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ME13N10-VB Product details
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1. ME13N10-VB Product Introduction
ME13N10-VB is a high-performance **single N-channel MOSFET** in **TO-252 package**, designed for applications requiring high voltage and medium current. Its maximum drain-source voltage (VDS) is **100V**, and it has **15A continuous drain current (ID)** capability, suitable for a variety of electronic circuits and power management systems. The on-resistance of this MOSFET is **114mΩ** @VGS=10V, and it uses **trench technology**, which effectively reduces conduction loss and heat generation, making it very suitable for high-efficiency switching power supply applications.
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ME13N10-VB is a high-performance **single N-channel MOSFET** in **TO-252 package**, designed for applications requiring high voltage and medium current. Its maximum drain-source voltage (VDS) is **100V**, and it has **15A continuous drain current (ID)** capability, suitable for a variety of electronic circuits and power management systems. The on-resistance of this MOSFET is **114mΩ** @VGS=10V, and it uses **trench technology**, which effectively reduces conduction loss and heat generation, making it very suitable for high-efficiency switching power supply applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. ME13N10-VB Parameter Description
| **Parameter** | **Specification** | **Description** |
|---------------------|---------------------------|------------------------------------------------|
| **Package** | TO-252 | Compact package, suitable for surface mounting and heat dissipation|
| **Channel type** | Single N-channel | Suitable for high-efficiency switching applications|
| **VDS (drain-source voltage)** | 100V | Maximum withstand voltage, suitable for medium and high voltage power supply applications|
| **VGS (gate-source voltage)** | ±20V | Maximum voltage range of gate drive|
| **Vth (threshold voltage)** | 1.8V | Typical turn-on voltage, providing good gate control|
| **RDS(ON)@VGS=10V** | 114mΩ | On-resistance, ensuring low power consumption and efficient operation|
| **ID (drain current)** | 15A | Suitable for medium power applications, ensuring stable operation |
| **Technology** | Trench | Using trench technology to reduce conduction losses and improve thermal performance |
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| **Parameter** | **Specification** | **Description** |
|---------------------|---------------------------|------------------------------------------------|
| **Package** | TO-252 | Compact package, suitable for surface mounting and heat dissipation|
| **Channel type** | Single N-channel | Suitable for high-efficiency switching applications|
| **VDS (drain-source voltage)** | 100V | Maximum withstand voltage, suitable for medium and high voltage power supply applications|
| **VGS (gate-source voltage)** | ±20V | Maximum voltage range of gate drive|
| **Vth (threshold voltage)** | 1.8V | Typical turn-on voltage, providing good gate control|
| **RDS(ON)@VGS=10V** | 114mΩ | On-resistance, ensuring low power consumption and efficient operation|
| **ID (drain current)** | 15A | Suitable for medium power applications, ensuring stable operation |
| **Technology** | Trench | Using trench technology to reduce conduction losses and improve thermal performance |
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Domain and module applications：
III. Application fields and module examples of ME13N10-VB
1. **Switching Power Supply (SMPS)**
- Used for high-frequency switching and power conversion modules in various switching power supply applications. The low on-resistance of ME13N10-VB ensures efficient energy transfer and is suitable for use in AC-DC and DC-DC converters to improve overall system efficiency.
2. **LED Driver**
- In LED lighting and driver circuits, this MOSFET can be used as a switching element to control the brightness and power of the LED. Its superior conduction performance and thermal characteristics can extend the service life of the LED and increase the brightness.
3. **Battery Management System (BMS)**
- Used for battery charging and discharging management, the high voltage handling capability of ME13N10-VB makes it suitable for monitoring and control circuits of lithium-ion batteries and other types of batteries, ensuring safe and efficient use of batteries.
4. **Motor drive circuit**
- In motor control and drive applications, this MOSFET can provide stable current supply and fast switching response, suitable for small motor drives and robot control systems.
5. **Power Modules**
- In a variety of power modules, it is used as a power switch to achieve efficient power management and conversion. Its excellent heat dissipation performance makes it excel in high-power applications, suitable for industrial and consumer electronics.
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**Summary**: ME13N10-VB is widely used in switching power supplies, LED drivers, battery management systems, motor drivers and other fields with its high voltage and medium current capabilities, combined with low on-resistance and excellent thermal performance. The TO-252 package design makes it easy to integrate on compact circuit boards while effectively improving the reliability and efficiency of the system.
1. **Switching Power Supply (SMPS)**
- Used for high-frequency switching and power conversion modules in various switching power supply applications. The low on-resistance of ME13N10-VB ensures efficient energy transfer and is suitable for use in AC-DC and DC-DC converters to improve overall system efficiency.
2. **LED Driver**
- In LED lighting and driver circuits, this MOSFET can be used as a switching element to control the brightness and power of the LED. Its superior conduction performance and thermal characteristics can extend the service life of the LED and increase the brightness.
3. **Battery Management System (BMS)**
- Used for battery charging and discharging management, the high voltage handling capability of ME13N10-VB makes it suitable for monitoring and control circuits of lithium-ion batteries and other types of batteries, ensuring safe and efficient use of batteries.
4. **Motor drive circuit**
- In motor control and drive applications, this MOSFET can provide stable current supply and fast switching response, suitable for small motor drives and robot control systems.
5. **Power Modules**
- In a variety of power modules, it is used as a power switch to achieve efficient power management and conversion. Its excellent heat dissipation performance makes it excel in high-power applications, suitable for industrial and consumer electronics.
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**Summary**: ME13N10-VB is widely used in switching power supplies, LED drivers, battery management systems, motor drivers and other fields with its high voltage and medium current capabilities, combined with low on-resistance and excellent thermal performance. The TO-252 package design makes it easy to integrate on compact circuit boards while effectively improving the reliability and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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