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ME06N10-VB Product details
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1. ME06N10-VB Product Introduction
ME06N10-VB is a **single N-channel MOSFET**, packaged in **TO-252**, suitable for applications requiring high voltage and medium current. The device has a maximum drain-source voltage (VDS) of **100V**, and a gate-source voltage (VGS) tolerance of ±20V. Its gate threshold voltage (Vth) is only **1.8V**, and it can be started with a lower gate drive voltage. With its **Trench (trench type) technology** design, the device has an on-resistance (RDS(ON)) of **114mΩ (@VGS=10V)** when turned on, providing excellent conductivity and low power loss, and can handle a continuous current of up to **15A**.
ME06N10-VB is a **single N-channel MOSFET**, packaged in **TO-252**, suitable for applications requiring high voltage and medium current. The device has a maximum drain-source voltage (VDS) of **100V**, and a gate-source voltage (VGS) tolerance of ±20V. Its gate threshold voltage (Vth) is only **1.8V**, and it can be started with a lower gate drive voltage. With its **Trench (trench type) technology** design, the device has an on-resistance (RDS(ON)) of **114mΩ (@VGS=10V)** when turned on, providing excellent conductivity and low power loss, and can handle a continuous current of up to **15A**.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of ME06N10-VB
| **Parameter name** | **Value** | **Unit** | **Description** |
|---------------------|--------------------|-----------|------------------------------------------|
| **Package type** | TO-252 | - | Surface mount package, suitable for high-density PCB design|
| **Channel configuration** | Single N-channel| - | Suitable for switching and power management applications|
| **Maximum drain-source voltage (VDS)** | 100 | V | Maximum withstand drain-source voltage|
| **Maximum gate-source voltage (VGS)** | ±20 | V | Safe operating range of gate-source voltage|
| **Threshold voltage (Vth)** | 1.8 | V | Minimum gate voltage when the device starts to turn on|
| **On-resistance (RDS(ON))** | 114 | mΩ | VGS=10V |
| **Maximum continuous current (ID)** | 15 | A | Maximum continuous drain current|
| **Technology type** | Trench | - | Trench technology, increasing current density and reducing on-resistance|
| **Operating temperature range** | -55 ~ 150 | ℃ | Safe operating temperature range of the device|
| **Mounting method** | Surface mount| - | Convenient for automated production and miniaturized PCB design|
| **Parameter name** | **Value** | **Unit** | **Description** |
|---------------------|--------------------|-----------|------------------------------------------|
| **Package type** | TO-252 | - | Surface mount package, suitable for high-density PCB design|
| **Channel configuration** | Single N-channel| - | Suitable for switching and power management applications|
| **Maximum drain-source voltage (VDS)** | 100 | V | Maximum withstand drain-source voltage|
| **Maximum gate-source voltage (VGS)** | ±20 | V | Safe operating range of gate-source voltage|
| **Threshold voltage (Vth)** | 1.8 | V | Minimum gate voltage when the device starts to turn on|
| **On-resistance (RDS(ON))** | 114 | mΩ | VGS=10V |
| **Maximum continuous current (ID)** | 15 | A | Maximum continuous drain current|
| **Technology type** | Trench | - | Trench technology, increasing current density and reducing on-resistance|
| **Operating temperature range** | -55 ~ 150 | ℃ | Safe operating temperature range of the device|
| **Mounting method** | Surface mount| - | Convenient for automated production and miniaturized PCB design|
Domain and module applications：
III. Application fields and module examples
1. **Power management module**
ME06N10-VB is used as the main switch device in **switching power supply (SMPS)**, which can withstand high voltage and ensure good conduction performance. Its Trench technology reduces conduction loss and improves energy efficiency. Commonly used in:
- AC-DC converter
- DC-DC buck/boost conversion module
2. **Automotive electronic system**
In the **on-board power module** of electric or hybrid vehicles, ME06N10-VB can effectively handle the high current load requirements of 12V and 48V systems, such as battery management system (BMS) and motor drive.
3. **Industrial control system**
This MOSFET is suitable for **motor drive modules** and **load switches** in industrial control, and can handle application scenarios that require frequent switching. Its low RDS(ON) and high reliability are particularly suitable for automation equipment.
4. **Consumer Electronics**
In consumer electronic devices such as LED drivers and battery chargers, ME06N10-VB ensures stable operation and extends battery life through its high voltage tolerance and excellent power efficiency.
In summary, ME06N10-VB is widely used in power conversion, automotive electronics, industrial control, and consumer electronics due to its high voltage and current handling capabilities.
1. **Power management module**
ME06N10-VB is used as the main switch device in **switching power supply (SMPS)**, which can withstand high voltage and ensure good conduction performance. Its Trench technology reduces conduction loss and improves energy efficiency. Commonly used in:
- AC-DC converter
- DC-DC buck/boost conversion module
2. **Automotive electronic system**
In the **on-board power module** of electric or hybrid vehicles, ME06N10-VB can effectively handle the high current load requirements of 12V and 48V systems, such as battery management system (BMS) and motor drive.
3. **Industrial control system**
This MOSFET is suitable for **motor drive modules** and **load switches** in industrial control, and can handle application scenarios that require frequent switching. Its low RDS(ON) and high reliability are particularly suitable for automation equipment.
4. **Consumer Electronics**
In consumer electronic devices such as LED drivers and battery chargers, ME06N10-VB ensures stable operation and extends battery life through its high voltage tolerance and excellent power efficiency.
In summary, ME06N10-VB is widely used in power conversion, automotive electronics, industrial control, and consumer electronics due to its high voltage and current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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