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MDF7N65BTH -VB Product details
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MDF7N65BTH-VB MOSFET Product Introduction
MDF7N65BTH-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage and medium power applications. Its maximum drain-source voltage (VDS) reaches 650V, enabling it to operate stably in high voltage power supplies and power conversion circuits. The gate-source voltage (VGS) can reach ±30V, providing flexibility for a variety of drive voltages. The product has a threshold voltage (Vth) of 3.5V, suitable for conduction at relatively low gate drive voltages. The on-resistance (RDS(ON)) is 1100mΩ@VGS=10V, giving it good efficiency in switching operations. The maximum drain current (ID) is 7A, suitable for a variety of power applications. MDF7N65BTH-VB uses planar technology to ensure good electrical performance and thermal management capabilities under high voltage and high current conditions.
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MDF7N65BTH-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage and medium power applications. Its maximum drain-source voltage (VDS) reaches 650V, enabling it to operate stably in high voltage power supplies and power conversion circuits. The gate-source voltage (VGS) can reach ±30V, providing flexibility for a variety of drive voltages. The product has a threshold voltage (Vth) of 3.5V, suitable for conduction at relatively low gate drive voltages. The on-resistance (RDS(ON)) is 1100mΩ@VGS=10V, giving it good efficiency in switching operations. The maximum drain current (ID) is 7A, suitable for a variety of power applications. MDF7N65BTH-VB uses planar technology to ensure good electrical performance and thermal management capabilities under high voltage and high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- Provides good heat dissipation performance and is suitable for high-power applications.
- **Configuration**: Single N-channel
- Supports single conductive channel design, which is convenient for circuit control and design.
- **VDS (drain-source voltage)**: 650V
- High voltage capability, suitable for high-voltage power supply and power management applications.
- **VGS (gate-source voltage)**: ±30V
- Provides flexible drive voltage selection and supports a variety of circuit configurations.
- **Vth (threshold voltage)**: 3.5V
- Reliable turn-on at a lower gate drive voltage to ensure stable switching operation.
- **RDS(ON) @ VGS=10V**: 1100mΩ
- Provides lower on-resistance at high voltage, suitable for high-efficiency circuits.
- **ID (maximum drain current)**: 7A
- Supports medium power applications and can handle a variety of load requirements.
- **Technology**: Plannar
- Provides stable performance and good heat dissipation, suitable for high voltage environments.
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- **Package type**: TO220F
- Provides good heat dissipation performance and is suitable for high-power applications.
- **Configuration**: Single N-channel
- Supports single conductive channel design, which is convenient for circuit control and design.
- **VDS (drain-source voltage)**: 650V
- High voltage capability, suitable for high-voltage power supply and power management applications.
- **VGS (gate-source voltage)**: ±30V
- Provides flexible drive voltage selection and supports a variety of circuit configurations.
- **Vth (threshold voltage)**: 3.5V
- Reliable turn-on at a lower gate drive voltage to ensure stable switching operation.
- **RDS(ON) @ VGS=10V**: 1100mΩ
- Provides lower on-resistance at high voltage, suitable for high-efficiency circuits.
- **ID (maximum drain current)**: 7A
- Supports medium power applications and can handle a variety of load requirements.
- **Technology**: Plannar
- Provides stable performance and good heat dissipation, suitable for high voltage environments.
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Domain and module applications：
Applications and modules
1. **High-voltage power converter**: MDF7N65BTH-VB is very suitable for high-voltage power converters such as AC-DC converters and DC-DC converters. It can efficiently convert electrical energy at high voltages to ensure the safety and stability of the power system.
2. **Switching power supply (SMPS)**: In switching power supply modules, MDF7N65BTH-VB can be used as the main switching element to help improve conversion efficiency and reduce energy loss. It is suitable for power management of various consumer electronics and industrial equipment.
3. **Inverter**: In inverters for renewable energy systems such as solar and wind power, MDF7N65BTH-VB can be used to convert DC to AC. Its high voltage characteristics ensure stable operation in complex electrical environments.
4. **Electric vehicles and battery management systems (BMS)**: In electric vehicles and their charging equipment, this MOSFET can effectively control the charging and discharging process of high-voltage battery packs to ensure the safety and efficiency of the batteries.
5. **Motor drive control**: Suitable for motor drive applications, the MDF7N65BTH-VB can provide reliable switching control, improve motor efficiency and reduce heat loss.
6. **Power electronics**: In high-power electronic devices, the MDF7N65BTH-VB can bear high voltage loads and provide strong switching capabilities to ensure stable operation of the equipment under high power.
In summary, the MDF7N65BTH-VB is a high-voltage, high-efficiency MOSFET suitable for use in a variety of high-voltage applications, including power conversion, motor control, and battery management. Its high voltage carrying capability and moderate current handling capabilities make it excel in these applications.
1. **High-voltage power converter**: MDF7N65BTH-VB is very suitable for high-voltage power converters such as AC-DC converters and DC-DC converters. It can efficiently convert electrical energy at high voltages to ensure the safety and stability of the power system.
2. **Switching power supply (SMPS)**: In switching power supply modules, MDF7N65BTH-VB can be used as the main switching element to help improve conversion efficiency and reduce energy loss. It is suitable for power management of various consumer electronics and industrial equipment.
3. **Inverter**: In inverters for renewable energy systems such as solar and wind power, MDF7N65BTH-VB can be used to convert DC to AC. Its high voltage characteristics ensure stable operation in complex electrical environments.
4. **Electric vehicles and battery management systems (BMS)**: In electric vehicles and their charging equipment, this MOSFET can effectively control the charging and discharging process of high-voltage battery packs to ensure the safety and efficiency of the batteries.
5. **Motor drive control**: Suitable for motor drive applications, the MDF7N65BTH-VB can provide reliable switching control, improve motor efficiency and reduce heat loss.
6. **Power electronics**: In high-power electronic devices, the MDF7N65BTH-VB can bear high voltage loads and provide strong switching capabilities to ensure stable operation of the equipment under high power.
In summary, the MDF7N65BTH-VB is a high-voltage, high-efficiency MOSFET suitable for use in a variety of high-voltage applications, including power conversion, motor control, and battery management. Its high voltage carrying capability and moderate current handling capabilities make it excel in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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