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ME3433D-VB Product details
Back to previous pageProduct introduction：
1. ME3433D-VB Product Introduction
ME3433D-VB is a high-performance **single P-channel MOSFET**, using **SOT23-6 package**, designed for low voltage and medium current applications. Its maximum drain-source voltage (VDS) is **-30V**, with **-4.8A continuous drain current (ID)** capability, suitable for a variety of small electronic circuits and power management systems. The on-resistance of this MOSFET is **54mΩ** @VGS=4.5V and **49mΩ** @VGS=10V, using **trench technology**, significantly reducing conduction losses and improving working efficiency. This makes ME3433D-VB an ideal choice for mobile devices, LED driver power supplies and various small electronic applications.
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ME3433D-VB is a high-performance **single P-channel MOSFET**, using **SOT23-6 package**, designed for low voltage and medium current applications. Its maximum drain-source voltage (VDS) is **-30V**, with **-4.8A continuous drain current (ID)** capability, suitable for a variety of small electronic circuits and power management systems. The on-resistance of this MOSFET is **54mΩ** @VGS=4.5V and **49mΩ** @VGS=10V, using **trench technology**, significantly reducing conduction losses and improving working efficiency. This makes ME3433D-VB an ideal choice for mobile devices, LED driver power supplies and various small electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
II. ME3433D-VB Parameter Description
| **Parameter** | **Specification** | **Description** |
|---------------------|---------------------------|------------------------------------------------|
| **Package** | SOT23-6 | Compact package, suitable for high-density circuit board layout|
| **Channel type** | Single P-channel | Suitable for high-side switch and load control applications|
| **VDS (drain-source voltage)** | -30V | Maximum withstand voltage, suitable for low-voltage applications|
| **VGS (gate-source voltage)** | ±20V | Maximum voltage range of gate drive|
| **Vth (threshold voltage)** | -1.7V | Typical turn-on voltage, helps to achieve precise gate control|
| **RDS(ON)@VGS=4.5V**| 54mΩ | Low on-resistance, ensures high efficiency and low power consumption|
| **RDS(ON)@VGS=10V** | 49mΩ | Further reduce on-resistance at higher VGS|
| **ID (drain current)** | -4.8A | Suitable for low and medium power applications, ensuring stable operation|
| **Technology** | Trench | Adopts trench technology to reduce conduction loss and improve thermal performance|
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| **Parameter** | **Specification** | **Description** |
|---------------------|---------------------------|------------------------------------------------|
| **Package** | SOT23-6 | Compact package, suitable for high-density circuit board layout|
| **Channel type** | Single P-channel | Suitable for high-side switch and load control applications|
| **VDS (drain-source voltage)** | -30V | Maximum withstand voltage, suitable for low-voltage applications|
| **VGS (gate-source voltage)** | ±20V | Maximum voltage range of gate drive|
| **Vth (threshold voltage)** | -1.7V | Typical turn-on voltage, helps to achieve precise gate control|
| **RDS(ON)@VGS=4.5V**| 54mΩ | Low on-resistance, ensures high efficiency and low power consumption|
| **RDS(ON)@VGS=10V** | 49mΩ | Further reduce on-resistance at higher VGS|
| **ID (drain current)** | -4.8A | Suitable for low and medium power applications, ensuring stable operation|
| **Technology** | Trench | Adopts trench technology to reduce conduction loss and improve thermal performance|
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Domain and module applications：
III. Applications and module examples of ME3433D-VB
1. **Mobile device power management**
- ME3433D-VB can be used as a high-side switch in power management of mobile devices, suitable for smartphones, tablets and other portable devices. Its low on-resistance helps improve battery efficiency and extend the use time of the device.
2. **LED driver power**
- In LED lighting applications, this MOSFET can be used to regulate the current of the LED, ensuring high brightness output with minimal power consumption. Its fast switching characteristics make it suitable for PWM dimming control, providing stable and adjustable light output.
3. **Small motor control**
- ME3433D-VB can be used as a drive switch for small DC motors, suitable for applications such as robots, toys and small power tools. Its high current capability ensures smooth start-up and operation of the motor.
4. **Power Amplifier and Audio Amplifier**
- In the audio amplifier circuit, this MOSFET can be used as a switching element to provide efficient signal amplification, ensuring high fidelity and output power of the audio signal, suitable for home audio and portable audio systems.
5. **Portable Charger and Battery Management**
- This MOSFET can be used as a switching element in a portable charger to manage the current flow during the charging process, ensuring safe and efficient charging and extending battery life.
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**Summary**: ME3433D-VB is widely used in mobile devices, LED drivers, small motor control and chargers with its moderate voltage and current capabilities, combined with low on-resistance and excellent thermal performance. The SOT23-6 package design makes it easy to integrate on high-density circuit boards, improving the overall reliability and efficiency of the system.
1. **Mobile device power management**
- ME3433D-VB can be used as a high-side switch in power management of mobile devices, suitable for smartphones, tablets and other portable devices. Its low on-resistance helps improve battery efficiency and extend the use time of the device.
2. **LED driver power**
- In LED lighting applications, this MOSFET can be used to regulate the current of the LED, ensuring high brightness output with minimal power consumption. Its fast switching characteristics make it suitable for PWM dimming control, providing stable and adjustable light output.
3. **Small motor control**
- ME3433D-VB can be used as a drive switch for small DC motors, suitable for applications such as robots, toys and small power tools. Its high current capability ensures smooth start-up and operation of the motor.
4. **Power Amplifier and Audio Amplifier**
- In the audio amplifier circuit, this MOSFET can be used as a switching element to provide efficient signal amplification, ensuring high fidelity and output power of the audio signal, suitable for home audio and portable audio systems.
5. **Portable Charger and Battery Management**
- This MOSFET can be used as a switching element in a portable charger to manage the current flow during the charging process, ensuring safe and efficient charging and extending battery life.
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**Summary**: ME3433D-VB is widely used in mobile devices, LED drivers, small motor control and chargers with its moderate voltage and current capabilities, combined with low on-resistance and excellent thermal performance. The SOT23-6 package design makes it easy to integrate on high-density circuit boards, improving the overall reliability and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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