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ME12N04-VB Product details
Back to previous pageProduct introduction：
1. ME12N04-VB Product Introduction
ME12N04-VB is a **single N-channel MOSFET** in a **TO-252** package, designed for high-performance applications. Its maximum drain-source voltage (VDS) is **40V**, suitable for high-current applications in medium and low voltage environments. The device has a gate-source voltage (VGS) range of ±20V and a threshold voltage (Vth) of **2.5V**, allowing it to be turned on at a lower gate drive voltage. Thanks to **Trench (trench) technology**, its on-resistance (RDS(ON)) is **14mΩ** at VGS of 4.5V and **12mΩ** at VGS of 10V, ensuring excellent current carrying capacity and energy efficiency, and can withstand a maximum continuous current of **55A**.
ME12N04-VB is a **single N-channel MOSFET** in a **TO-252** package, designed for high-performance applications. Its maximum drain-source voltage (VDS) is **40V**, suitable for high-current applications in medium and low voltage environments. The device has a gate-source voltage (VGS) range of ±20V and a threshold voltage (Vth) of **2.5V**, allowing it to be turned on at a lower gate drive voltage. Thanks to **Trench (trench) technology**, its on-resistance (RDS(ON)) is **14mΩ** at VGS of 4.5V and **12mΩ** at VGS of 10V, ensuring excellent current carrying capacity and energy efficiency, and can withstand a maximum continuous current of **55A**.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of ME12N04-VB
| **Parameter name** | **Value** | **Unit** | **Description** |
|---------------------|-------------------|-----------|-------------------------------------------|
| **Package type** | TO-252 | - | Surface mount package, suitable for high-density PCB design|
| **Channel configuration** | Single N-channel| - | Suitable for switching and power management applications|
| **Maximum drain-source voltage (VDS)** | 40 | V | Maximum withstand drain-source voltage|
| **Maximum gate-source voltage (VGS)** | ±20 | V | Safe operating range of gate-source voltage|
| **Threshold voltage (Vth)** | 2.5 | V | Minimum gate voltage when the device starts to turn on|
| **On-resistance (RDS(ON))** | 14 | mΩ | VGS=4.5V |
| **On-resistance (RDS(ON))** | 12 | mΩ | On-resistance at VGS=10V|
| **Maximum continuous current (ID)** | 55 | A | Maximum continuous drain current|
| **Technology type** | Trench | - | Trench technology, increasing current density and reducing on-resistance|
| **Operating temperature range** | -55 ~ 150 | ℃ | Safe operating temperature range of the device|
| **Mounting method** | Surface mount| - | Convenient for automated production and miniaturized PCB design|
| **Parameter name** | **Value** | **Unit** | **Description** |
|---------------------|-------------------|-----------|-------------------------------------------|
| **Package type** | TO-252 | - | Surface mount package, suitable for high-density PCB design|
| **Channel configuration** | Single N-channel| - | Suitable for switching and power management applications|
| **Maximum drain-source voltage (VDS)** | 40 | V | Maximum withstand drain-source voltage|
| **Maximum gate-source voltage (VGS)** | ±20 | V | Safe operating range of gate-source voltage|
| **Threshold voltage (Vth)** | 2.5 | V | Minimum gate voltage when the device starts to turn on|
| **On-resistance (RDS(ON))** | 14 | mΩ | VGS=4.5V |
| **On-resistance (RDS(ON))** | 12 | mΩ | On-resistance at VGS=10V|
| **Maximum continuous current (ID)** | 55 | A | Maximum continuous drain current|
| **Technology type** | Trench | - | Trench technology, increasing current density and reducing on-resistance|
| **Operating temperature range** | -55 ~ 150 | ℃ | Safe operating temperature range of the device|
| **Mounting method** | Surface mount| - | Convenient for automated production and miniaturized PCB design|
Domain and module applications：
3. Application fields and module examples
1. **Power management system**
ME12N04-VB can be used in **switching power supplies (SMPS)** and **DC-DC converters**, and its low on-resistance enables lower energy loss under high load. This is critical for applications such as power adapters and chargers.
2. **Automotive electronics**
In modern cars, this MOSFET can be used as a **motor driver** and **power distribution switch**, suitable for handling high current and low voltage scenarios such as electric seats and window lifts.
3. **Industrial control applications**
ME12N04-VB can be widely used in **load switches** and **motor control modules** of industrial equipment, providing reliable performance under frequent switching. Its high current capability and low conduction loss make it an ideal choice for automation equipment.
4. **Consumer Electronics**
In consumer electronics, such as **LED drivers** and **portable power management modules**, the device's high performance and small package make it suitable for compact design requirements.
In summary, ME12N04-VB is widely used in power management, automotive electronics, industrial control, consumer electronics and other fields due to its excellent electrical performance.
1. **Power management system**
ME12N04-VB can be used in **switching power supplies (SMPS)** and **DC-DC converters**, and its low on-resistance enables lower energy loss under high load. This is critical for applications such as power adapters and chargers.
2. **Automotive electronics**
In modern cars, this MOSFET can be used as a **motor driver** and **power distribution switch**, suitable for handling high current and low voltage scenarios such as electric seats and window lifts.
3. **Industrial control applications**
ME12N04-VB can be widely used in **load switches** and **motor control modules** of industrial equipment, providing reliable performance under frequent switching. Its high current capability and low conduction loss make it an ideal choice for automation equipment.
4. **Consumer Electronics**
In consumer electronics, such as **LED drivers** and **portable power management modules**, the device's high performance and small package make it suitable for compact design requirements.
In summary, ME12N04-VB is widely used in power management, automotive electronics, industrial control, consumer electronics and other fields due to its excellent electrical performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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