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ME06N30-VB Product details
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1. ME06N30-VB Product Introduction
ME06N30-VB is a **high-voltage N-channel MOSFET** in a **TO252 package**. Its main feature is a **650V drain-source voltage (VDS)**, which is suitable for high-voltage conversion applications in harsh environments. The device adopts **Super-Junction (Super-Junction) multiple EPI technology**, with low on-resistance and excellent switching performance, thereby improving the energy efficiency and stability of the system. Its typical **RDS(ON)** is 1000mΩ (VGS=10V), and supports up to **5A continuous current (ID)**, making it very suitable for various switching power supplies and high-voltage control circuits.
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ME06N30-VB is a **high-voltage N-channel MOSFET** in a **TO252 package**. Its main feature is a **650V drain-source voltage (VDS)**, which is suitable for high-voltage conversion applications in harsh environments. The device adopts **Super-Junction (Super-Junction) multiple EPI technology**, with low on-resistance and excellent switching performance, thereby improving the energy efficiency and stability of the system. Its typical **RDS(ON)** is 1000mΩ (VGS=10V), and supports up to **5A continuous current (ID)**, making it very suitable for various switching power supplies and high-voltage control circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. ME06N30-VB Detailed Parameters Description
| **Parameter** | **Value** | **Description** |
|---------------------|--------------------------------|-----------------------------------------|
| **Package Type** | TO252 | Compact package, suitable for applications with limited space. |
| **Configuration** | Single N-channel | Supports efficient single-channel switch control. |
| **Drain-Source Voltage (VDS)** | 650V | Suitable for circuits with high-voltage input. |
| **Gate-Source Voltage (VGS)** | ±30V | Can withstand gate drive voltages up to ±30V. |
| **Threshold Voltage (Vth)** | 3.5V | The gate voltage must reach this value before the device will turn on. |
| **On-Resistance (RDS(ON))** | 1000mΩ @ VGS=10V | Typical on-resistance at 10V gate drive voltage. |
| **Maximum Drain Current (ID)** | 5A | The maximum continuous drain current of the device under specific conditions. |
| **Technology Type** | SJ_Multi-EPI | Superjunction multi-layer epitaxial technology to improve voltage blocking capability and efficiency. |
| **Application Temperature Range** | -55°C to +150°C | Suitable for various extreme temperature environments. |
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| **Parameter** | **Value** | **Description** |
|---------------------|--------------------------------|-----------------------------------------|
| **Package Type** | TO252 | Compact package, suitable for applications with limited space. |
| **Configuration** | Single N-channel | Supports efficient single-channel switch control. |
| **Drain-Source Voltage (VDS)** | 650V | Suitable for circuits with high-voltage input. |
| **Gate-Source Voltage (VGS)** | ±30V | Can withstand gate drive voltages up to ±30V. |
| **Threshold Voltage (Vth)** | 3.5V | The gate voltage must reach this value before the device will turn on. |
| **On-Resistance (RDS(ON))** | 1000mΩ @ VGS=10V | Typical on-resistance at 10V gate drive voltage. |
| **Maximum Drain Current (ID)** | 5A | The maximum continuous drain current of the device under specific conditions. |
| **Technology Type** | SJ_Multi-EPI | Superjunction multi-layer epitaxial technology to improve voltage blocking capability and efficiency. |
| **Application Temperature Range** | -55°C to +150°C | Suitable for various extreme temperature environments. |
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Domain and module applications：
III. Application fields and module examples of ME06N30-VB
1. **Power management module**
ME06N30-VB is very suitable for **switching power supply (SMPS)**, such as industrial and consumer power converters. On the high-voltage side, it can effectively convert DC voltage to lower voltage, suitable for chargers and adapters. Its high withstand voltage characteristics ensure that the equipment can operate reliably under **380V or higher grid voltage**.
2. **Photovoltaic inverter and battery management system**
In **solar photovoltaic system**, this MOSFET can be used in the high-voltage bridge arm part of the inverter to achieve efficient conversion from DC to AC. In the battery management system, it can participate in the charge and discharge control of the high-voltage battery pack to ensure battery life and safety.
3. **Motor drive and home appliance control**
ME06N30-VB can be used as the power switch of the inverter bridge in the **motor drive module** to control the start and speed regulation of the high-voltage motor. It can also provide efficient energy management in compressor control circuits of household appliances such as **air conditioners and refrigerators**.
4. **LED lighting driver**
In **high-voltage LED driver circuits**, this MOSFET can be used to control constant current output, support efficient operation of LEDs under mains power supply conditions, and avoid the impact of current fluctuations on lamp life.
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ME06N30-VB's **multiple EPI super junction technology** makes it suitable for occasions with high **high voltage tolerance and energy efficiency** requirements, such as **switching power supplies, inverters, motor control** and other fields. In these modules, the device can effectively reduce conduction losses and ensure stable system operation.
1. **Power management module**
ME06N30-VB is very suitable for **switching power supply (SMPS)**, such as industrial and consumer power converters. On the high-voltage side, it can effectively convert DC voltage to lower voltage, suitable for chargers and adapters. Its high withstand voltage characteristics ensure that the equipment can operate reliably under **380V or higher grid voltage**.
2. **Photovoltaic inverter and battery management system**
In **solar photovoltaic system**, this MOSFET can be used in the high-voltage bridge arm part of the inverter to achieve efficient conversion from DC to AC. In the battery management system, it can participate in the charge and discharge control of the high-voltage battery pack to ensure battery life and safety.
3. **Motor drive and home appliance control**
ME06N30-VB can be used as the power switch of the inverter bridge in the **motor drive module** to control the start and speed regulation of the high-voltage motor. It can also provide efficient energy management in compressor control circuits of household appliances such as **air conditioners and refrigerators**.
4. **LED lighting driver**
In **high-voltage LED driver circuits**, this MOSFET can be used to control constant current output, support efficient operation of LEDs under mains power supply conditions, and avoid the impact of current fluctuations on lamp life.
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ME06N30-VB's **multiple EPI super junction technology** makes it suitable for occasions with high **high voltage tolerance and energy efficiency** requirements, such as **switching power supplies, inverters, motor control** and other fields. In these modules, the device can effectively reduce conduction losses and ensure stable system operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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