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ME16P10-VB Product details
Back to previous pageProduct introduction：
1. ME16P10-VB Product Introduction
ME16P10-VB is a **single-P-Channel** MOSFET in **TO252 package**, designed for high voltage applications. Its maximum **VDS can reach -100V**, and it operates within **VGS voltage range of ±20V**, which can adapt to a variety of power management needs. The **threshold voltage (Vth)** of this product is -2V, and the on-resistance (**RDS(ON)**) is 120mΩ and 100mΩ at gate drive voltages of 4.5V and 10V respectively. It has excellent conductivity and is suitable for various high-efficiency switching circuits. With its **Trench technology**, ME16P10-VB provides lower power consumption and heat loss in load switches and power management modules.
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ME16P10-VB is a **single-P-Channel** MOSFET in **TO252 package**, designed for high voltage applications. Its maximum **VDS can reach -100V**, and it operates within **VGS voltage range of ±20V**, which can adapt to a variety of power management needs. The **threshold voltage (Vth)** of this product is -2V, and the on-resistance (**RDS(ON)**) is 120mΩ and 100mΩ at gate drive voltages of 4.5V and 10V respectively. It has excellent conductivity and is suitable for various high-efficiency switching circuits. With its **Trench technology**, ME16P10-VB provides lower power consumption and heat loss in load switches and power management modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
II. ME16P10-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|----------------------|------------------------------|--------------------------------------------|
| **Package** | TO252 | Surface mount package, suitable for compact circuit design|
| **Channel Type** | Single-P-Channel | Suitable for low-side switch applications|
| **VDS** | -100V | Drain-source voltage, maximum support -100V |
| **VGS** | ±20V | Gate-source voltage range|
| **Vth (threshold voltage)** | -2V | Minimum gate voltage required to turn on the MOSFET|
| **RDS(ON)** | 120mΩ (@VGS=4.5V) | On-resistance at 4.5V gate drive voltage|
| | 100mΩ (@VGS=10V) | On-resistance at 10V gate drive voltage|
| **ID (maximum drain current)**| -16A | Maximum continuous current under specified conditions|
| **Technology** | Trench | Provides low on-resistance and fast switching capability|
| **Application temperature range** | -55°C ~ 150°C | Suitable for a variety of industrial and consumer electronic environments|
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| **Parameter** | **Value** | **Description** |
|----------------------|------------------------------|--------------------------------------------|
| **Package** | TO252 | Surface mount package, suitable for compact circuit design|
| **Channel Type** | Single-P-Channel | Suitable for low-side switch applications|
| **VDS** | -100V | Drain-source voltage, maximum support -100V |
| **VGS** | ±20V | Gate-source voltage range|
| **Vth (threshold voltage)** | -2V | Minimum gate voltage required to turn on the MOSFET|
| **RDS(ON)** | 120mΩ (@VGS=4.5V) | On-resistance at 4.5V gate drive voltage|
| | 100mΩ (@VGS=10V) | On-resistance at 10V gate drive voltage|
| **ID (maximum drain current)**| -16A | Maximum continuous current under specified conditions|
| **Technology** | Trench | Provides low on-resistance and fast switching capability|
| **Application temperature range** | -55°C ~ 150°C | Suitable for a variety of industrial and consumer electronic environments|
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Domain and module applications：
III. ME16P10-VB Application Fields and Module Examples
1. **High Voltage Battery Management System (BMS)**
ME16P10-VB can be used in the battery protection circuit of electric vehicles and energy storage systems. It is responsible for cutting off the current when the battery is overloaded or short-circuited to protect the battery from damage.
2. **DC-DC Converter**
This MOSFET can be used as an efficient load switch in DC-DC converters, supporting high voltage and high current conversion, and is widely used in power management of industrial equipment and consumer electronics.
3. **Power Amplifier and RF Applications**
In power amplifiers and RF circuits, ME16P10-VB can be used for signal switching and power control to help optimize the performance and reliability of the equipment.
4. **Power Adapter and Switching Power Supply**
This type of MOSFET plays an important role in power adapters and switching power supplies. As a switching element, it provides efficient power management and is suitable for computers and other high-power electronic devices.
5. **Inverter and Solar System**
In solar inverter and photovoltaic power generation system, ME16P10-VB can be used for switch control to improve system efficiency and reliability and adapt to renewable energy applications.
ME16P10-VB's high voltage carrying capacity and excellent conduction performance make it widely applicable in power management and high voltage switching applications.
1. **High Voltage Battery Management System (BMS)**
ME16P10-VB can be used in the battery protection circuit of electric vehicles and energy storage systems. It is responsible for cutting off the current when the battery is overloaded or short-circuited to protect the battery from damage.
2. **DC-DC Converter**
This MOSFET can be used as an efficient load switch in DC-DC converters, supporting high voltage and high current conversion, and is widely used in power management of industrial equipment and consumer electronics.
3. **Power Amplifier and RF Applications**
In power amplifiers and RF circuits, ME16P10-VB can be used for signal switching and power control to help optimize the performance and reliability of the equipment.
4. **Power Adapter and Switching Power Supply**
This type of MOSFET plays an important role in power adapters and switching power supplies. As a switching element, it provides efficient power management and is suitable for computers and other high-power electronic devices.
5. **Inverter and Solar System**
In solar inverter and photovoltaic power generation system, ME16P10-VB can be used for switch control to improve system efficiency and reliability and adapt to renewable energy applications.
ME16P10-VB's high voltage carrying capacity and excellent conduction performance make it widely applicable in power management and high voltage switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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