through the above application examples, ME35N10A-G-VB demonstrates its excellent performance in **high voltage and high current environments**. It is a very important component in the field of power electronics and is suitable for various power management and control applications.
1. **Switching power supply and DC-DC converter**
ME35N10A-G-VB is very suitable for **switching power supply (SMPS)** and **DC-DC converter**. Its high withstand voltage of 100V and low on-resistance (30mΩ @ V\_GS=10V) enable it to achieve high efficiency and reduce energy loss during power conversion, especially in situations where high current output is required.
2. **Motor drive and control**
In **motor control systems**, this MOSFET can be used as a switching element to drive and control the motor. Due to its drain current capability of up to 40A, it is suitable for various motors, including DC motors and stepper motors, and can provide stable current output to ensure efficient operation of the motor.
3. **Battery Management System (BMS)**
ME35N10A-G-VB is also widely used in **Battery Management System** for overcurrent protection and balanced charging of batteries. Its 100V drain-source voltage and good conduction characteristics enable it to handle the charging and discharging process of high-voltage battery packs, ensuring the safety and stability of the system.
4. **Renewable Energy System**
In **solar inverters and wind power generation systems**, ME35N10A-G-VB can be used as an efficient power switch to ensure the lowest energy loss during the conversion process. The high efficiency and reliability of this MOSFET make it an ideal choice for renewable energy applications, promoting the use of green energy.
Through the above application examples, ME35N10A-G-VB demonstrates its excellent performance in **high voltage and high current environments**. It is a very important component in the field of power electronics and is suitable for various power management and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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