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MDIS2N60TH-VB Product details
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MDIS2N60TH-VB Product Overview:
MDIS2N60TH-VB is a high voltage N-channel MOSFET with a maximum drain-source voltage (VDS) of 650V and a drain current (ID) of 2A. The device is packaged in TO251 and is designed for high power applications. It uses planar process technology to provide reliable switching performance, and although its drain-source on-resistance (RDS(ON)) is 4300mΩ, it still has good performance at higher currents. The gate threshold voltage (Vth) is 3.5V, which can provide stable control capabilities under a variety of operating conditions and is suitable for various industrial and power management applications.
MDIS2N60TH-VB is a high voltage N-channel MOSFET with a maximum drain-source voltage (VDS) of 650V and a drain current (ID) of 2A. The device is packaged in TO251 and is designed for high power applications. It uses planar process technology to provide reliable switching performance, and although its drain-source on-resistance (RDS(ON)) is 4300mΩ, it still has good performance at higher currents. The gate threshold voltage (Vth) is 3.5V, which can provide stable control capabilities under a variety of operating conditions and is suitable for various industrial and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description:
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (drain-source on-resistance)**: 4300mΩ @ VGS = 10V
- **ID (drain current)**: 2A
- **Technology**: Planar process
- **Operating temperature range**: Operate at appropriate ambient temperature to ensure product stability and reliability.
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (drain-source on-resistance)**: 4300mΩ @ VGS = 10V
- **ID (drain current)**: 2A
- **Technology**: Planar process
- **Operating temperature range**: Operate at appropriate ambient temperature to ensure product stability and reliability.
Domain and module applications：
Applications and modules:
1. **Power Management and Converters**:
The MDIS2N60TH-VB is suitable for power converters and switch mode power supplies (SMPS) applications, especially where high voltage control is required. Its 650V withstand voltage allows it to safely handle high voltages, ensuring efficient performance and low power operation in power management.
2. **LED Lighting Systems**:
This MOSFET is suitable for LED lighting driver modules, especially in high power LED applications. Despite its high RDS(ON), its high voltage capability ensures the stability of the LED under different operating conditions, making it suitable for industrial and commercial lighting applications.
3. **Motor Control**:
In motor drive applications, the MDIS2N60TH-VB can be used for small motor control, suitable for applications such as power tools and household appliances that require 2A current. Its reliable switching performance enables motors to operate safely in high voltage environments.
4. **Industrial Equipment**:
This MOSFET is suitable for various industrial control systems, such as welding equipment and power distribution systems. Its high voltage and relatively low current characteristics can meet the requirements of power management and control in industrial applications.
The MDIS2N60TH-VB is a MOSFET suitable for use in high voltage environments, which can provide reliable performance in a variety of applications, especially in the fields of power management, LED lighting and motor control.
1. **Power Management and Converters**:
The MDIS2N60TH-VB is suitable for power converters and switch mode power supplies (SMPS) applications, especially where high voltage control is required. Its 650V withstand voltage allows it to safely handle high voltages, ensuring efficient performance and low power operation in power management.
2. **LED Lighting Systems**:
This MOSFET is suitable for LED lighting driver modules, especially in high power LED applications. Despite its high RDS(ON), its high voltage capability ensures the stability of the LED under different operating conditions, making it suitable for industrial and commercial lighting applications.
3. **Motor Control**:
In motor drive applications, the MDIS2N60TH-VB can be used for small motor control, suitable for applications such as power tools and household appliances that require 2A current. Its reliable switching performance enables motors to operate safely in high voltage environments.
4. **Industrial Equipment**:
This MOSFET is suitable for various industrial control systems, such as welding equipment and power distribution systems. Its high voltage and relatively low current characteristics can meet the requirements of power management and control in industrial applications.
The MDIS2N60TH-VB is a MOSFET suitable for use in high voltage environments, which can provide reliable performance in a variety of applications, especially in the fields of power management, LED lighting and motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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