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ME30N10-G-VB Product details
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1. ME30N10-G-VB Product Introduction
ME30N10-G-VB is a high-efficiency **single N-channel MOSFET**, packaged in **TO-252**, designed for medium and high current applications. Its maximum drain-source voltage (VDS) is **100V**, suitable for switching and power management in high voltage environments. The gate-source voltage (VGS) of the device can reach ±20V, and the threshold voltage (Vth) is **1.8V**, which allows it to be turned on at a lower gate voltage. ME30N10-G-VB uses **Trench (trench type) technology**, with an on-resistance (RDS(ON)) of **35mΩ** when VGS is 4.5V and **30mΩ** when VGS is 10V. It can carry a maximum continuous current (ID) of **40A**, ensuring high efficiency and low power consumption, suitable for a variety of application scenarios.
ME30N10-G-VB is a high-efficiency **single N-channel MOSFET**, packaged in **TO-252**, designed for medium and high current applications. Its maximum drain-source voltage (VDS) is **100V**, suitable for switching and power management in high voltage environments. The gate-source voltage (VGS) of the device can reach ±20V, and the threshold voltage (Vth) is **1.8V**, which allows it to be turned on at a lower gate voltage. ME30N10-G-VB uses **Trench (trench type) technology**, with an on-resistance (RDS(ON)) of **35mΩ** when VGS is 4.5V and **30mΩ** when VGS is 10V. It can carry a maximum continuous current (ID) of **40A**, ensuring high efficiency and low power consumption, suitable for a variety of application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. ME30N10-G-VB Detailed Parameter Description
| **Parameter Name** | **Value** | **Unit** | **Description** |
|---------------------|-------------------|-----------|------------------------------------------|
| **Package Type** | TO-252 | - | Surface mount package, suitable for high-density PCB design|
| **Channel Configuration** | Single N-channel| - | Suitable for switching and power management applications|
| **Maximum Drain-Source Voltage (VDS)** | 100 | V | Maximum Withstandable Drain-Source Voltage|
| **Maximum Gate-Source Voltage (VGS)** | ±20 | V | Safe Operating Range of Gate-Source Voltage|
| **Threshold Voltage (Vth)** | 1.8 | V | Minimum Gate Voltage at Which the Device Begins to Turn On|
| **On-Resistance (RDS(ON))** | 35 | mΩ | VGS=4.5V |
| **On-resistance (RDS(ON))** | 30 | mΩ | On-resistance at VGS=10V|
| **Maximum continuous current (ID)** | 40 | A | Maximum continuous drain current|
| **Technology type** | Trench | - | Trench technology, increasing current density and reducing on-resistance|
| **Operating temperature range** | -55 ~ 150 | ℃ | Safe operating temperature range of the device|
| **Mounting method** | Surface mount| - | Convenient for automated production and miniaturized PCB design|
| **Parameter Name** | **Value** | **Unit** | **Description** |
|---------------------|-------------------|-----------|------------------------------------------|
| **Package Type** | TO-252 | - | Surface mount package, suitable for high-density PCB design|
| **Channel Configuration** | Single N-channel| - | Suitable for switching and power management applications|
| **Maximum Drain-Source Voltage (VDS)** | 100 | V | Maximum Withstandable Drain-Source Voltage|
| **Maximum Gate-Source Voltage (VGS)** | ±20 | V | Safe Operating Range of Gate-Source Voltage|
| **Threshold Voltage (Vth)** | 1.8 | V | Minimum Gate Voltage at Which the Device Begins to Turn On|
| **On-Resistance (RDS(ON))** | 35 | mΩ | VGS=4.5V |
| **On-resistance (RDS(ON))** | 30 | mΩ | On-resistance at VGS=10V|
| **Maximum continuous current (ID)** | 40 | A | Maximum continuous drain current|
| **Technology type** | Trench | - | Trench technology, increasing current density and reducing on-resistance|
| **Operating temperature range** | -55 ~ 150 | ℃ | Safe operating temperature range of the device|
| **Mounting method** | Surface mount| - | Convenient for automated production and miniaturized PCB design|
Domain and module applications：
3. Application fields and module examples
1. **Power management system**
ME30N10-G-VB is suitable for **switching power supply (SMPS)** and **DC-DC converter**. It can switch efficiently at high voltage, suitable for devices such as power adapters and chargers, ensuring good energy efficiency and reliability.
2. **Motor drive**
In motor drive applications, this MOSFET can be used as a switch in **motor control modules**, suitable for fields such as automation equipment and robots, and its high current carrying capacity ensures stable operation of the motor.
3. **Automotive electronics**
ME30N10-G-VB can be widely used in **automotive electronic equipment**, such as power distribution and load switching, handling high voltage and high current scenarios, such as electric windows and seat adjusters.
4. **Consumer Electronics**
In the field of consumer electronics, the device is suitable for **LED drivers** and other small power management applications, ensuring high efficiency and compact design, making it suitable for portable devices and small home appliances.
In short, ME30N10-G-VB is widely used in power management, motor drive, automotive electronics and consumer electronics due to its excellent electrical performance and efficient switching capabilities.
1. **Power management system**
ME30N10-G-VB is suitable for **switching power supply (SMPS)** and **DC-DC converter**. It can switch efficiently at high voltage, suitable for devices such as power adapters and chargers, ensuring good energy efficiency and reliability.
2. **Motor drive**
In motor drive applications, this MOSFET can be used as a switch in **motor control modules**, suitable for fields such as automation equipment and robots, and its high current carrying capacity ensures stable operation of the motor.
3. **Automotive electronics**
ME30N10-G-VB can be widely used in **automotive electronic equipment**, such as power distribution and load switching, handling high voltage and high current scenarios, such as electric windows and seat adjusters.
4. **Consumer Electronics**
In the field of consumer electronics, the device is suitable for **LED drivers** and other small power management applications, ensuring high efficiency and compact design, making it suitable for portable devices and small home appliances.
In short, ME30N10-G-VB is widely used in power management, motor drive, automotive electronics and consumer electronics due to its excellent electrical performance and efficient switching capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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