MDS1521URH-VB Product details
Product introduction:
MDS1521URH-VB is a P-channel MOSFET with a maximum drain-source voltage (VDS) of -40V and a drain current (ID) of -50A. It uses a TO252 package and is suitable for high-power switching applications. The device uses advanced trench technology to achieve a lower on-resistance (RDS(ON)). The on-resistance is 15mΩ at VGS = 4.5V and is lower to 12mΩ at VGS = 10V. This makes the MDS1521URH-VB have good conductivity in high-efficiency applications and is suitable for power management, motor drive and other fields. Its gate threshold voltage (Vth) is -2V, ensuring excellent switching performance under a variety of operating voltages.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Package**: TO252
- **Configuration**: Single P-channel
- **VDS (drain-source voltage)**: -40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: -2V
- **RDS(ON) (drain-source on-resistance)**:
- 15mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **ID (drain current)**: -50A
- **Technology**: Trench technology
- **Operating temperature range**: The operating temperature is wide and can adapt to high or low temperature conditions in industrial and commercial environments.
Domain and module applications:
1. **Power Management Modules (DC-DC Converters)**:
The MDS1521URH-VB is suitable for use in DC-DC converters and power management modules, especially where efficient step-down operation is required. The P-channel MOSFET excels in power management systems by simplifying load switch design, reducing device count, and ensuring efficient power conversion through low on-resistance.
2. **Motor Drivers and Controllers**:
Due to its large leakage current capability (-50A) and low on-resistance, this MOSFET is ideal for use in motor controllers. It provides reliable current control and is suitable for power tools, small motor drives, and other motor applications that require high current.
3. **Load Switch**:
The P-channel structure of the MDS1521URH-VB is suitable for efficient load switching applications. Its low on-resistance makes it lose less when current passes through, and it is suitable for systems that require fast response and efficient control, such as load switches in battery-powered devices or mobile devices.
4. **Automotive Electronic Systems**:
In the field of automotive electronics, this MOSFET can be used in power control units (such as on-board chargers, DC-DC converters, etc.) to ensure efficient current control and voltage conversion. Its lower RDS(ON) maintains low power operation of the system at higher currents, helping to improve overall energy efficiency.
In summary, the MDS1521URH-VB, with its trench technology, low on-resistance and high current capability, is widely used in fields that require high efficiency and reliability, such as power management, load switching and motor control.
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