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MDFS11N65-VB Product details
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MDFS11N65-VB MOSFET Product Introduction
MDFS11N65-VB is a high-voltage single N-channel MOSFET in a TO220F package. It is designed for high-voltage and high-current applications and is suitable for power equipment that requires efficient switching and robust control. The MOSFET has a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 320mΩ@VGS=10V, and a maximum drain current (ID) of up to 20A. Based on planar technology, it has excellent durability and reliability and is suitable for applications such as industry, power conversion, and high-voltage switching circuits.
MDFS11N65-VB is a high-voltage single N-channel MOSFET in a TO220F package. It is designed for high-voltage and high-current applications and is suitable for power equipment that requires efficient switching and robust control. The MOSFET has a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 320mΩ@VGS=10V, and a maximum drain current (ID) of up to 20A. Based on planar technology, it has excellent durability and reliability and is suitable for applications such as industry, power conversion, and high-voltage switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
MDFS11N65-VB Detailed parameter description
- **Device type**: Single N-channel MOSFET
- **Package**: TO220F
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 320mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Planar
- **Maximum power dissipation (Pd)**: High heat dissipation efficiency, suitable for high power applications
- **Reverse recovery time (trr)**: Fast switching capability, reduced switching loss
- **Gate charge (Qg)**: Lower gate charge, reduced switching loss
- **Operating temperature range**: -55°C ~ 150°C
- **Thermal resistance (Rth)**: Excellent thermal management performance to ensure equipment stability
- **Application environment**: Excellent anti-electromagnetic interference capability to adapt to complex industrial application environments
- **Device type**: Single N-channel MOSFET
- **Package**: TO220F
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 320mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Planar
- **Maximum power dissipation (Pd)**: High heat dissipation efficiency, suitable for high power applications
- **Reverse recovery time (trr)**: Fast switching capability, reduced switching loss
- **Gate charge (Qg)**: Lower gate charge, reduced switching loss
- **Operating temperature range**: -55°C ~ 150°C
- **Thermal resistance (Rth)**: Excellent thermal management performance to ensure equipment stability
- **Application environment**: Excellent anti-electromagnetic interference capability to adapt to complex industrial application environments
Domain and module applications：
MDFS11N65-VB Applicable fields and modules
1. **Industrial power supply equipment**: MDFS11N65-VB is suitable for various industrial power supply equipment, such as **high-voltage switching power supply (SMPS)**, due to its high withstand voltage of 650V and high current handling capacity of 20A, providing efficient and reliable power conversion in high voltage conversion and power management systems.
2. **Motor drive and control**: This MOSFET is suitable for **motor drive circuits**, especially for switching control of AC motors or DC brushless motors. Due to its high withstand voltage characteristics, it can withstand instantaneous high voltages in motor drive systems and provide stable current control.
3. **Photovoltaic inverter**: MDFS11N65-VB can also be used in inverter modules in **photovoltaic power generation systems**. In these applications, MOSFET is responsible for converting DC to AC and is able to handle high voltage and high current requirements.
4. **Power conversion equipment**: Suitable for **power converters**, such as DC-DC converters (DC-DC Converter) or AC-DC converters (AC-DC Converter), for efficient power transmission and distribution, especially in power grids and industrial power distribution systems.
5. **Uninterruptible power supply (UPS)**: Due to its high current and high voltage resistance performance, MDFS11N65-VB is very suitable for **uninterruptible power supply systems**. It can ensure that the equipment continues to work stably when the power is interrupted, improving the reliability of the entire system.
6. **Home appliances and lighting equipment**: In high-power home appliances and smart lighting systems, this MOSFET can be used as an efficient power switch to help optimize energy consumption, extend equipment life, and reduce power consumption.
Through these applications, MDFS11N65-VB demonstrates its wide applicability in the field of high voltage and high current, especially for efficient and robust power control and power conversion modules, it can significantly improve the efficiency and reliability of the overall system.
1. **Industrial power supply equipment**: MDFS11N65-VB is suitable for various industrial power supply equipment, such as **high-voltage switching power supply (SMPS)**, due to its high withstand voltage of 650V and high current handling capacity of 20A, providing efficient and reliable power conversion in high voltage conversion and power management systems.
2. **Motor drive and control**: This MOSFET is suitable for **motor drive circuits**, especially for switching control of AC motors or DC brushless motors. Due to its high withstand voltage characteristics, it can withstand instantaneous high voltages in motor drive systems and provide stable current control.
3. **Photovoltaic inverter**: MDFS11N65-VB can also be used in inverter modules in **photovoltaic power generation systems**. In these applications, MOSFET is responsible for converting DC to AC and is able to handle high voltage and high current requirements.
4. **Power conversion equipment**: Suitable for **power converters**, such as DC-DC converters (DC-DC Converter) or AC-DC converters (AC-DC Converter), for efficient power transmission and distribution, especially in power grids and industrial power distribution systems.
5. **Uninterruptible power supply (UPS)**: Due to its high current and high voltage resistance performance, MDFS11N65-VB is very suitable for **uninterruptible power supply systems**. It can ensure that the equipment continues to work stably when the power is interrupted, improving the reliability of the entire system.
6. **Home appliances and lighting equipment**: In high-power home appliances and smart lighting systems, this MOSFET can be used as an efficient power switch to help optimize energy consumption, extend equipment life, and reduce power consumption.
Through these applications, MDFS11N65-VB demonstrates its wide applicability in the field of high voltage and high current, especially for efficient and robust power control and power conversion modules, it can significantly improve the efficiency and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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