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ME04N25-VB Product details
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1. ME04N25-VB MOSFET Product Introduction
ME04N25-VB is a **single N-channel field effect transistor (MOSFET)** in **TO-252 package**, with **250V drain-source voltage (V\_DS)** and **±20V gate-source voltage (V\_GS)**, manufactured using **Trench technology**. This MOSFET is suitable for a variety of power systems and electronic modules with its high voltage resistance and reliable conduction performance, and has excellent performance in **switching power supplies, DC-DC converters** and **industrial load drives**.
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ME04N25-VB is a **single N-channel field effect transistor (MOSFET)** in **TO-252 package**, with **250V drain-source voltage (V\_DS)** and **±20V gate-source voltage (V\_GS)**, manufactured using **Trench technology**. This MOSFET is suitable for a variety of power systems and electronic modules with its high voltage resistance and reliable conduction performance, and has excellent performance in **switching power supplies, DC-DC converters** and **industrial load drives**.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. ME04N25-VB MOSFET Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------------|------------------------------------------------|
| **Package type** | TO-252 | Compact surface mount package, suitable for high-density circuit board design|
| **MOSFET type** | Single-N-Channel | Suitable for high-frequency switching and power management|
| **Drain-source voltage (V\_DS)** | 250V | Maximum tolerable drain-source voltage|
| **Gate-source voltage (V\_GS)** | ±20V | Maximum gate control voltage to ensure stable operation of the device|
| **Turning on voltage (V\_th)** | 3V | 3V gate voltage is required for the MOSFET to start turning on|
| **On-resistance (R\_DS(ON))** | 640mΩ @ V\_GS=10V | Drain-source resistance in the on state, affecting conduction losses|
| **Maximum drain current (I\_D)** | 4.5A | Maximum current that can be carried under specific operating conditions|
| **Technology** | Trench | Modern technology to improve conduction capability and reduce gate charge|
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| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------------|------------------------------------------------|
| **Package type** | TO-252 | Compact surface mount package, suitable for high-density circuit board design|
| **MOSFET type** | Single-N-Channel | Suitable for high-frequency switching and power management|
| **Drain-source voltage (V\_DS)** | 250V | Maximum tolerable drain-source voltage|
| **Gate-source voltage (V\_GS)** | ±20V | Maximum gate control voltage to ensure stable operation of the device|
| **Turning on voltage (V\_th)** | 3V | 3V gate voltage is required for the MOSFET to start turning on|
| **On-resistance (R\_DS(ON))** | 640mΩ @ V\_GS=10V | Drain-source resistance in the on state, affecting conduction losses|
| **Maximum drain current (I\_D)** | 4.5A | Maximum current that can be carried under specific operating conditions|
| **Technology** | Trench | Modern technology to improve conduction capability and reduce gate charge|
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Domain and module applications：
3. Application fields and module examples of ME04N25-VB
1. **Power conversion and voltage regulation module**
ME04N25-VB is suitable for **DC-DC converters**, power management ICs and **switching power supplies (SMPS)**. Its high withstand voltage characteristics (250V) and low on-current capability are suitable for medium and low power voltage regulation modules, ensuring reliable system operation and loss control within a reasonable range.
2. **Industrial control and drive**
In industrial applications, this MOSFET can be used to drive loads such as **relays, industrial fans, and solenoid valves**, especially for scenarios with large voltage fluctuations. Its ±20V gate-source voltage allows a wide range of control signal inputs, enhancing the flexibility of the control system.
3. **Household appliances and consumer electronics**
This MOSFET can be used in **motor control circuits, lighting systems, and air conditioning compressor** drives in home appliances, providing efficient switching control and reducing energy consumption. At the same time, its TO-252 package is easy to integrate in small electronic devices.
4. **Battery Management System (BMS)**
In lithium battery packs and energy storage systems, the high voltage capability of this MOSFET is suitable for **overvoltage protection modules** to ensure that the battery pack remains safe under abnormal voltage conditions.
Through the above application examples, ME04N25-VB demonstrates its **high voltage switching capability and medium current carrying** characteristics, achieving good performance and reliability in a variety of fields.
1. **Power conversion and voltage regulation module**
ME04N25-VB is suitable for **DC-DC converters**, power management ICs and **switching power supplies (SMPS)**. Its high withstand voltage characteristics (250V) and low on-current capability are suitable for medium and low power voltage regulation modules, ensuring reliable system operation and loss control within a reasonable range.
2. **Industrial control and drive**
In industrial applications, this MOSFET can be used to drive loads such as **relays, industrial fans, and solenoid valves**, especially for scenarios with large voltage fluctuations. Its ±20V gate-source voltage allows a wide range of control signal inputs, enhancing the flexibility of the control system.
3. **Household appliances and consumer electronics**
This MOSFET can be used in **motor control circuits, lighting systems, and air conditioning compressor** drives in home appliances, providing efficient switching control and reducing energy consumption. At the same time, its TO-252 package is easy to integrate in small electronic devices.
4. **Battery Management System (BMS)**
In lithium battery packs and energy storage systems, the high voltage capability of this MOSFET is suitable for **overvoltage protection modules** to ensure that the battery pack remains safe under abnormal voltage conditions.
Through the above application examples, ME04N25-VB demonstrates its **high voltage switching capability and medium current carrying** characteristics, achieving good performance and reliability in a variety of fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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