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ME25N10-VB Product details
Back to previous pageProduct introduction：
1. ME25N10-VB Product Introduction: ME25N10-VB is a **single N-channel MOSFET**, using **TO-252 package**, with excellent electrical performance. The maximum drain voltage \(V_{DS}\) of this device is 100V, and the gate voltage \(V_{GS}\) range is ±20V, which is suitable for a variety of power management applications. The threshold voltage \(V_{th}\) is 1.8V, which means that it can be turned on at a lower gate voltage, improving the switching efficiency. The on-resistance \(R_{DS(ON)}\) of ME25N10-VB is 35mΩ (at a gate voltage of 4.5V) and 30mΩ (at a gate voltage of 10V) at different gate voltages, showing good conductivity, and the maximum drain current \(I_D\) is 40A. This MOSFET adopts **Trench technology**, with the advantages of fast switching and low conduction loss, suitable for high-efficiency circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. ME25N10-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------|-----------------------------|-------------------------------------|
| **Package type** | TO-252 | Surface mount package, excellent heat dissipation performance|
| **Channel type** | Single N-channel | Electrons as carriers, low conduction loss|
| **Drain-source voltage\(V_{DS}\)** | 100V | Maximum withstand voltage, suitable for high voltage power supply applications|
| **Gate-source voltage\(V_{GS}\)** | ±20V | Allowable gate voltage range to avoid gate damage|
| **Threshold voltage\(V_{th}\)** | 1.8V | Minimum voltage required for gate turn-on|
| **On-resistance\(R_{DS(ON)}\)** | 35mΩ @ V_{GS}=4.5V | Low on-state resistance|
| **On-state resistance\(R_{DS(ON)}\)** | 30mΩ @ V_{GS}=10V | Low on-state resistance|
| **Maximum drain current\(I_D\)** | 40A | Maximum continuous drain current, determines current carrying capacity|
| **Technology type** | Trench | Advanced trench technology for improved conductivity and switching performance|
| **Operating temperature range** | -55°C ~ 175°C | Supports industrial and harsh environment applications|
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| **Parameter** | **Value** | **Description** |
|-----------------------|-----------------------------|-------------------------------------|
| **Package type** | TO-252 | Surface mount package, excellent heat dissipation performance|
| **Channel type** | Single N-channel | Electrons as carriers, low conduction loss|
| **Drain-source voltage\(V_{DS}\)** | 100V | Maximum withstand voltage, suitable for high voltage power supply applications|
| **Gate-source voltage\(V_{GS}\)** | ±20V | Allowable gate voltage range to avoid gate damage|
| **Threshold voltage\(V_{th}\)** | 1.8V | Minimum voltage required for gate turn-on|
| **On-resistance\(R_{DS(ON)}\)** | 35mΩ @ V_{GS}=4.5V | Low on-state resistance|
| **On-state resistance\(R_{DS(ON)}\)** | 30mΩ @ V_{GS}=10V | Low on-state resistance|
| **Maximum drain current\(I_D\)** | 40A | Maximum continuous drain current, determines current carrying capacity|
| **Technology type** | Trench | Advanced trench technology for improved conductivity and switching performance|
| **Operating temperature range** | -55°C ~ 175°C | Supports industrial and harsh environment applications|
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Domain and module applications：
III. Application fields and module examples
1. **Power management module**
- ME25N10-VB can be applied to power management modules such as AC-DC converters and DC-DC buck converters to provide efficient power switch solutions and ensure the stability and reliability of the system.
2. **Motor drive**
- This MOSFET is suitable for motor control in power tools and household appliances, such as DC motor drive, and can achieve efficient forward and reverse control and dynamic speed regulation to meet different load requirements.
3. **LED drive circuit**
- In LED lighting systems, ME25N10-VB can be used in LED drive circuits to achieve fast switching control, helping to improve LED brightness adjustment and energy saving effects.
4. **Battery management system (BMS)**
- Due to its excellent performance, this MOSFET is suitable for charge and discharge management in battery management systems to ensure safe and reliable battery use and prevent overcharge and overdischarge.
5. **Communication equipment**
- In communication equipment, ME25N10-VB can be used as a switching element to support high-frequency switching operations and improve the signal stability and transmission efficiency of the equipment.
ME25N10-VB is an ideal choice for **efficient power management** and **drive control**. It is widely used in many fields and can provide reliable performance support for different applications.
1. **Power management module**
- ME25N10-VB can be applied to power management modules such as AC-DC converters and DC-DC buck converters to provide efficient power switch solutions and ensure the stability and reliability of the system.
2. **Motor drive**
- This MOSFET is suitable for motor control in power tools and household appliances, such as DC motor drive, and can achieve efficient forward and reverse control and dynamic speed regulation to meet different load requirements.
3. **LED drive circuit**
- In LED lighting systems, ME25N10-VB can be used in LED drive circuits to achieve fast switching control, helping to improve LED brightness adjustment and energy saving effects.
4. **Battery management system (BMS)**
- Due to its excellent performance, this MOSFET is suitable for charge and discharge management in battery management systems to ensure safe and reliable battery use and prevent overcharge and overdischarge.
5. **Communication equipment**
- In communication equipment, ME25N10-VB can be used as a switching element to support high-frequency switching operations and improve the signal stability and transmission efficiency of the equipment.
ME25N10-VB is an ideal choice for **efficient power management** and **drive control**. It is widely used in many fields and can provide reliable performance support for different applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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