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MDI6N60BTH-VB Product details
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MDI6N60BTH-VB MOSFET Product Introduction
The MDI6N60BTH-VB is a high-voltage single N-channel MOSFET in a TO252 package, designed for high-voltage power supply and power control applications. With a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of up to ±30V, the device is capable of providing excellent switching performance in high-voltage operating environments. Its typical on-resistance (RDS(ON)) is 1000mΩ@VGS=10V, and its maximum drain current (ID) is 5A, making it suitable for applications with medium power current requirements. The MDI6N60BTH-VB uses super junction (SJ) multi-EPI technology, which gives it lower conduction losses and better thermal efficiency, making it suitable for high-efficiency power conversion and control systems.
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The MDI6N60BTH-VB is a high-voltage single N-channel MOSFET in a TO252 package, designed for high-voltage power supply and power control applications. With a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of up to ±30V, the device is capable of providing excellent switching performance in high-voltage operating environments. Its typical on-resistance (RDS(ON)) is 1000mΩ@VGS=10V, and its maximum drain current (ID) is 5A, making it suitable for applications with medium power current requirements. The MDI6N60BTH-VB uses super junction (SJ) multi-EPI technology, which gives it lower conduction losses and better thermal efficiency, making it suitable for high-efficiency power conversion and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- Compact package with good thermal performance, suitable for surface mount applications.
- **Configuration**: Single N-channel
- Single conduction channel design, easy to control and circuit integration.
- **VDS (drain-source voltage)**: 650V
- High voltage carrying capacity, suitable for working in high voltage applications, ensuring circuit stability.
- **VGS (gate-source voltage)**: ±30V
- Provides a wide range of gate drive voltage to increase design flexibility.
- **Vth (threshold voltage)**: 3.5V
- Ensures that the MOSFET is turned on at a lower gate voltage, suitable for use in applications requiring high control accuracy.
- **RDS(ON) @ VGS=10V**: 1000mΩ
- Provides relatively low on-resistance at medium and high voltages to reduce switching losses.
- **ID (maximum drain current)**: 5A
- Supports medium power loads and is suitable for a variety of power management and control circuits.
- **Technology**: Superjunction Multi-EPI (SJ_Multi-EPI)
- Provides low conduction losses and excellent thermal management performance to improve overall energy efficiency.
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- **Package type**: TO252
- Compact package with good thermal performance, suitable for surface mount applications.
- **Configuration**: Single N-channel
- Single conduction channel design, easy to control and circuit integration.
- **VDS (drain-source voltage)**: 650V
- High voltage carrying capacity, suitable for working in high voltage applications, ensuring circuit stability.
- **VGS (gate-source voltage)**: ±30V
- Provides a wide range of gate drive voltage to increase design flexibility.
- **Vth (threshold voltage)**: 3.5V
- Ensures that the MOSFET is turned on at a lower gate voltage, suitable for use in applications requiring high control accuracy.
- **RDS(ON) @ VGS=10V**: 1000mΩ
- Provides relatively low on-resistance at medium and high voltages to reduce switching losses.
- **ID (maximum drain current)**: 5A
- Supports medium power loads and is suitable for a variety of power management and control circuits.
- **Technology**: Superjunction Multi-EPI (SJ_Multi-EPI)
- Provides low conduction losses and excellent thermal management performance to improve overall energy efficiency.
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Domain and module applications：
Applications and modules
1. **Power converters and inverters**: MDI6N60BTH-VB is very suitable for high-voltage power converters and inverters. Its high voltage resistance and low conduction loss make it excellent in AC-DC and DC-DC conversion, especially suitable for photovoltaic inverters and wind energy conversion systems.
2. **Switching power supply (SMPS)**: This MOSFET performs well in switching power supplies, especially in high-voltage switching applications. Its super junction technology can significantly reduce conduction losses and improve conversion efficiency. It is suitable for consumer electronics, industrial equipment and communication power supplies.
3. **Electric vehicle charging system**: The high voltage characteristics of MDI6N60BTH-VB make it very suitable for use in electric vehicle charging equipment, especially in high-voltage fast charging circuits. It can provide stable switching performance and ensure charging efficiency and safety.
4. **Industrial Control and Automation**: In industrial automation equipment, the MDI6N60BTH-VB can be used in high-voltage control modules such as motor drives, motor controls, and industrial power systems to provide precise voltage and current control.
5. **Lighting Driver Circuit**: This MOSFET can also be used in high-efficiency LED lighting drivers, especially in outdoor or industrial lighting applications that require high-voltage input, to help achieve higher power efficiency and reliability.
6. **UPS (Uninterruptible Power Supply) Systems**: In UPS systems, the MDI6N60BTH-VB can handle high-voltage power switching and inversion functions, ensuring fast response and stable backup power in the event of a power failure.
In general, as a high-voltage, low-loss MOSFET, the MDI6N60BTH-VB is suitable for use in a variety of high-efficiency, high-voltage control and conversion systems, especially in power management, inverters, and industrial automation applications.
1. **Power converters and inverters**: MDI6N60BTH-VB is very suitable for high-voltage power converters and inverters. Its high voltage resistance and low conduction loss make it excellent in AC-DC and DC-DC conversion, especially suitable for photovoltaic inverters and wind energy conversion systems.
2. **Switching power supply (SMPS)**: This MOSFET performs well in switching power supplies, especially in high-voltage switching applications. Its super junction technology can significantly reduce conduction losses and improve conversion efficiency. It is suitable for consumer electronics, industrial equipment and communication power supplies.
3. **Electric vehicle charging system**: The high voltage characteristics of MDI6N60BTH-VB make it very suitable for use in electric vehicle charging equipment, especially in high-voltage fast charging circuits. It can provide stable switching performance and ensure charging efficiency and safety.
4. **Industrial Control and Automation**: In industrial automation equipment, the MDI6N60BTH-VB can be used in high-voltage control modules such as motor drives, motor controls, and industrial power systems to provide precise voltage and current control.
5. **Lighting Driver Circuit**: This MOSFET can also be used in high-efficiency LED lighting drivers, especially in outdoor or industrial lighting applications that require high-voltage input, to help achieve higher power efficiency and reliability.
6. **UPS (Uninterruptible Power Supply) Systems**: In UPS systems, the MDI6N60BTH-VB can handle high-voltage power switching and inversion functions, ensuring fast response and stable backup power in the event of a power failure.
In general, as a high-voltage, low-loss MOSFET, the MDI6N60BTH-VB is suitable for use in a variety of high-efficiency, high-voltage control and conversion systems, especially in power management, inverters, and industrial automation applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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