ME15N75D-VB Product details
Product introduction:
ME15N75D-VB is a **single N-channel MOSFET** in **TO252** package, with **100V drain-source voltage (VDS)** and ±20V gate drive voltage (VGS). The device has a **turn-on voltage Vth of 1.8V** and an on-resistance of **114mΩ** @ VGS = 10V, which can effectively reduce power consumption. ME15N75D-VB supports **maximum 15A continuous drain current (ID)** and is manufactured using **trench technology**, which is suitable for applications requiring high voltage and medium current.
---
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** | **Description** |
|------------------|------------------------------|----------------------------------------------|
| **Package Type** | TO252 | Surface mount package, suitable for high power and high current applications|
| **MOSFET Configuration** | Single N-channel | Single N-type channel, suitable for high-speed switching applications|
| **Drain-Source Voltage (VDS)** | 100V | Maximum drain-source voltage, suitable for medium and high voltage power supply systems|
| **Gate Voltage (VGS)** | ±20V | Gate drive voltage range, improve application flexibility|
| **Turning Voltage (Vth)** | 1.8V | Turn-on threshold voltage of MOSFET|
| **On-resistance (RDS(ON))** | 114mΩ @ VGS = 10V | Moderate on-resistance, reduced power consumption, improved efficiency|
| **Maximum drain current (ID)**| 15A | Supports medium current load applications|
| **Technology** | Trench | Trench technology reduces conduction loss and switching loss|
---
Domain and module applications:
1. **DC-DC converter**
- ME15N75D-VB is suitable for **DC-DC converter**, especially in high voltage and medium current applications, such as computer power supply and industrial power supply, which can effectively reduce power consumption and improve system efficiency.
2. **Power management system**
- In **power management module**, this MOSFET can be used for switch control to help manage power distribution and protection, especially in battery-powered equipment, to optimize power efficiency and safety.
3. **Motor drive**
- Suitable for **motor drive system**, such as small DC motor drive application, ME15N75D-VB can provide reliable switch control to support efficient motor operation.
4. **LED driver circuit**
- This device can be used in **LED driver circuit** to control the current of LED lighting system, ensure stable brightness output and improve energy efficiency, and is suitable for various lighting solutions.
5. **Consumer electronics**
- ME15N75D-VB is widely used in **consumer electronics** fields, such as smart home appliances and portable devices, to improve product performance and service life through efficient power management and switch control.
ME15N75D-VB is a reliable MOSFET. With its high voltage tolerance and medium current handling capability, it is widely used in power management, motor drive and consumer electronics, and is suitable for the high efficiency requirements of modern electronic devices.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image