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ME3589-VB Product details
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1. ME3589-VB Product Introduction
ME3589-VB is a **dual N-channel MOSFET** in **SOT23-6** package, with **20V drain-source voltage (VDS)** and ±12V gate drive voltage (VGS). The device has a **turn-on voltage (Vth) range of 0.5V to 1.5V**, an on-resistance of **28mΩ** @ VGS = 2.5V and **22mΩ** @ VGS = 4.5V, and can handle current efficiently. The **maximum drain current (ID) of ME3589-VB is 6A**, and it is manufactured using **trench technology**, which is suitable for efficient switch control and signal processing, especially in low-power and small electronic devices.
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ME3589-VB is a **dual N-channel MOSFET** in **SOT23-6** package, with **20V drain-source voltage (VDS)** and ±12V gate drive voltage (VGS). The device has a **turn-on voltage (Vth) range of 0.5V to 1.5V**, an on-resistance of **28mΩ** @ VGS = 2.5V and **22mΩ** @ VGS = 4.5V, and can handle current efficiently. The **maximum drain current (ID) of ME3589-VB is 6A**, and it is manufactured using **trench technology**, which is suitable for efficient switch control and signal processing, especially in low-power and small electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
II. ME3589-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|------------------|------------------------------|----------------------------------------------|
| **Package Type** | SOT23-6 | Small surface mount package, suitable for applications with limited space|
| **MOSFET Configuration** | Dual N-channel | Contains two N-type channels for easy circuit design and wiring|
| **Drain-Source Voltage (VDS)** | 20V | Maximum drain-source voltage, suitable for low-voltage power supply applications|
| **Gate Voltage (VGS)** | ±12V | Gate drive voltage range for increased application flexibility|
| **Turning Voltage (Vth)** | 0.5V ~ 1.5V | MOSFET turn-on threshold voltage range|
| **On-resistance (RDS(ON))** | 28mΩ @ VGS = 2.5V | Suitable for low current applications, with lower conduction loss|
| | 22mΩ @ VGS = 4.5V | Improved conduction current capability|
| **Maximum drain current (ID)**| 6A | Supports medium current load applications|
| **Technology** | Trench | Trench technology, reducing conduction loss and switching loss|
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| **Parameter** | **Value** | **Description** |
|------------------|------------------------------|----------------------------------------------|
| **Package Type** | SOT23-6 | Small surface mount package, suitable for applications with limited space|
| **MOSFET Configuration** | Dual N-channel | Contains two N-type channels for easy circuit design and wiring|
| **Drain-Source Voltage (VDS)** | 20V | Maximum drain-source voltage, suitable for low-voltage power supply applications|
| **Gate Voltage (VGS)** | ±12V | Gate drive voltage range for increased application flexibility|
| **Turning Voltage (Vth)** | 0.5V ~ 1.5V | MOSFET turn-on threshold voltage range|
| **On-resistance (RDS(ON))** | 28mΩ @ VGS = 2.5V | Suitable for low current applications, with lower conduction loss|
| | 22mΩ @ VGS = 4.5V | Improved conduction current capability|
| **Maximum drain current (ID)**| 6A | Supports medium current load applications|
| **Technology** | Trench | Trench technology, reducing conduction loss and switching loss|
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Domain and module applications：
III. Application fields and module examples
1. **Power management**
- ME3589-VB is suitable for **power management modules**, especially in low voltage and medium current applications, it can be used as a switching element to achieve efficient power conversion and power distribution, ensuring the stability and efficiency of the system.
2. **Signal switch**
- This MOSFET can be used in **signal switch** applications, such as in digital circuits or logic circuits, as a switching element to control the flow of signals to meet the needs of signal control.
3. **LED drive**
- ME3589-VB performs well in **LED drive circuits** and can be used as a switch to control LEDs. It is suitable for various lighting applications to ensure stable brightness output and energy efficiency.
4. **Small battery-powered devices**
- Due to its low power consumption, ME3589-VB is very suitable for **small battery-powered devices**, such as portable electronic devices and wireless sensors, which can effectively extend battery life.
5. **Consumer Electronics**
- In the **Consumer Electronics** field, ME3589-VB can be applied to various power management and switch control solutions, such as smart home devices and personal electronic products, to provide efficient power management solutions.
ME3589-VB is a high-performance dual N-channel MOSFET. With its excellent electrical characteristics and compact package, it is widely used in power management, signal switching, low-power electronic devices and other fields to meet the performance and power consumption requirements of modern electronic products.
1. **Power management**
- ME3589-VB is suitable for **power management modules**, especially in low voltage and medium current applications, it can be used as a switching element to achieve efficient power conversion and power distribution, ensuring the stability and efficiency of the system.
2. **Signal switch**
- This MOSFET can be used in **signal switch** applications, such as in digital circuits or logic circuits, as a switching element to control the flow of signals to meet the needs of signal control.
3. **LED drive**
- ME3589-VB performs well in **LED drive circuits** and can be used as a switch to control LEDs. It is suitable for various lighting applications to ensure stable brightness output and energy efficiency.
4. **Small battery-powered devices**
- Due to its low power consumption, ME3589-VB is very suitable for **small battery-powered devices**, such as portable electronic devices and wireless sensors, which can effectively extend battery life.
5. **Consumer Electronics**
- In the **Consumer Electronics** field, ME3589-VB can be applied to various power management and switch control solutions, such as smart home devices and personal electronic products, to provide efficient power management solutions.
ME3589-VB is a high-performance dual N-channel MOSFET. With its excellent electrical characteristics and compact package, it is widely used in power management, signal switching, low-power electronic devices and other fields to meet the performance and power consumption requirements of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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