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ME3481-VB Product details
Back to previous pageProduct introduction：
1. ME3481-VB Product Introduction
ME3481-VB is a high-performance single P-channel MOSFET in **SOT23-6 package**, designed for space-limited applications. This MOSFET has a maximum drain-source voltage (VDS) of -30V and supports a drain current (ID) of up to -4.8A. Thanks to its **Trench technology**, ME3481-VB provides a lower on-resistance, ensuring excellent performance under high frequency and high power conditions, and is very suitable for various power switching and management applications.
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ME3481-VB is a high-performance single P-channel MOSFET in **SOT23-6 package**, designed for space-limited applications. This MOSFET has a maximum drain-source voltage (VDS) of -30V and supports a drain current (ID) of up to -4.8A. Thanks to its **Trench technology**, ME3481-VB provides a lower on-resistance, ensuring excellent performance under high frequency and high power conditions, and is very suitable for various power switching and management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
2. ME3481-VB Detailed parameter description
- **Package type**: SOT23-6
- **Channel configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
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- **Package type**: SOT23-6
- **Channel configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
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Domain and module applications：
III. Applications and Module Examples
1. **Portable Devices**
The small package and low on-resistance of ME3481-VB make it an ideal choice for portable devices (such as smartphones, tablets, etc.), which can effectively control power switches, reduce power consumption, and extend battery life.
2. **Power Management**
This MOSFET can be used in power management systems, such as DC-DC converters and power switch modules. In these applications, it can provide high efficiency and reliability to ensure stable power output.
3. **Load Switch**
ME3481-VB can be used as a load switch to connect and disconnect loads through simple control signal switches. It is suitable for various electronic devices such as home appliances, lighting control systems, etc.
4. **Battery Management System**
In the battery management system, ME3481-VB can be used to monitor and control the battery charging and discharging process to ensure safe and efficient management of battery use, especially in electric vehicles and energy storage systems.
5. **Audio equipment**
This MOSFET is also suitable for use in audio equipment. It can be used as a switching element to control the transmission of audio signals, ensuring high fidelity and low distortion of audio signals.
The P-channel characteristics, low on-resistance and compact packaging of ME3481-VB make it perform well in a variety of high-performance and compact design applications, and it is a key component in modern electronic design.
1. **Portable Devices**
The small package and low on-resistance of ME3481-VB make it an ideal choice for portable devices (such as smartphones, tablets, etc.), which can effectively control power switches, reduce power consumption, and extend battery life.
2. **Power Management**
This MOSFET can be used in power management systems, such as DC-DC converters and power switch modules. In these applications, it can provide high efficiency and reliability to ensure stable power output.
3. **Load Switch**
ME3481-VB can be used as a load switch to connect and disconnect loads through simple control signal switches. It is suitable for various electronic devices such as home appliances, lighting control systems, etc.
4. **Battery Management System**
In the battery management system, ME3481-VB can be used to monitor and control the battery charging and discharging process to ensure safe and efficient management of battery use, especially in electric vehicles and energy storage systems.
5. **Audio equipment**
This MOSFET is also suitable for use in audio equipment. It can be used as a switching element to control the transmission of audio signals, ensuring high fidelity and low distortion of audio signals.
The P-channel characteristics, low on-resistance and compact packaging of ME3481-VB make it perform well in a variety of high-performance and compact design applications, and it is a key component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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