Product introduction：
MDS1652EURH-VB Product Introduction
The MDS1652EURH-VB is a high-performance single N-channel power MOSFET in SOP8 package, designed for applications requiring high efficiency and low on-resistance. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) range of ±20V, the device is suitable for a variety of low to medium voltage power management applications. Its threshold voltage (Vth) is 1.7V, ensuring fast switching characteristics. The MDS1652EURH-VB has an on-resistance (RDS(ON)) as low as 4mΩ at VGS = 10V, has extremely low power loss, and is suitable for high current (ID) applications with a maximum rated current of 18A. Using Trench technology, this MOSFET provides excellent thermal performance and electrical characteristics, which can effectively improve the overall efficiency of the system.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
MDS1652EURH-VB Detailed parameter description
- **Package:** SOP8
- **Configuration:** Single-N-Channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 5mΩ @ VGS = 4.5V
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID):** 18A
- **Technology:** Trench
Domain and module applications：
MDS1652EURH-VB Applications and Modules
1. **DC-DC Converters**: The MDS1652EURH-VB is ideal for use as a switching element in DC-DC converters, especially where high efficiency and low power consumption are required. Its low on-resistance can significantly reduce energy loss and improve conversion efficiency, making it an ideal choice in various power modules.
2. **Power Management IC**: In power management integrated circuits, the MDS1652EURH-VB can be used as a switching device to provide efficient power control. Its high current handling capability and low on-resistance enable it to provide stable power output in a variety of applications.
3. **Battery-Powered Devices**: This MOSFET is suitable for battery-powered devices such as portable electronics and electric vehicles. Its low on-resistance and high current capability can optimize battery efficiency and extend the operating time of the device.
4. **Motor Drive**: The MDS1652EURH-VB can be used in motor drive applications, especially in motor control systems that require efficient switching and reliable control. Its fast switching capability helps improve the response speed and performance of the motor.
5. **LED Drive Circuit**: In LED drive circuits, the MDS1652EURH-VB can be used as an efficient switch to control the brightness and power of the LED. Its low on-resistance can improve the energy efficiency of the overall system, reduce heat generation, and improve system stability.
Through these applications, the MDS1652EURH-VB can meet the needs of modern electronic devices for high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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