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ME3592-VB Product details
Back to previous pageProduct introduction：
1. ME3592-VB Product Introduction
ME3592-VB is a dual-N+N-Channel MOSFET in a SOT23-6 package, designed for high-efficiency switching and power management applications. Its maximum drain-source voltage (VDS) is 20V, and it operates within a gate-source voltage (VGS) range of ±12V, which can meet the needs of a variety of electronic devices. The device's threshold voltage (Vth) is between 0.5V and 1.5V, ensuring that it can start at a lower voltage. Its on-resistance (RDS(ON)) is 28mΩ and 22mΩ at gate drive voltages of 2.5V and 4.5V, respectively, showing excellent conductive performance. ME3592-VB, which uses Trench technology, has fast switching characteristics and low power consumption, making it ideal for applications that require efficient power management.
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ME3592-VB is a dual-N+N-Channel MOSFET in a SOT23-6 package, designed for high-efficiency switching and power management applications. Its maximum drain-source voltage (VDS) is 20V, and it operates within a gate-source voltage (VGS) range of ±12V, which can meet the needs of a variety of electronic devices. The device's threshold voltage (Vth) is between 0.5V and 1.5V, ensuring that it can start at a lower voltage. Its on-resistance (RDS(ON)) is 28mΩ and 22mΩ at gate drive voltages of 2.5V and 4.5V, respectively, showing excellent conductive performance. ME3592-VB, which uses Trench technology, has fast switching characteristics and low power consumption, making it ideal for applications that require efficient power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
II. ME3592-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|----------------------|------------------------------|--------------------------------------------|
| **Package** | SOT23-6 | Small surface mount package, suitable for circuit design with limited space|
| **Channel Type** | Dual-N+N-Channel | Suitable for parallel or complementary circuits|
| **VDS** | 20V | Drain-source voltage, maximum support 20V |
| **VGS** | ±12V | Gate-source voltage range|
| **Vth (threshold voltage)** | 0.5 ~ 1.5V | Minimum gate voltage required to turn on the MOSFET|
| **RDS(ON)** | 28mΩ (@VGS=2.5V) | On-resistance at 2.5V gate drive voltage|
| | 22mΩ (@VGS=4.5V) | On-resistance at 4.5V gate drive voltage|
| **ID (maximum drain current)**| 6A | Maximum continuous current under specified conditions|
| **Technology** | Trench | Provides lower on-resistance and fast switching capability|
| **Application temperature range** | -55°C ~ 150°C | Suitable for various industrial and consumer electronic environments|
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| **Parameter** | **Value** | **Description** |
|----------------------|------------------------------|--------------------------------------------|
| **Package** | SOT23-6 | Small surface mount package, suitable for circuit design with limited space|
| **Channel Type** | Dual-N+N-Channel | Suitable for parallel or complementary circuits|
| **VDS** | 20V | Drain-source voltage, maximum support 20V |
| **VGS** | ±12V | Gate-source voltage range|
| **Vth (threshold voltage)** | 0.5 ~ 1.5V | Minimum gate voltage required to turn on the MOSFET|
| **RDS(ON)** | 28mΩ (@VGS=2.5V) | On-resistance at 2.5V gate drive voltage|
| | 22mΩ (@VGS=4.5V) | On-resistance at 4.5V gate drive voltage|
| **ID (maximum drain current)**| 6A | Maximum continuous current under specified conditions|
| **Technology** | Trench | Provides lower on-resistance and fast switching capability|
| **Application temperature range** | -55°C ~ 150°C | Suitable for various industrial and consumer electronic environments|
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Domain and module applications：
III. ME3592-VB Application Fields and Module Examples
1. **Power Management Module**
ME3592-VB can be used in power management integrated circuits (PMIC) as a switching element to adjust current and voltage to ensure high efficiency and stability of the system. It is widely used in mobile phones, tablets and laptops.
2. **LED drive circuit**
In LED lighting and display applications, ME3592-VB can effectively control the switching and brightness of LEDs, and is suitable for lighting fixtures, LED displays and backlights.
3. **Portable Devices**
Due to its small package and low power consumption, ME3592-VB is very suitable for power switches in portable electronic devices such as smart watches and fitness trackers to extend battery life.
4. **Motor Drive Control**
This type of MOSFET can be used in small motor drive circuits to control the start and stop and speed of the motor. It is suitable for robots, toys and household appliances.
5. **Automotive electronics**
ME3592-VB can also play an important role in automotive electronics, such as power distribution, control modules and sensor interfaces, helping to improve the energy efficiency and functionality of the car.
With its high performance, low power consumption and wide application adaptability, ME3592-VB is an indispensable and important device in the design of modern electronic products.
1. **Power Management Module**
ME3592-VB can be used in power management integrated circuits (PMIC) as a switching element to adjust current and voltage to ensure high efficiency and stability of the system. It is widely used in mobile phones, tablets and laptops.
2. **LED drive circuit**
In LED lighting and display applications, ME3592-VB can effectively control the switching and brightness of LEDs, and is suitable for lighting fixtures, LED displays and backlights.
3. **Portable Devices**
Due to its small package and low power consumption, ME3592-VB is very suitable for power switches in portable electronic devices such as smart watches and fitness trackers to extend battery life.
4. **Motor Drive Control**
This type of MOSFET can be used in small motor drive circuits to control the start and stop and speed of the motor. It is suitable for robots, toys and household appliances.
5. **Automotive electronics**
ME3592-VB can also play an important role in automotive electronics, such as power distribution, control modules and sensor interfaces, helping to improve the energy efficiency and functionality of the car.
With its high performance, low power consumption and wide application adaptability, ME3592-VB is an indispensable and important device in the design of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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