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MDF4N60TH-VB Product details
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MDF4N60TH-VB MOSFET Product Introduction
MDF4N60TH-VB is a high-voltage single N-channel MOSFET in TO220F package, designed for high voltage and medium power applications. It has a drain-source voltage (VDS) of 650V, suitable for circuits requiring high voltage control. Its gate-source voltage (VGS) range is ±30V, which is flexible to cope with a variety of drive voltages. The threshold voltage (Vth) is 3.5V, ensuring stable operation under appropriate gate drive voltage. The on-resistance (RDS(ON)) is 2560mΩ@VGS=10V, which is suitable for medium power switching power supplies and high voltage circuits. Its maximum drain current (ID) is 4A, and it uses planar process (Plannar) technology with reliable electrical performance.
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MDF4N60TH-VB is a high-voltage single N-channel MOSFET in TO220F package, designed for high voltage and medium power applications. It has a drain-source voltage (VDS) of 650V, suitable for circuits requiring high voltage control. Its gate-source voltage (VGS) range is ±30V, which is flexible to cope with a variety of drive voltages. The threshold voltage (Vth) is 3.5V, ensuring stable operation under appropriate gate drive voltage. The on-resistance (RDS(ON)) is 2560mΩ@VGS=10V, which is suitable for medium power switching power supplies and high voltage circuits. Its maximum drain current (ID) is 4A, and it uses planar process (Plannar) technology with reliable electrical performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- This package has good heat dissipation performance and is suitable for high voltage applications.
- **Configuration**: Single N-channel
- Provides a single conductive channel for easy control of high voltage switch operations.
- **VDS (drain-source voltage)**: 650V
- High voltage capability, suitable for high voltage power conversion and industrial power applications.
- **VGS (gate-source voltage)**: ±30V
- Provides a flexible driving voltage range to enhance the flexibility of circuit design.
- **Vth (threshold voltage)**: 3.5V
- Ensures proper conduction state and improves the stability of the switching circuit.
- **RDS(ON) @ VGS=10V**: 2560mΩ
- Has a high on-resistance at medium current, suitable for high-voltage circuits with low control current.
- **ID (maximum drain current)**: 4A
- Suitable for medium-power load requirements and ensures safe operation of high-voltage circuits.
- **Technology**: Plannar
- Provides reliable switching performance and reduces power loss.
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- **Package type**: TO220F
- This package has good heat dissipation performance and is suitable for high voltage applications.
- **Configuration**: Single N-channel
- Provides a single conductive channel for easy control of high voltage switch operations.
- **VDS (drain-source voltage)**: 650V
- High voltage capability, suitable for high voltage power conversion and industrial power applications.
- **VGS (gate-source voltage)**: ±30V
- Provides a flexible driving voltage range to enhance the flexibility of circuit design.
- **Vth (threshold voltage)**: 3.5V
- Ensures proper conduction state and improves the stability of the switching circuit.
- **RDS(ON) @ VGS=10V**: 2560mΩ
- Has a high on-resistance at medium current, suitable for high-voltage circuits with low control current.
- **ID (maximum drain current)**: 4A
- Suitable for medium-power load requirements and ensures safe operation of high-voltage circuits.
- **Technology**: Plannar
- Provides reliable switching performance and reduces power loss.
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Domain and module applications：
Applications and modules
1. **High-voltage LED drive circuit**: MDF4N60TH-VB is very suitable for drive circuits in high-voltage LED lighting systems. Its high voltage capability and medium current carrying capacity enable it to effectively control current in high-voltage LED power supply design to ensure lighting stability and reliability.
2. **Industrial power module**: This MOSFET can be used in industrial power modules, suitable for high-voltage DC-DC converters (DC-DC) and switching power supplies (SMPS), helping to optimize system energy efficiency and reduce heat loss.
3. **Battery management system (BMS)**: In the battery management system of power tools and electric vehicles, MDF4N60TH-VB can handle the power management of high-voltage battery packs to ensure safe charging and discharging of batteries.
4. **Inverter circuit**: Applicable to inverter modules in renewable energy systems such as solar power generation and wind power generation, it can achieve reliable power conversion at high voltage and improve energy utilization efficiency.
5. **Industrial control systems**: In industrial control applications, such as high-voltage motor control and power control equipment, the MDF4N60TH-VB can be used as a key high-voltage switching element to ensure the safe operation of the circuit in a high-voltage environment.
6. **Inductive heating equipment**: Suitable for use in inductive heating equipment, high-voltage MOSFET can effectively improve the heating efficiency and ensure stable operation of the equipment.
In summary, the MDF4N60TH-VB is a MOSFET designed for high-voltage applications, suitable for use in high-voltage power supplies, battery management, lighting control, and industrial equipment. Its high voltage support and medium current handling capabilities make it perform well in these applications.
1. **High-voltage LED drive circuit**: MDF4N60TH-VB is very suitable for drive circuits in high-voltage LED lighting systems. Its high voltage capability and medium current carrying capacity enable it to effectively control current in high-voltage LED power supply design to ensure lighting stability and reliability.
2. **Industrial power module**: This MOSFET can be used in industrial power modules, suitable for high-voltage DC-DC converters (DC-DC) and switching power supplies (SMPS), helping to optimize system energy efficiency and reduce heat loss.
3. **Battery management system (BMS)**: In the battery management system of power tools and electric vehicles, MDF4N60TH-VB can handle the power management of high-voltage battery packs to ensure safe charging and discharging of batteries.
4. **Inverter circuit**: Applicable to inverter modules in renewable energy systems such as solar power generation and wind power generation, it can achieve reliable power conversion at high voltage and improve energy utilization efficiency.
5. **Industrial control systems**: In industrial control applications, such as high-voltage motor control and power control equipment, the MDF4N60TH-VB can be used as a key high-voltage switching element to ensure the safe operation of the circuit in a high-voltage environment.
6. **Inductive heating equipment**: Suitable for use in inductive heating equipment, high-voltage MOSFET can effectively improve the heating efficiency and ensure stable operation of the equipment.
In summary, the MDF4N60TH-VB is a MOSFET designed for high-voltage applications, suitable for use in high-voltage power supplies, battery management, lighting control, and industrial equipment. Its high voltage support and medium current handling capabilities make it perform well in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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