ME3587-VB Product details
Product introduction:
ME3587-VB is a high-performance dual N-channel MOSFET in a **SOT23-6** package, designed for low-voltage, high-efficiency power management and switching applications. The device has a maximum drain-source voltage (VDS) of **20V**, combined with a gate-source voltage (VGS) of ±12V, providing good operating flexibility. The threshold voltage range is **0.5V to 1.5V**, which can be turned on smoothly at a lower gate-source voltage and adapt to various low-voltage control environments. Its on-resistance is **28mΩ** and **22mΩ** at VGS of 2.5V and 4.5V respectively, which enables ME3587-VB to provide a continuous drain current of up to **6A** while maintaining low power consumption. The design using **Trench technology** enhances the efficiency and thermal stability of the device, making it suitable for high-frequency and high-efficiency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 20 | V | Maximum withstand drain-source voltage|
| Gate-source voltage| VGS | ±12 | V | Gate withstand voltage range|
| Threshold voltage| Vth | 0.5~1.5 | V | Threshold voltage required for MOSFET to turn on|
| On-resistance (2.5V) | RDS(ON) | 28 | mΩ | On-resistance when VGS=2.5V|
| On-resistance (4.5V) | RDS(ON) | 22 | mΩ | On-resistance when VGS=4.5V|
| Maximum drain current| ID | 6 | A | Maximum continuous drain current|
| Package type| - | SOT23-6 | - | Compact package, suitable for small circuit design|
| Technology type| - | Trench | - | Low on-resistance, high-density trench technology|
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Domain and module applications:
1. **Consumer electronics: smartphones and portable devices**
- ME3587-VB is very suitable for power management of **smartphones and their accessories**, and its low on-resistance and low power consumption can improve the endurance of the device.
2. **Switching power supply and DC-DC converter**
- In **switching power supply and DC-DC converter**, it can be used as the main switching element to provide efficient power conversion, especially for low voltage applications.
3. **LED lighting control**
- This device is suitable for **LED lighting control system**, which can effectively manage the driving current of LED, improve brightness and reduce energy consumption.
4. **Automotive electronics: power distribution and management**
- In **automotive electronic systems**, it is used for power distribution and management modules to ensure stability and reliability under high load conditions.
ME3587-VB demonstrates excellent performance in multiple areas, especially suitable for power management and switch control in low voltage and high frequency applications.
Technical support:
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