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ME10N03A-VB Product details
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1. **ME10N03A-VB Product Introduction**
ME10N03A-VB is a **single N-channel MOSFET** in **TO252** package, designed for high-performance applications. It has **30V drain-source voltage (V\_DS)** and **±20V gate-source voltage (V\_GS)**, which can operate reliably under high load conditions. The device uses **Trench (trench) technology**, which significantly reduces the on-resistance (R\_DS(ON)), making it perform well in the on state.
ME10N03A-VB is designed to support electronic devices that require high current handling capabilities and low power consumption. Its high on-capacity (I\_D) and low heat characteristics make it a preferred component in many fields such as power management, switching power supplies and motor drives.
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ME10N03A-VB is a **single N-channel MOSFET** in **TO252** package, designed for high-performance applications. It has **30V drain-source voltage (V\_DS)** and **±20V gate-source voltage (V\_GS)**, which can operate reliably under high load conditions. The device uses **Trench (trench) technology**, which significantly reduces the on-resistance (R\_DS(ON)), making it perform well in the on state.
ME10N03A-VB is designed to support electronic devices that require high current handling capabilities and low power consumption. Its high on-capacity (I\_D) and low heat characteristics make it a preferred component in many fields such as power management, switching power supplies and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description of ME10N03A-VB**
| **Parameter** | **Value** | **Description** |
|--------------------------|------------------------------------|---------------------------------------------|
| **Package** | TO252 | Provides good heat dissipation performance, suitable for high power applications|
| **MOSFET configuration** | Single N-channel | Single N-channel transistor for current control and switching|
| **Drain-source voltage V\_DS** | 30V | Maximum tolerable drain-source voltage|
| **Gate-source voltage V\_GS** | ±20V | Maximum applicable gate-source voltage|
| **Threshold voltage V\_th** | 1.7V | MOSFET starts to turn on when the gate voltage exceeds this value|
| **On-resistance R\_DS(ON)** | 9mΩ @ V\_GS=4.5V | At 4.5V On-resistance at gate voltage|
| | 7mΩ @ V\_GS=10V | On-resistance at 10V gate voltage|
| **Maximum drain current I\_D** | 70A | Maximum current that can be conducted under appropriate conditions|
| **Technology** | Trench technology | Provides low on-resistance and high efficiency|
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| **Parameter** | **Value** | **Description** |
|--------------------------|------------------------------------|---------------------------------------------|
| **Package** | TO252 | Provides good heat dissipation performance, suitable for high power applications|
| **MOSFET configuration** | Single N-channel | Single N-channel transistor for current control and switching|
| **Drain-source voltage V\_DS** | 30V | Maximum tolerable drain-source voltage|
| **Gate-source voltage V\_GS** | ±20V | Maximum applicable gate-source voltage|
| **Threshold voltage V\_th** | 1.7V | MOSFET starts to turn on when the gate voltage exceeds this value|
| **On-resistance R\_DS(ON)** | 9mΩ @ V\_GS=4.5V | At 4.5V On-resistance at gate voltage|
| | 7mΩ @ V\_GS=10V | On-resistance at 10V gate voltage|
| **Maximum drain current I\_D** | 70A | Maximum current that can be conducted under appropriate conditions|
| **Technology** | Trench technology | Provides low on-resistance and high efficiency|
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Domain and module applications：
3. **Application fields and typical module examples**
1. **Consumer electronics**
- **Laptops and tablets**: MOSFETs are used in power management modules to improve battery charging efficiency and extend battery life.
- **Smartphone chargers**: In fast charging systems, MOSFETs are used to control charging current and optimize power consumption.
2. **Power management and conversion**
- **DC-DC converters**: ME10N03A-VB is widely used in high-efficiency buck and boost converters to ensure stable output and improve system performance.
- **Switching power supply (SMPS)**: As the main switching element, MOSFETs achieve efficient energy conversion in switching power supplies.
3. **Motor control modules**
- **DC motor drivers**: In power tools and household appliances, MOSFETs control the switching and speed of motors to achieve efficient driving.
- **Stepper motor control systems**: Provide reliable current regulation and switching capabilities for precise position control.
4. **Industrial Applications**
- **Programmable Logic Controller (PLC)**: MOSFET can be used to control motors and sensors to improve the efficiency of automation equipment.
- **Power Supply Module**: In the power management of industrial equipment, ME10N03A-VB can control high-power loads to ensure stable operation of the equipment.
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ME10N03A-VB has become an ideal choice for various power management systems and high-current applications due to its high performance characteristics and wide range of applications. Its application in multiple fields such as consumer, industrial and motor control makes it play an important role in modern electronic design.
1. **Consumer electronics**
- **Laptops and tablets**: MOSFETs are used in power management modules to improve battery charging efficiency and extend battery life.
- **Smartphone chargers**: In fast charging systems, MOSFETs are used to control charging current and optimize power consumption.
2. **Power management and conversion**
- **DC-DC converters**: ME10N03A-VB is widely used in high-efficiency buck and boost converters to ensure stable output and improve system performance.
- **Switching power supply (SMPS)**: As the main switching element, MOSFETs achieve efficient energy conversion in switching power supplies.
3. **Motor control modules**
- **DC motor drivers**: In power tools and household appliances, MOSFETs control the switching and speed of motors to achieve efficient driving.
- **Stepper motor control systems**: Provide reliable current regulation and switching capabilities for precise position control.
4. **Industrial Applications**
- **Programmable Logic Controller (PLC)**: MOSFET can be used to control motors and sensors to improve the efficiency of automation equipment.
- **Power Supply Module**: In the power management of industrial equipment, ME10N03A-VB can control high-power loads to ensure stable operation of the equipment.
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ME10N03A-VB has become an ideal choice for various power management systems and high-current applications due to its high performance characteristics and wide range of applications. Its application in multiple fields such as consumer, industrial and motor control makes it play an important role in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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