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MDS9652EURH-VB Product details

Product introduction:

MDS9652EURH-VB MOSFET Product Introduction

MDS9652EURH-VB is a bipolar N+P channel MOSFET in SOP8 package, suitable for ±30V operating voltage. The device has a combination of N-channel and P-channel configurations, supports a maximum drain current of ±8A, and is suitable for bidirectional switch control. Its on-resistance is 18mΩ@VGS=10V for N-channel and 40mΩ@VGS=10V for P-channel. It uses Trench technology and has efficient switching performance and low conduction loss. This device is very suitable for power management, charge and discharge control, and battery protection systems that require bipolar switching functions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
MDS9652EURH-VB Detailed parameter description

- **Device type**: Dual N+P channel MOSFET
- **Package**: SOP8
- **Technology**: Trench
- **VDS (drain-source voltage)**: ±30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**:
- N channel: 1.6V
- P channel: -1.7V
- **RDS(ON) (on resistance)**:
- N channel:
- 24mΩ @ VGS = 4.5V
- 18mΩ @ VGS = 10V
- P channel:
- 50mΩ @ VGS = 4.5V
- 40mΩ @ VGS = 10V
- **ID (Continuous Drain Current)**: ±8A
- **Power dissipation**: Depends on system thermal design
- **Operating temperature range**: -55°C to 150°C
- **Features**:
- Dual N+P channel design, supports bidirectional switch control
- Low RDS(ON) reduces conduction loss and improves system efficiency
- Suitable for applications requiring bidirectional control such as power management and battery protection

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Domain and module applications:

Applications and module examples

1. **Power management system**:
The dual N+P channel configuration of the MDS9652EURH-VB is ideal for power management systems, especially those requiring bidirectional current control. It is capable of controlling current in both the positive and negative directions, and is suitable for power switches, voltage converters, and protection circuits. In power management modules for communications equipment, laptops, chargers, and other devices, this MOSFET can effectively improve power conversion efficiency and system reliability.

2. **Battery management and protection**:
Due to its excellent bidirectional conduction capability, the MDS9652EURH-VB is widely used in battery management systems (BMS), especially in the charge and discharge control of lithium-ion batteries. Its low on-resistance and high current capability enable it to effectively manage the battery charge and discharge process, ensuring safety and extending battery life. Its P-channel MOSFET portion also helps achieve efficient current control in the discharge path, suitable for battery protection applications in smartphones, tablets, and other portable devices.

3. **DC-DC Converter and Regulator**:
In DC-DC converters, the bipolar switch design of MDS9652EURH-VB can achieve efficient bidirectional current switching, providing more flexible and efficient voltage regulation. Especially in the design of regulators that require bipolar control, the fast switching capability of MOSFET enables it to greatly improve the efficiency of power conversion. This makes the device suitable for fields that require precise voltage control, such as industrial power supplies and server power supplies.

4. **H-bridge Circuit and Motor Drive**:
MDS9652EURH-VB can be used in bidirectional control applications in H-bridge circuits, such as motor drive systems. It can achieve forward and reverse control of the motor in the bipolar configuration of the N+P channel, which is suitable for low-voltage motor drive scenarios, such as drones, fans, power tools, etc. Its efficient switching performance and high current support enable the system to operate in a more efficient working state.

5. **Reverse current protection circuit**:
In applications where reverse current flow needs to be prevented, the MDS9652EURH-VB can be used as a key component in the reverse current protection circuit. Its dual-channel design provides effective current control in both positive and negative current directions, ensuring stable operation of the system in different operating modes. This application is widely used in USB power systems, automotive power modules and other scenarios.

With its flexible dual-channel configuration and efficient switching performance, the MDS9652EURH-VB MOSFET is an ideal choice for multi-function power management, protection and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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